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  tdc.10.. vishay semiconductors 1 (6) rev. a2, 12-jul-02 www.vishay.com document number 83179 clock display color type circuitry green tdcg1050 common anode tdcg1060 common cathode super red tdcr1050 common anode tdcr1060 common cathode super yellow tdcy1050 common anode y tdcy1060 common cathode description four digit display, with 10mm digit charactersize. designed as clock display with active colon between digit two and three. features  high efficient alingap technology  dark surface, white segments  common anode (tdc.1050)  common cathode (tdc.1060)  recommended viewing distance up to 7 meter 16294 applications clock display for video / audioequipment, instrumentation, set top boxes absolute maximum ratings t amb = 25 c, unless otherwise specified tdcg1050 / tdcg1060, tdcr1050 / tdcr1060, tdcy1050 / tdcy1060, parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 25 ma operating temperature range t amb 40 to + 85 c storage temperature range t stg 40 to + 100 c soldering temperature t sd 260 5 c electrostatic discharge esd 2000 v power dissipation p v 60 mw peak forward current (duty 1/10 @ 1khz) i f (peak) 160 ma
tdc.10.. vishay semiconductors 2 (6) rev. a2, 12-jul-02 www.vishay.com document number 83179 optical and electrical characteristics t amb = 25 c, unless otherwise specified green ( tdcg1050, tdcg1060 ) parameter test conditions type symbol min typ max unit luminous intensity p er segment 1) i f = 2 ma tdcg1050/1060 i v 1.0 mcd luminous intensity per segment 1) i f = 10 ma tdcg1050/1060 i v 2.8 4.0 mcd luminous intensity of colon i f = 2 ma tdcg1050/1060 i v 0.2 mcd luminous intensity o f colon i f = 10 ma tdcg1050/1060 i v 0.5 1.2 mcd dominant wavelength i f = 20 ma  d 573 nm peak wavelength i f = 20 ma  p 575 nm spectrum radiation bandwidth i f = 20 ma  20 nm forward voltage i f = 20 ma v f 2.0 2.4 v reverse current v r = 5v i r 10  a super red ( tdcr1050, tdcr1060 ) parameter test conditions type symbol min typ max unit luminous intensity p er segment 1) i f = 2 ma tdcr1050/1060 i v 1.5 mcd luminous intensity per segment 1) i f = 10 ma tdcr1050/1060 i v 4.0 6.0 mcd luminous intensity of colon i f = 2 ma tdcr1050/1060 i v 0.4 mcd luminous intensity o f colon i f = 10 ma tdcr1050/1060 i v 0.5 0.8 mcd dominant wavelength i f = 20 ma  d 631 nm peak wavelength i f = 20 ma  p 639 nm spectrum radiation bandwidth i f = 20 ma  20 nm forward voltage i f = 20 ma v f 2.0 2.4 v reverse current v r = 5v i r 10  a super yellow ( tdcy1050, tdcy1060 ) parameter test conditions type symbol min typ max unit luminous intensity p er segment 1) i f = 2 ma tdcy1050/1060 i v 1.5 mcd luminous intensity per segment 1) i f = 10 ma tdcy1050/1060 i v 4.0 6.0 mcd luminous intensity of colon i f = 2 ma tdcy1050/1060 i v 0.4 mcd luminous intensity o f colon i f = 10 ma tdcy1050/1060 i v 0.5 0.8 mcd dominant wavelength i f = 20 ma  d 589 nm peak wavelength i f = 20 ma  p 591 nm spectrum radiation bandwidth i f = 20 ma  15 nm forward voltage i f = 20 ma v f 2.0 2.4 v reverse current v r = 5v i r 10  a note 1) i vmin and i v groups are mean values of all segments ( a to g, d1 to d4 ), matching factor within segments is  0.5 , excluding decimal points and colon.
tdc.10.. vishay semiconductors 3 (6) rev. a2, 12-jul-02 www.vishay.com document number 83179 typical characteristics (t amb = 25  c, unless otherwise specified) 0 10 20 30 40 50 0 20406080100 t amb ambient temperature ( c ) 16297 i forward current ( ma ) f figure 1. forward current vs. ambient temperature 0 10 20 30 40 50 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 v f forward voltage ( v ) 16296 f i forward current ( ma ) figure 2. forward current vs. forward voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 520 530 540 550 560 570 580 590 600 610 620  wavelength ( nm ) 16433 i relative luminous intensity vrel figure 3. relative luminous intensity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 550 560 570 580 590 600 610 620 630 640 650  wavelength ( nm ) 95 10881 i relative luminous intensity vrel i f = 10 ma figure 4. relative luminous intensity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 600 610 620 630 640 650 660 670 680 690 700  wavelength ( nm ) 96 12075 i relative luminous intensity vrel i f = 10 ma figure 5. relative luminous intensity vs. wavelength
tdc.10.. vishay semiconductors 4 (6) rev. a2, 12-jul-02 www.vishay.com document number 83179 dimensions in mm 16293
tdc.10.. vishay semiconductors 5 (6) rev. a2, 12-jul-02 www.vishay.com document number 83179 16714
tdc.10.. vishay semiconductors 6 (6) rev. a2, 12-jul-02 www.vishay.com document number 83179 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423


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