View STL42N65M5_2086761.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. april 2010 doc id 17443 rev 1 1/11 11 STL42N65M5 n-channel 650 v, 0.070 ? , 34 a mdmesh? v power mosfet in powerflat? (8x8) hv features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description mdmesh v is a revolutionary power mosfet technology, which comb ines an innovative proprietary vertical process with the well known company?s powermesh? horizontal layout. the resulting product has an extremely low on- resistance, unmatched among silicon-based power mosfets, making it especially suited for applications which require superior power density and outstanding efficiencies. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STL42N65M5 710 v < 0.079 ? 34 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x (6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL42N65M5 42n65m5 powerflat? (8x8) hv tape and reel www.st.com
contents STL42N65M5 2/11 doc id 17443 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
STL42N65M5 electrical ratings doc id 17443 rev 1 3/11 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 650 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case. drain current (continuous) at t c = 25 c 34 a i d (1) drain current (continuous) at t c = 100 c 22 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 136 a i d (3) 3. when mounted on fr-4 board of inch2, 2oz cu. drain current (continuous) at t c = 25 c 4 a i d (3) drain current (continuous) at t c = 100 c 2.5 a i dm (2),(3) drain current (pulsed) 16 a p tot (3) total dissipation at t c = 25 c (steady state) 3 w p tot (1) total dissipation at t c = 25 c (steady state) 208 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 11 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 950 mj dv/dt (4) 4. i sd 34 a, di/dt 400 a/s, v peak < v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.6 c/w r thj-amb (1) 1. when mounted on fr-4 board of inch2, 2oz cu. thermal resistance junction-ambient max 45 c/w
electrical characteristics STL42N65M5 4/11 doc id 17443 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 16.5 a 0.070 0.079 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 4650 110 5.7 - pf pf pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 80% v (br)dss -400-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related v gs = 0, v ds = 0 to 80% v (br)dss -285-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.4 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 16.5 a, v gs = 10 v (see figure 3 ) - 100 26 38 - nc nc nc
STL42N65M5 electrical characteristics doc id 17443 rev 1 5/11 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(off) t r t c t f turn-off delay time rise time cross time fall time v dd = 400 v, i d = 20 a, r g = 4.7 ?, v gs = 10 v (see figure 7 ) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 34 136 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 33 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 33 a, di/dt = 100 a/s v dd = 100 v (see figure 4 ) - 400 7 35 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 33 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 4 ) - 532 10 38 ns c a
test circuits STL42N65M5 6/11 doc id 17443 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
STL42N65M5 package mechanical data doc id 17443 rev 1 7/11 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL42N65M5 8/11 doc id 17443 rev 1 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.02 0.05 b 0.95 1.00 1.05 c0.10 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 figure 8. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e e b a e2 d2 l 0.40 a1 am05542v1
STL42N65M5 package mechanical data doc id 17443 rev 1 9/11 figure 9. powerflat? 8x8 hv recommended footprint 7. 3 0 4.40 2.00 0.60 1.05 am0554 3 v1
revision history STL42N65M5 10/11 doc id 17443 rev 1 5 revision history table 9. document revision history date revision changes 28-apr-2010 1 first release
STL42N65M5 doc id 17443 rev 1 11/11 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STL42N65M5

	To Download STL42N65M5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .