chip silicon rectifier hfm201-l thru hfm207-l ultra fast recovery type features plastic package has underwriters laborat ory flammability classificatio n 94v -o u tiliz ing flame retardant epox y m olding compound. for surface mounted applicat ions. ex ceeds environmental standards of m il-s- 19500 / 228 low leakage current . mechanical dat a case : mol ded plastic, jede c d o-214ac termi nals : solder plated, s olderable per mil-st d-750, method 2026 pol arity : indicated by cathode band mounting p osition : any weight : 0.0015 ounce, 0.05 gr am (v) (v) (v) (v) (ns) ( o c) hfm201-l h21 50 35 50 hfm202-l h22 100 70 100 hfm203-l h23 200 140 200 hfm204-l h24 400 280 400 1.3 hfm205-l h25 600 420 600 HFM206-L h26 800 560 800 hfm207-l h27 1000 700 1000 -55 to +150 operating temperature v rrm *1 v rms *2 v r *3 v f *4 t rr *5 1.0 symbols marking code 50 1.7 75 maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward rectified current ambient temperature = 50 o c i o 1.0 a forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i fsm 50 a v r = v rrm t a = 25 o c 5.0 ua v r = v rrm t a = 100 o c 150 ua thermal resistance junction to ambient r q ja 20 o c / w diode junction capacitance f=1mhz and applied 4vdc reverse voltage c j 25 pf storage temperature t stg -55 +150 o c reverse current i r *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage *5 reverse recovery time f o r m o s a m s 0.205(5.2) 0.189(4.8) 0.012(0.3) typ. 0.110(2.8) 0.094(2.4) 0.181(4.6) 0.165(4.2) 0.075(1.9) 0.067(1.7) 0.040 (1.0) typ. 0.040(1.0) typ. dimensions in inches and (millimeters) sma-l
.4 .6 .8 1.0 1.2 1.4 .001 .01 .1 1.0 10 rating and characteristic curves (hfm201-l thru hfm207-l) fig.1-typical forward characteristics fig.5-typical junction capacit ance i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward volt age,(v) pulse width 300us 1% duty cycle (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non-inductive w notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | || | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive w w tj=25 c fig.2-typical forward current a v e r a g e f o r w a r d c u r r e n t , ( a ) 0.4 0.8 1.2 1.6 2.0 2.4 single phase half wave 60hz resistive or inductive load p.c.b. mounted on 0.3" * 0.3" (8.0mm * 8.0mm) copper pad areas derating curve ambient temperature ( c) 1.6 1.8 h fm 20 5- l~ h fm 20 7- l h f m 2 0 4 -l h f m 2 0 1 -l ~ h f m 2 0 3 -l reverse voltage,(v) j u n c t i o n c a p a c i t a n c e , ( p f ) 175 120 100 80 60 40 20 0 .01 .05 .1 .5 1 5 10 50 100 0 25 50 75 100 125 150 175 0 fig.4-maximum non-repetitive forward surge current 10 0 20 30 40 50 number of cycles at 60hz 1 10 5 50 100 tj=25 c 8.3ms single half sine wave jedec method p e a k f o r w a r d s u r g e c u r r e n t , ( a )
|
