savantic semiconductor product specification silicon npn power transistors 2SD1159 d escription with to-220 package applications tv horizontal deflection output, high-current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 4.5 a i cm collector current-peak 10 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1159 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = : 60 v v (br)cbo collector-base breakdown voltage i c =5ma ;i e =0 200 v v (br)ebo emitter-base breakdown voltage i e =5ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =4a, i b =0.4a 0.5 1.0 v v besat base-emitter saturation voltage i c =4a, i b =0.4a 1.5 v i cbo collector cut-off current v cb =40v;i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 30 160 h fe-2 dc current gain i c =4a ; v ce =5v 25 f t transition frequency i c =1a ; v ce =5v 10 mhz switching times t f fall time i c =5a;i b1 =-i b2 =0.5a; v cc =50v 0.2 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1159 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD1159
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