Part Number Hot Search : 
PM0222 10700474 12XXX C641N 78MR06 2PD601A 31300 RD33FM
Product Description
Full Text Search
 

To Download 2N6036 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  savantic semiconductor product specification silicon pnp power transistors 2n6034 2n6035 2N6036 description with to-126 package complement to type 2n6037/6038/6039 darlington high dc current gain applications designed for general-purpose amplifier and low-speed switching applications pinning(see fig.2) pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n6034 -40 2n6035 -60 v cbo collector-base voltage 2N6036 open emitter -80 v 2n6034 -40 2n6035 -60 v ceo collector-emitter voltage 2N6036 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -8 a i b base current -0.1 a p d total power dissipation t c =25 40 w t j junction temperature 150  t stg storage temperature -65~150  thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 3.12 /w
savantic semiconductor product specification 2 silicon pnp power transistors 2n6034 2n6035 2N6036 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6034 -40 2n6035 -60 v ceo(sus) collector-emitter sustaining voltage 2N6036 i c =-0.1a ;i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-2a; i b =-8ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-4a; i b =-40ma -3.0 v v besat base-emitter saturation voltage i c =-4a; i b =-40ma -4.0 v v be base-emitter on voltage i c =-2a ; v ce =-3v -2.8 v i ceo collector cut-off current v ce =rated v ceo ; i b =0 -0.1 ma i cex collector cut-off current v ce =rated v ceo ; v be(off) =1.5v t c =125 -0.1 -0.5 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-0.5a ; v ce =-3v 500 h fe-2 dc current gain i c =-2a ; v ce =-3v 750 15000 h fe-3 dc current gain i c =-4a ; v ce =-3v 100 c ob output capacitance i e =0;v cb =-10v;f=0.1mhz 200 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2n6034 2n6035 2N6036 package outline fig.2 outline dimensions


▲Up To Search▲   

 
Price & Availability of 2N6036

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X