triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 10gb/s differential tia TGA4815-EPU key features and performance ? 6500 w single-ended transimpedance ? >10ghz 3db bandwidth ?1.7ma pp maximum input current ? 9pa/ ? hz input noise current ? adjustable output offset ? rx signal indicator (rssi) ? 0.15m 3mi phemt technology ? bias conditions: 3.3v, 80ma ? chip dimensions: 1.78 x 0.96 x 0.1 mm (0.070 x 0.038 x 0.004 inches) preliminary measured performance bias conditions: vpos=3.3v, ipos=80ma primary applications ? oc-192/stm-64 fiber optic systems 10.7gb/s, 2 31 -1 prbs, optical pin = -14 dbm 48 54 60 66 72 78 84 13579111315 frequency (ghz) transimpedance (db-ohm) -18 -15 -12 -9 -6 -3 0 output return loss (db) differential tz non-inverting output inverting output cpd = 0.2 pf rpd = 15 ohm
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4815-EPU table i maximum ratings symbol parameter 1/ value notes vpos positive supply voltage 5.5 v 2/ ipos positive supply current (quiescent) 90 ma 2/ p in input continuous wave power 14.5 dbm 2/ p d power dissipation tbd 2/ t ch operating channel temperature 150 0 c3/ 4 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ these ratings apply to each individual fet. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table ii rf characterization table (t a = 25 q c, nominal) (vpos = 3.3v, ipos = 80ma r 5%) 1/ parameter notes typical unit single-ended transimpedance (1ghz) 6500 w 3db transimpedance bandwidth 2/ 3 / 10 ghz low frequency 3db cut-off 4/ 30 khz transimpedance ripple (1 to 8ghz) 2/ 3 / 0.3 dbpp group delay variation (0.1 to 8ghz) 2/ 3 / 15 ps ave eq. noise current (0.1 to 8ghz) 2/ 3 / 9 pa/ ? hz output return loss (0.1 to f3db) 2/ 3 / 12 db input overload current 1.7 mapp input sensitivity (ber = 10 -12 ) -20 dbm single-ended limited output voltage 600 mvpp note: table ii lists the rf characteristics of typical devices as determined by fixtured measurements. 1/ 50 w single-ended output impedance 2/ photodiode model: cpd = 0.2pf, rpd = 15 w 3/ rf interconnect inductance: 0.42nh 4/ external bypass capacitors required (see assembly drawing) TGA4815-EPU table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) v + = 3.3 v i + = 80 ma pdiss = 0.264 w 80 36.9 5.7 e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature.
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical fixtured performance TGA4815-EPU 0.65 0.70 0.75 0.80 0.85 0.90 0.95 0.0 0.2 0.4 0.6 0.8 1.0 rms photocurrent (ma) rssi voltage (v) 56 59 62 65 68 71 74 77 80 13579111315 frequency (ghz) single-ended transimpedance (db-ohm) -25 deg c + 0 deg c +25 deg c +50 deg c +75 deg c cpd = 0.2 pf rpd = 15 ohm
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing TGA4815-EPU
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4815-EPU
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information november 16, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 c. assembly process notes TGA4815-EPU
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