features applications photodiode si apd short wavelength type apd s8664 series l high sensitivity at visible range l low noise l high gain l low capacitance l low-light-level measurement l analytical equipment 1 general ratings / absolute maximum ratings absolute maximum ratings effective * 2 active area size effective active area type no. dimensional outline /window material * 1 package (mm) (mm 2 ) operating temperature topr (c) storage temperature ts t g (c) s8664-02k 0.2 0.03 s8664-05k 0.5 0.19 s8664-10k 1.0 0.78 s8664-20k ? /k to-5 2.0 3.14 s8664-30k 3.0 7.0 s8664-50k ? /k to-8 5.0 19.6 -55 to +100 S8664-55 ? /e 5 5 25 s8664-1010 ? /e ceramic 10 10 100 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) spectral response range peak * 3 sensitivity wavelength p photo sensitivity s m=1 =420 nm quantum efficiency qe m=1 =420 nm breakdown voltage v br i d =100 a temperature coefficient of v br dark * 3 current i d cut-off frequency fc te r m i n al * 3 capacitance ct excess * 3 noise index =420 nm gain m =420 nm type no. (nm) (nm) (a/w) (%) typ. (v) max. (v) (v/c) typ. (na) max. (na) (mhz) (pf) s8664-02k 0.1 1 700 0.8 s8664-05k 0.2 1.5 680 1.6 s8664-10k 0.3 3 530 4 s8664-20k 0.6 6 280 11 s8664-30k 1 15 140 22 s8664-50k 3 35 60 55 S8664-55 5 50 40 80 s8664-1010 320 to 1000 600 0.24 70 400 500 0.78 10 100 11 270 0.2 50 *1: k: borosilicate glass e: epoxy resin *2: area in which a typical gain can be obtained. *3: values measured at a gain listed in the characteristics table.
si apd s8664 series 2 spectral response quantum efficiency vs. wavelength dark current vs. reverse voltage gain vs. reverse voltage kapdb0073eb kapdb0074eb kapdb0075eb kapdb0076eb 10 25 20 15 0 5 photo sensitivity (a/w) (typ. m=50) wavelength (nm) 200 400 600 800 1000 1200 s8664-02k/-05k/-10k/ -20k/-30k/-50k S8664-55/-1010 40 100 80 60 0 20 quantum efficiency (%) wavelength (nm) 200 400 600 800 1000 1200 (typ. ta=25 ?c) s8664-02k/-05k/-10k/ -20k/-30k/-50k S8664-55/-1010 1 na 1 a (typ. ta=25 ? c) 100 na 1 pa 10 pa 10 na 100 pa dark current reverse voltage (v) 100 200 300 400 500 s8664-50k s8664-30k s8664-10k s8664-02k s8664-1010 S8664-55 1000 (typ. =420 nm) 1 100 10 gain reverse voltage (v) 200 300 400 500 -20 ? c 0 ? c 20 ? c 40 ? c 60 ? c terminal capacitance vs. reverse voltage kapdb0077eb 10 nf (typ. ta=25 ? c, f=10 khz) 1 nf 100 ff 100 pf 10 pf 1 pf terminal capacitance reverse voltage (v) 0 100 200 300 400 500 s8664-30k S8664-55 s8664-10k s8664-02k s8664-50k s8664-1010
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2005 hamamatsu photonics k.k. cat. no. kapd1012e04 sept. 2005 dn si apd s8664 series kapda0026ea dimensional outlines (unit: mm) kapda0027ea s8664-02k/-05k/-10k/-20k s8664-30k/-50k 2.8 (20) 4.2 0.2 0.4 max. 5.9 0.1 5.08 0.2 s8664-02k 0.2 type no. a s8664-05k 0.5 s8664-10k 1.0 s8664-20k 2.0 y x 8.1 0.1 9.1 0.2 1.5 max. active area a photosensitive surface 0.45 lead case the glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. 3.1 (15) 4.9 index mark 1.4 photosensitive surface 0.5 max. 13.9 0.2 12.35 0.1 10.5 0.2 7.5 0.2 1.0 max. active area a 0.45 lead case s8664-30k 3.0 type no. a s8664-50k 5.0 the glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. S8664-55 5.0 1.5 5.08 (3.0) (5.5) 0.45 5.0 0.3 max. 2.0 1.2 1.65 5.0 9.0 10.6 active area 5 5 0.80 index mark general tolerance: 0.2 epoxy resin photosensitive surface kapda0022ea s8664-1010 5.08 (2 ) 2 0.5 * from center of active area to center of package 0.5 6.0 0.4 * 1.18 (0.2) 5 1.78 14.5 13.7 active area 10 10 (4 ) c0.5 photosensitive surface epoxy resin general tolerance: 0.2 0.46 0.70 kapda0036ea
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