elektronische bauelemente MMDT5451 0.2 w, 200 ma, 180 v plastic-encapsulated transistor (dual) 28-oct-2009 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. b l f h c j d g k a e rohs compliant product a suffix of -c specifies halogen & lead-free features dual transistor (npn+pnp) epitaxial planar die construction ideal for low power amplification and switching one 5551(npn), one 5401(pnp) marking : knm equivalent circuit absolute maximum ratings at ta = 25 c parameter symbol npn ratings pnp ratings unit collector-base voltage v cbo 180 -160 v collector-emitter voltage v ceo 160 -150 v emitter-base voltage v ebo 6 -5 v collector current -continuous i c 0.2 -0.2 a collector power dissipation p c 0.2 0.2 w thermal resistance. junction to ambient air r ja 625 c/w junction & storage temperature t j , t stg 150, -55~150 c sot-363 millimeter millimeter ref. min. max. ref. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 e1, b1, c1 = pnp 5401 e2, b2, c2 = npn 5551
elektronische bauelemente MMDT5451 0.2 w, 200 ma, 180 v plastic-encapsulated transistor (dual) 28-oct-2009 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. npn5551 electrical characteristics at ta = 25 c parameter symbol min. max. unit test conditions collector-base breakdown voltage v (br)cbo 180 - v i c =100 a,i e =0 collector-emitter breakdown voltage v (br)ceo 160 - v i c =1ma,i b =0 emitter-base breakdown voltage v (br)ebo 6 - v i e =10 a,i c =0 collector cut-off current i cbo - 0.05 a v cb =120v, i e =0 emitter cut-off current i ebo - 0.05 a v eb =4v, i c =0 h fe(1) 80 - v ce =5v,i c =1ma h fe(2) 80 250 v ce =5v,i c =10ma dc current gain h fe(3) 30 - v ce =5v,i c =50ma v ce(sat)1 - 0.15 v i c =10ma, i b =1ma collector-emitter saturation voltage v ce(sat)2 - 0.2 v i c =50ma, i b =5ma v be(sat)1 - 1 v i c =10ma, i b =1ma base-emitter saturation voltage v be(sat)2 - 1 v i c =50ma, i b =5ma transition frequency f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz output capacitance c ob - 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 noise figure nf - 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k ,f = 1.0khz pnp5401 electrical characteristics at ta = 25 c parameter symbol min. max. unit test conditions collector-base breakdown voltage v (br)cbo -160 - v i c =-100 a,i e =0 collector-emitter breakdown voltage v (br)ceo -150 - v i c =-1ma,i b =0 emitter-base breakdown voltage v (br)ebo -5 - v i e =-10 a,i c =0 collector cut-off current i cbo - -50 na v cb =-120v, i e =0 emitter cut-off current i ebo - -50 na v eb =-3v, i c =0 h fe(1) 50 - v ce =-5v,i c =-1ma h fe(2) 60 240 v ce =-5v,i c =-10ma dc current gain h fe(3) 50 - v ce =-5v,i c =-50ma v ce(sat)1 - -0.2 v i c =-10ma, i b =-1ma collector-emitter saturation voltage v ce(sat)2 - -0.5 v i c =-50ma, i b =-5ma v be(sat)1 - -1 v i c =-10ma, i b =-1ma base-emitter saturation voltage v be(sat)2 - -1 v i c =-50ma, i b =-5ma transition frequency f t 100 300 mhz v ce = -10v, i c = -10ma, f = 100mhz output capacitance c ob - 6.0 pf v cb = -10v, f = 1.0mhz, i e = 0 noise figure nf - 8.0 db v ce = -5.0v, i c = -200 a, r s = 10 , f = 1.0khz
elektronische bauelemente MMDT5451 0.2 w, 200 ma, 180 v plastic-encapsulated transistor (dual) 28-oct-2009 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente MMDT5451 0.2 w, 200 ma, 180 v plastic-encapsulated transistor (dual) 28-oct-2009 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (contd)
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