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TLE7188F 3-phase bridge driver ic data sheet, v2.1, 2007-06 automotive power
data sheet 2 v2.1, 2007-06-20 TLE7188F table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment TLE7188F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 default state of inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 description and electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 mosfet driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.1 output stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.2 operation at vs<12v - integrated charge pumps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.3 sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2 protection and diagnostic functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.2.1 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.2.2 over current warning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.2.3 dead time and shoot through protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.2.4 under voltage shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.2.5 over voltage shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2.6 over temperature warning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2.7 vcc1 check . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2.8 err pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2.9 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.3 shunt signal conditioning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.3.1 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6 application description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 6.1 layout guide lines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6.2 further application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 table of contents
vqfn-48 type package marking TLE7188F vqfn-48 TLE7188F data sheet 3 v2.1, 2007-06-20 3-phase bridge driver ic TLE7188F 1 overview features ? compatible to very low ohmic normal level input n-channel mosfets ? separate input for each mosfet ? pwm frequency up to 25khz ? fulfils specification down to 5.5v supply voltage ? low emc sensitivity and emission ? vqfn-48 package with exposed heat slug ? control inputs with ttl characteristics ? separate source connection for each mosfet ? integrated minimum dead time ? shoot through protection ? short circuit protection with fixed detection level ? disable function and sleep mode ? detailed diagnosis ? thermal overload warning for driver ic ? integrated over current warning ? integrated current sense amplifier ? 0 to 100% duty cycle ? green product (rohs compliant) ?aec qualified description the TLE7188F is a driver ic dedicated to control the 6 to 12 external mosfets forming the converter for high current 3 phase motor drives in the automotive sector. it incorporates features like short circuit detection, diagnosis and high output performance and combines it with typical automotive specific requirements like full functionality even at low battery voltages. its 3 high side and 3 low side output stages are powerful enough to drive mosfets with 400nc gate charge with approx. 150 ns fall and rise times. typical applications are cooling fan, water pump, electro-hydraulic and electric power steering. the TLE7188F is designed for 12 v power net.
TLE7188F block diagram data sheet 4 v2.1, 2007-06-20 2 block diagram figure 1 block diagram
data sheet 5 v2.1, 2007-06-20 TLE7188F pin configuration 3 pin configuration 3.1 pin assignment TLE7188F figure 2 pin configuration *1' &+ &/ &+ &/ &% 96 9'+ (55 (55 6/ */ *+ 6+ *+ 6+ */ 6/ *1' &% *+ 6+ *1' */ 6/ ,61 92 ,63 ,61 92 952 95, ,63 ,61 92 ,+ (1$ $*1' ,63 ,+ ,/ ,+ ,/ 6&'/ 97+2& ,1+ ,/ 96b2$ 7/() 7rsylhz
TLE7188F pin configuration data sheet 6 v2.1, 2007-06-20 3.2 pin definitions and functions pin symbol function 1 sl3 connection to source low side switch 3 2 vs_oa voltage supply i-dc link opamps and voltage reference buffer 3 vo1 output of opamp 1 for shunt signal amplification 4 isn1 - input of opamp 1 for shunt signal amplification 5 isp1 + input of opamp 1 for shunt signal amplification 6 vri input of bias reference amplifier 7 vro output of bias reference amplifier 8 vo2 output of opamp 2 for shunt signal amplification 9 isn2 - input of opamp 2 for shunt signal amplification 10 isp2 + input of opamp 2 for shunt signal amplification 11 vo3 output of opamp 3 for shunt signal amplification 12 isn3 - input of opamp 3 for shunt signal amplification 13 isp3 + input of opamp 3 for shunt signal amplification 14 agnd analog ground especially for the current sense opamps 15 inh inhibit pin (active low) 16 vthoc threshold voltage for overcurrent detection 17 scdl input pin to adjust short circuit detection level 18 ena enable pin (active high) 19 il3 input for low side switch 3 (active high) 20 ih3 input for high side switch 3 (active low) 21 il1 input for low side switch 1 (active high) 22 ih1 input for high side switch 1 (active low) 23 il2 input for low side switch 2 (active high) 24 ih2 input for high side switch 2 (active low) 25 err1 error signal 1 26 err2 error signal 2 27 ch2 + terminal for pump capacitor of charge pump 2 28 ch1 + terminal for pump capacitor of charge pump 1 29 cl1 - terminal for pump capacitor of charge pump 1 30 vs voltage supply 31 cl2 - terminal for pump capacitor of charge pump 2 32 gnd3 logic and power ground 33 cb1 buffer capacitor for charge pump 1 34 vdh connection to drain of high side switches for short circuit detection 35 gl1 output to gate low side switch 1 36 sl1 connection to source low side switch 1 37 gnd1 logic and power ground 38 sh1 connection to source high side switch 1 39 gh1 output to gate high side switch 1 40 cb2 buffer capacitor for charge pump 2
data sheet 7 v2.1, 2007-06-20 TLE7188F pin configuration 41 gl2 output to gate low side switch 2 42 sl2 connection to source low side switch 2 43 gh2 output to gate high side switch 2 44 sh2 connection to source high side switch 2 45 gh3 output to gate high side switch 3 46 sh3 connection to source high side switch 3 47 gnd2 logic and power ground 48 gl3 output to gate low side switch 3 pin symbol function
TLE7188F general product characteristics data sheet 8 v2.1, 2007-06-20 4 general product characteristics 4.1 absolute maximum ratings absolute maximum ratings 1) -40 c t j 150 c ; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. max. voltages 4.1.1 supply voltage v s -4.0 45 v with 10ohm and 1f 4.1.2 supply voltage v s -0.3 45 v ? 4.1.3 supply voltage v s -0.3 47 v t p <200ms 4.1.4 voltage range at ihx,ilx,errx, vox, vthoc, ena, vri, vro, scdl v dp -0.3 6.0 v ? 4.1.5 voltage range at inh v inh -0.3 18.0 v ? 4.1.6 voltage range at vs_oa v vs_oa -0.3 18.0 v ? 4.1.7 voltage range at slx v sl -7 7 v ? 4.1.8 voltage range at shx v sh -7 45 v ? 4.1.9 voltage range at glx v gl -7 18 v ? 4.1.10 voltage range at ghx v gh -7 55 v ? 4.1.11 voltage difference gxx-sxx v gs -0.3 15 v ? 4.1.12 voltage range at vdh v vdh -0.3 55 v v inh =high 4.1.13 voltage range at vdh v vdh -4.0 55 v v inh =high; with r vdh >70 ? ; 200ms, 5x 4.1.14 voltage range at vdh v vdh -0.3 28 v v inh =low 4.1.15 voltage range at vdh v vdh -4.0 28 v v inh =low; with r vdh >70 ? ; 200ms, 5x 4.1.16 voltage range at cl1 v cl1 -0.3 25 v ? 4.1.17 voltage range at ch1, cb1 v ch1 , v cb1 -0.3 25 v ? 4.1.18 voltage difference ch1-cl1 v dc1 -0.3 25 v ? 4.1.19 voltage range at cl2 v cl2 -0.3 25 v ? 4.1.20 voltage range at ch2, cb2 v ch2 , v cb2 -0.3 55 v ? 4.1.21 voltage difference ch2-cl2 v cp2 -0.3 25 v ? 4.1.22 voltage range at ispx, isnx v isi -5 5 v ? 4.1.23 output current range at vox i vox -10 10 ma ? 4.1.24 gate resistor r gate 2? ? ? temperatures 4.1.25 junction temperature t j -40 150 c? 4.1.26 storage temperature t stg -55 150 c? thermal resistance
data sheet 9 v2.1, 2007-06-20 TLE7188F general product characteristics note: stresses above the ones listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 4.2 functional range 4.1.27 junction to case r thjc ?5k/w? power dissipation 4.1.28 power dissipation (dc) @ tcase=125c p tot ?2w? esd susceptibility 4.1.29 esd resistivity 2) v esd ? 2 kv gxx excluded 4.1.30 v esd ?1kv 4.1.31 esd resistivity (charge device model) 3) v esd ?750v 1) not subject to production test, specified by design. 2) esd susceptibility hbm according to eia/jesd 22-a 114b 3) esd susceptibility cdm according to eia/jesd 22-c 101 pos. parameter symbol limit values unit conditions min. max. 4.2.1 supply voltage 1) 2) 1) max ratings for tj has to be considered as well v s 5.5 5.5 20 28 vdc t a =25c; t <1min 4.2.2 duty cycle 3) d 0 100 % ? 4.2.3 pwm frequency f pwm 0 25 khz total gate charge 400nc 4.2.4 quiescent current 4) i q ?30a v s , v dh <20 v 4.2.5 quiescent current into vdh i q_vdh ?30a v dh <20v; v s pin open 4.2.6 supply current at vs i vs ? ? ? ? 110 110 90 90 ma f pwm =20khz q g =170nc: v s = 5.5v v s = 14v v s = 18v v s = 20v 4.2.7 supply current at vs (device disabled by ena) i vs(o) ? ? 60 50 ma v s=5.5v ... 18v v s=18v ... 20v 4.2.8 supply current at vs_oa i vs_oa ?30ma v s_oa =5.5 ... 6.5v 4.2.9 voltage difference cb2-vdh v cb2-vdh -0.3 20 v operation mode 4.2.10 junction temperature t j -40 150 c absolute maximum ratings (cont?d) 1) -40 c t j 150 c ; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. max.
TLE7188F general product characteristics data sheet 10 v2.1, 2007-06-20 note: within the functional range the ic operates as described in the circuit description. the electrical characteristics are specified within the conditions given in the related electrical characteristics table. note: if the voltage difference between cb2 and shx is smaller than 2v during normal operation, there is a risk that the high side output can switch on and off without a corresponding input signal. as soon as this supply voltage recovers and the input signal changes, the output stage is automatically aligned to the input again. 4.3 default state of inputs table 1 default state of inputs note: the load condition ?c=22nf; r load =1 ? ? in the paragraph ?electrical characteristics / dynamic characteristic? means that r load is connected between the output gxx and the positive terminal of the c. the negative terminal of the c is connected to gnd and the corresponding sxx. the voltage is measured at the positive terminal of the c 2) for proper start up minimum vs=6.5v is required 3) duty cycle is referred to the high side input command (ihx); the duty cycles can be driven continuously and fully operational 4) total current consumption from power net (vs and vdh) characteristic state remark default state of ilx (if ilx left open) low low side mosfets off default state of ihx (if ihx left open) high high side mosfets off default state of ena (if ena left open) low device/outputs disabled default state of inh (if inh left open) low sleep mode, i q < 30 a default state of sense amplifier output v ox (ispx=isnx=0v) zero ampere equivalent ? status of the device and the outputs when ena=inh='1' device active and outputs functional v s =5.5 ... 28v pull up or pull down integrated resistors ixx, ena 30k ? +/-40% ? pull down integrated resistor inh 45k ? +/-40% ?
data sheet 11 v2.1, 2007-06-20 TLE7188F description and electrical characteristics 5 description and electrical characteristics 5.1 mosfet driver 5.1.1 output stages the 3 low side and 3 high side powerful push-pull output stages of the TLE7188F are all floating blocks, each with its own source pin. this allows the direct connection of the output stage to the source of each single mosfet, allowing a perfect control of each gate-source voltage even when 200a are driven in the bridge with rise and fall times clearly below 1s. all 6 output stages have the same output power and thanks to the used charge pump principle they can be switched all up to 25khz. its output stages are powerful enough to drive 6 mosfets with 400nc gate charge each or even to run 12 mosfets with 200nc each. maximum allowed power dissipation, max. junction temperature and the capabilities of the charge pump limit the use for higher frequencies. each output stage has its own short circuit detection block. for more details about short circuit detection see chapter 5.2.1 . figure 3 block diagram of driver stages including short circuit detection cb2 ghx shx vdh v scp + - level shifter floating hs driver 3x glx slx v scp + - level shifter floating ls driver 3x cb1 charge pump 1 charge pump 2 cb2 cb1 cl2 ch2 ch1 cl1 under voltage lock out inh vs error logic reset power on reset under voltage over voltage over temperature short circuit+disable over current err1 err2 ena short circuit filter scd scd scd input logic shoot through protection dead time lock / unlock ih1 il1 ih2 il2 ih3 il3 on / off on / off uvlo gnd scdl +5v r1 r2 to vs shuntx p-gnd scd scd
TLE7188F description and electrical characteristics data sheet 12 v2.1, 2007-06-20 5.1.2 operation at vs<12v - integrated charge pumps the TLE7188F provides a feature tailored to the requirements in 12v automotive applications. often the operation of an application has to be assured even at 9v supply voltage or lower. normally bridge driver ics provide in such conditions clearly less than 9v to the gate of the external mosfets, increasing their r dson and the associated power dissipation. the TLE7188F has two charge pump circuitries for external capacitors. the operation of the charge pumps is independent upon the pulse pattern of the mosfets. the output of the charge pumps are regulated. the first charge pump doubles the supply voltage as long as it is below 8v. at 8v supply voltage and above, charge pump 1 regulates its output to 15v typically. above 15v supply voltage, the output voltage of charge pump 1 will increase linearly.yet, the output will not exceed 25v. charge pump 2 is regulated as well but it is pumped to the voltage on vs. normally vdh and vs are in the same voltage range. the driver is not designed to have significant higher voltages at vdh compared to vs. this would lead to reduced supply voltages for the high side output stages. charge pump 1 supplies the low side mosfets and output stages for the low side mosfets with sufficient voltage to assure 10v at the mosfets gate even if the supply voltage is below 10v. charge pump 2 supplies the output stages for the high side mosfets with sufficient voltage to assure 10v at the mosfets gate. in addition, the charge pump 1 supplies most of the internal circuits of the driver ic, including charge pump 2. output of charge pump 1 is the buffer capacitor cb1 which is referenced to gnd. charge pump 2 supplies the high side mosfets and the output stages for the high side mosfets with sufficient voltage to assure 10v at the high side mosfet gate. output of charge pump 2 is buffer capacitor cb2 which is referenced to vdh. this concept allows to drive all external mosfets in the complete duty cycle range of 0 to 100% without taking care about recharging of any bootstrap capacitors. this simplifies the use in all applications especially in motor drives with block wise commutation. the charge pumps are only deactivated when the device is put into sleep mode via inh. during start up of the TLE7188F the external mosfets should be kept off until the charge pumps have ramped up to their final values. hence, following procedure is recommended for start up: - keep ena = low (output stages disabled, all mosfets off, signals on ihx and ilx dont care) or ena = high (output stages enabled) and ihx = high and ilx = low (all mosfets off) - apply the supply voltage to the TLE7188F and pull inh = high (the order does not matter) - wait until the charge pump capacitors are fully charged (pls. see ?wake up time?) - the TLE7188F is now ready for normal operation (pull ena = high and apply the pwm patterns to ihx and ilx) the size of the charge pump capacitors (pump capacitors cpx as well as buffer capacitors cbx) can be varied between 1 f and 4.7 f. yet, larger capacitor values result in higher charge pump voltages and less voltage ripple on the charge pump buffer capacitors cbx (which supply the internal circuits as well as the external mosfets, pls. see above). besides the capacitance values the esr of the buffer capacitors cbx determines the voltage ripple as well. it is recommended to use buffer capacitors cbx that have small esr. pls. see also chapter 5.1.3 for capacitor selection. 5.1.3 sleep mode when the inh pin is set to low, the driver will be set to sleep mode. the inh pin switches off the complete supply structure of the device and leads finally to an intervillage shut down of the complete driver. enabling the device with the inh pin means to switch on the supply structure. the device will run through power on reset during wake up. it is recommended to perform a reset by ena after wake up to remove possible err signals; reset is performed by keeping ena pin low until the charge pump voltages have ramped up. enabling and disabling with the inh pin is not very fast. for fast enable / disable the ena pin is recommended.
data sheet 13 v2.1, 2007-06-20 TLE7188F description and electrical characteristics when the TLE7188F is in inh mode (inh is low) or when the supply voltage is not available on the vs pin, then the driver ic is not supplied, the charge pumps are inactive and the charge pump capacitors are discharged. pin cb2 (+ terminal of buffer capacitor 2) will decay to gnd. when the battery voltage is still applied to vdh (- terminal of buffer capacitor 2) the buffer capacitor 2 will slowly charged to battery voltage, yet with reversed polarity compared to the polarity during regular operation. hence, it is important to use a buffer capacitor 2 (cb2) that can withstand both, +25 v during operation mode and -v bat during inh mode, e.g. a ceramic capacitor. in case of load dump during inh mode, the negative voltage across cb2 will be clamped to -31 v (cb2 referenced to vdh). 5.1.4 electrical characteristics electrical characteristics mosfet drivers - dc characteristics v s = 5.5 to 20v, t j = -40 to +150 c, f pwm < 25khz , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. 5.1.1 low level output voltage v g_ll ??0.2v i =30ma 5.1.2 high level output voltage, low side v g_hl 7.5 ? 13 v v s=5.5..8v; i =-2ma 5.1.3 high level output voltage, high side v g_hl 6.5 ? 13 v v s=5.5..8v; i =-2ma 5.1.4 high level output voltage v g_hl 9?13v v s=8..20v; i =-2ma 5.1.5 high level output voltage difference d vg_h ??1.0v i =-100ma; v s=20v 5.1.6 gate drive output voltage v gs1_d ? ? 0.2 v disabled; 5.5v< v s<28v; i =10ma 5.1.7 gate drive output voltage tj=-40c tj=25c tj=150c v gs2_5 ? ? ? ? ? ? 1.4 1.2 1.0 v uvlo; vs<=5.5v 5.1.8 gate drive output voltage high side tj=-40c tj=25c tj=150c v gs3_5 ? ? ? ? ? ? ? 1.4 1.2 1.0 vover voltage 5.1.9 gate drive output voltage low side v gs_5 ??0.2vover voltage 5.1.10 low level input voltage of ixx, ena v i_ll ??1.0v? 5.1.11 high level input voltage of ixx, ena v i_hl 2.0??v? 5.1.12 low level input voltage of inh v i_ll ??0.75v? 5.1.13 high level input voltage of inh v i_hl 2.1??v? 5.1.14 input hysteresis of ihx, ilx, ena d vi 50 ? ?- mv v s=5.5..8v 5.1.15 input hysteresis of ihx, ilx, ena d vi 100 200 ?- mv v s=8..20v 5.1.16 output bias current shx i shx -1.6 -1.0 -0.3 ma v s=5.5..20v; v shx =0..(vs+1); v ilx =low; v ihx =high 5.1.17 output bias current slx i slx -1.6 -1.0 -0.3 ma v s=5.5..20v; v slx =0..7v; v ilx =low; v ihx =high
TLE7188F description and electrical characteristics data sheet 14 v2.1, 2007-06-20 electrical characteristics mosfet drivers - dynamic characteristics v s = 5.5 to 20v, t j = -40 to +150 c, f pwm < 25khz , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. 5.1.18 fixed internal dead time t dt 50 ? 200 ns ? 5.1.19 turn on current, peak i g(on) ?-0.8?a v gxx - v sxx =0v; v s=5.5..8v; c =22nf; r load =1 ? 5.1.20 turn on current, peak i g(on) ?-1.5?a v gxx - v sxx =0v; v s=8..20v; c =22nf; r load =1 ? 5.1.21 turn off current, peak i g(off) ?1.5?a v gxx - v sxx =10v; v s=8..20v; c =22nf; r load =1 ? 5.1.22 rise time (20-80%) t j = -40c t j = 25c t j = 150c t g_rise ? 150 400 400 700 ns c =22nf; r load =1 ? 5.1.23 fall time (20-80%) t j = -40c t j = 25c t j = 150c t g_fall ? 150 230 230 500 ns c =22nf; r load =1 ?; 5.1.24 input propagation time (low on) t p(iln) 90 190 290 ns c =22nf; r load =1 ? 5.1.25 input propagation time (low off) t p(ilf) 0100200ns c =22nf; r load =1 ? 5.1.26 input propagation time (high on) t p(ihn) 90 190 290 ns c =22nf; r load =1 ? 5.1.27 input propagation time (high off) t p(ihf) 0100200ns c =22nf; r load =1 ? 5.1.28 absolute input propagation time difference (all channels turn on) t p(an) ??70ns c =22nf; r load =1 ? 5.1.29 absolute input propagation time difference (all channels turn off) t p(af) ??50ns c =22nf; r load =1 ? 5.1.30 absolute input propagation time difference (1channel high off - low on) t p(1hfln) ? ? 180 ns c =22nf; r load =1 ? 5.1.31 absolute input propagation time difference (1channel low off - high on) t p(1lfhn) ? ? 180 ns c =22nf; r load =1 ? 5.1.32 absolute input propagation time difference (all channel high off - low on) t p(ahfln) ? ? 180 ns c =22nf; r load =1 ? 5.1.33 absolute input propagation time difference (all channel low off - high on) t p(alfhn) ? ? 180 ns c =22nf; r load =1 ?
data sheet 15 v2.1, 2007-06-20 TLE7188F description and electrical characteristics 5.1.34 wake up time; inh low to high t inh_pen ? ? 20 ms driver fully functional; v s=6.5..8v; v enax =low; cpx=cbx=4,7f 5.1.35 wake up time; inh low to high t inh_pen ? ? 10 ms driver fully functional; v s=8..20v; v enax =low; cpx=cbx=4,7f 5.1.36 wake up time logic functions; inh low to high t inh_log ? ? 10 ms driver fully functional; v s=6.5..8v; v enax =low; cpx=cbx=4,7f 5.1.37 wake up time logic functions; inh low to high t inh_log ??5msdriver fully functional; v s=8..20v; v enax =low; cpx=cbx=4,7f 5.1.38 inh propagation time to disable the output stages t inh_pdi ??10s v s=5.5..8v 5.1.39 inh propagation time to disable the output stages t inh_pdi ??8s v s=8..20v 5.1.40 inh propagation time to disable the entire driver ic t inh_pdi ??300s? 5.1.41 supply voltage v s for wake up v vswu 6.5 ? ? v diagnostic, opamp working 5.1.42 charge pump frequency f cp 38 55 72 khz ? electrical characteristics mosfet drivers - dynamic characteristics v s = 5.5 to 20v, t j = -40 to +150 c, f pwm < 25khz , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max.
TLE7188F protection and diagnostic functions data sheet 16 v2.1, 2007-06-20 5.2 protection and diagnostic functions 5.2.1 short circuit protection the TLE7188F provides a short circuit protection for the external mosfets. it is a monitoring of the drain-source voltage of the external mosfets. as soon as this voltage is higher than the short circuit detection limit, a capacitor will be charged. the high side and the low side output stage of the same half bridge use the same capacitor (see figure 3 ). this capacitor is discharged permanently with a current which is smaller than the charging current. this charge and discharge ratio is specified by means of duty cycles at which a short circuit is detected or not detected. after a delay of about 12 s all external mosfets will be switched off until the driver is reset by the ena pin. the error flag is set. the drain-source voltage monitoring of the short circuit detection for a certain external mosfet is active as soon as the corresponding input is set to "on" and the dead time is expired. the short circuit detection level is adjustable in an analogue manner by the voltage setting at the scdl pin. there is a 1:1 translation between the voltage applied to the scdl pin and the drain-source voltage limit. for instance to trigger the scd circuit at 1 v drain-source voltage, the scdl pin must be set to 1 v as well. the drain-source voltage limit can be chosen between 0.5 ... 2.5 v. a setting of 5 v at the scdl pin will disable the short circuit protection function. disabling the short circuit protection function has no impact on the overcurrent warning (see next chapter). 5.2.2 over current warning the TLE7188F offers the possibility to shut down t he output stages if a current threshold is reached (see figure 4 ). the output of the current sense opamp is connected to an integrated comparator, comparing the amplified current sense signal with an external adjustable threshold value. after the comparator a blanking time (1.5 s typ.) is implemented to avoid false triggering caused by overswing of the current sense signal. if the overcurrent situation is detected, only an error signal is given. during overcurrent the driver ic works normally. the error signal disappears as soon as the current decreases below the overcurrent limit set on the vthoc pin. the error signal disappears as well when the current commutates from the low side mosfet to the associated high side mosfet (no current through the shunt resistor). it is the decision of the user to react on the over current signal by modifying the ixx patterns to lower the current. the overcurrent warning can be disabled by connecting the overcurrent threshold pin to gnd (v thoc = 0 v). 5.2.3 dead time and shoot through protection in bridge applications it has to be assured that the external high side and low side mosfets are not "on" at the same time, connecting directly the battery voltage to gnd. the dead time generated in the TLE7188F is fixed to a minimum value. this function assures a minimum dead time if the input signals coming from the c are faulty. the exact dead time of the bridge is usually controlled by the pwm generation unit of the c. in addition to this dead time, the TLE7188F provides a locking mechanism, avoiding that both external mosfets of one half bridge can be switched on at the same time. this functionality is called shoot through protection. if the command to switch on both high and low side switches in the same half bridge is given at the input pins, the command will be ignored. 5.2.4 under voltage shut down the TLE7188F has an integrated under voltage shut down, to assure that the behavior of the device is predictable in all voltage ranges.
data sheet 17 v2.1, 2007-06-20 TLE7188F protection and diagnostic functions if the voltage of a charge pump buffer capacitors cbx reaches the under voltage shut down level for a minimum specified filter time, the gate-source voltage of all external mosfets will be actively pulled to low. in this situation the short circuit detection of this output stage is deactivated to avoid a latching shut down of the driver. as soon as the charge pump buffer voltage recovers, the output stage condition will be aligned to the input patterns automatically.this allows to continue operation of the motor in case of under voltage shut down without a reset by the c. under voltage shut down will not occur when v s > 6 v, q g < 250 nc, f pwm < 25 khz, and the charge pump capacitors cxx = 4.7 f. 5.2.5 over voltage shut down the TLE7188F has an integrated over voltage shut down to avoid destruction of the ic at high supply voltages.the voltage is measured at the vs and the vdh pin. when one of them or all of them exceed the over voltage shut down level for more than the specified filter time then the external mosfets are switched off. in addition, over voltage will shut down the charge pumps and will discharge the charge pump capacitors. this results in an under voltage condition which will be indicated on the errx pins. during over voltage shut down the external mosfets and the charge pumps remain off until a reset is performed. 5.2.6 over temperature warning if the junction temperature is exceeding typ. 170c an error signal is given as warning. the driver ic will continue to operate in order not to disturb the application. the warning is removed automatically when the junction temperature is cooling down. it is in the responsibility of the user to protect the device against over temperature destruction. 5.2.7 vcc1 check to assure a high level of system safety, the TLE7188F provides an vcc1 check. the 5.0v supply for the i/o of the c is checked by internally monitoring the voltage applied to the ena pin. the vcc1 check is active when the signal on the ena pin is high and is triggered by the ena signal going high. the vcc1 check is inactive when no ena signal is applied or the ena signal is low (= driver ic disabled). as the ena pin is a digital input, a low pass filter (< 1 mhz) is integrated to avoid faulty triggering. the filtered ena signal is then supervised in terms of under voltage and over voltage as a measure of the vcc1 voltage. in case of under- or over voltage at vcc1, the driver ic is disabled and latched. to restart the output stages, a reset has to be performed with the ena pin. 5.2.8 err pins the TLE7188F has two status pins to provide diagnostic feedback to the c. the outputs of these pins are 5v push pull stages, they are either high or low. table 2 overview of error conditions err1 err2 driver conditions low low under voltage or vcc1 check error low high over temperature or over voltage high low short circuit detection or over current high high no errors
TLE7188F protection and diagnostic functions data sheet 18 v2.1, 2007-06-20 table 3 behaviour at different error conditions note: all errors do not lead to sleep mode. sleep mode is only initiated with the inh pin. the latch and restart behaviour allows to distinguish between the different error types combined at the err signals. table 4 prioritization of errors reset of error registers and disable the TLE7188F can be reset with the help of the enable pin ena. if the ena pin is pulled to low for a specified minimum time, the error registers are cleared and the external mosfets are switched off actively. during disable only the errors under voltage shut down and over temperature warning are shown. other errors are not displayed. 5.2.9 electrical characteristics error condition restart behavior shuts down... short circuit detection latch, reset must be performed at ena pin all external power -mosfets over current warning self clearing nothing under voltage auto restart all external power -mosfets over voltage latch, reset must be performed at ena pin all external power -mosfets over temperature warning self clearing nothing vcc1 check latch, reset must be performed at ena pin all external power -mosfets priority error 1 vcc1 check 2 short circuit detection 3 under voltage detection 4 over voltage detection 5 over temperature over current electrical characteristics - protection and diagnostic functions v s = 5.5 to 20v, t j = -40 to +150 c , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. over temperature 5.2.1 over temperature warning 1) t j(ow) 150 170 190 c 5.2.2 hysteresis for over temperature warning 1) d tj(ow) ?20?c over current warning 5.2.3 over current threshold v thoc 2?4.5v v s=5.5..8v 5.2.4 over current threshold v thoc 2?4.8v v s=8..20v 5.2.5 over current disabled v thoc ??1v?
data sheet 19 v2.1, 2007-06-20 TLE7188F protection and diagnostic functions 5.2.6 input offset voltage of oc comp v io -50 ? 50 mv ? 5.2.7 input offset voltage temperature drift of oc comp 1) v io -50?5mv? 5.2.8 over current threshold hysteresis d vthoc 25??mv v s=5.5..8v 5.2.9 over current threshold hysteresis d vthoc 50 80 ? mv v s=8..20v 5.2.10 blanking time of overcurrent t btoc 1.0 1.5 3.0 s ? short circuit detection 5.2.11 filter time of short circuit protection t scp(off) ? 6.8 ? s on request 5.2.12 filter time of short circuit protection t scp(off) 8 1216sdefault 5.2.13 maximum duty cycle for no scd 2) d yscdmax ??6% f pwm =20khz at ihx or ilx and at static applied sc 5.2.14 minimum duty cycle for periodic scd 2) d yscdmin 13??% f pwm =20khz at ihx or ilx and at static applied sc 5.2.15 voltage range on vscd pin to adjust the vds limit v scdl(off) 0.5 ? 2.5 v short circuit detection is active 5.2.16 short circuit disable voltage at vscd pin v scdl(dis) 4.5 ? 5.5 v short circuit detection is disabled 5.2.17 accuracy of scd (v scdl /v ds(off) ) a sc(off) 0.85 ? 1.15 ? v scdl(off) set to 1.. 2.5v 5.2.18 accuracy of scd (v scdl /v ds(off) ) a sc(off) 0.7 ? 1.3 ? v scdl(off) set to 0.5.. 1v err pins 5.2.19 high level output voltage of errx v oherr 4.0 ? 5.2 v i = -0.2ma 5.2.20 low level output voltage of errx v olerr -0.1 ? 0.4 v i = 0.2ma over- and under voltage 5.2.21 over voltage shut down v ov(off) 28 ? 33 v ? 5.2.22 over voltage filter time t ov 30 ? 65 s ? 5.2.23 under voltage shut down cb1 v uv1 7.4 8.2 9.0 v cb1 to gnd 5.2.24 under voltage shut down cb2 v uv2 4.2 ? 6.2 v cb2 to vdh 5.2.25 hysteresis of under voltage shut down on cb1 and cb2 v huv1,2 ?1.0?v? enable and reset 5.2.26 reset time to clear err registers t res1 2.0??s? electrical characteristics - protection and diagnostic functions (cont?d) v s = 5.5 to 20v, t j = -40 to +150 c , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max.
TLE7188F protection and diagnostic functions data sheet 20 v2.1, 2007-06-20 5.2.27 low time of ena signal without reset t res0 ??0.5s? 5.2.28 ena propagation time (for enable / disable) t pena ??1.0s? 5.2.29 return time to normal operation at auto-restart t ar ??1.0s? vcc1 check 5.2.30 under voltage detection level v vcu 4.0 ? 4.5 v ? 5.2.31 over voltage detection level v vco 5.5 ? 6.0 v ? 5.2.32 under voltage filter time t vc ? ? 0.1 s voltage drop at ena to 3.5v 5.2.33 over voltage filter time t vc ? ? 0.15 s voltage overshoot at ena to 6v 5.2.34 rise time on ena (to avoid vcc1 check error) t ena_r ??2s v ena =1..4.5v 1) not subject to production test; specified by design 2) parameters describe the behaviour of the internal scd circuit. therefore only internal delay times are considered. in application dead-/ delay times determined by application circuit (switching times of mosfets, adjusted dead time) have to be considered as well. electrical characteristics - protection and diagnostic functions (cont?d) v s = 5.5 to 20v, t j = -40 to +150 c , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max.
data sheet 21 v2.1, 2007-06-20 TLE7188F shunt signal conditioning 5.3 shunt signal conditioning the TLE7188F incorporates three fast and precise operational amplifiers for conditioning and amplification of the shunt signals sensed in the three phases. additionally, one reference bias buffer is integrated to provide an adjustable bias reference for the three opamps. the voltage divider on the vri pin should be less than 50 kohm, the filtering capacitor less than 1.2 f - if needed at all. the gain of the opamps is adjustable by external resistors within a range of 5 to 15. when v(isp) = v(isn), vo provides the reference voltage vro. vro is normally half of the regulated voltage provided from an external voltage regulator for the adc used to read the current sense signal. the additional buffer allows bi-directional current sensing and permits the adaptation of the reference bias to different c i/o voltages. the reference buffer assures a stable reference voltage even in the high frequency range. the reference bias buffer is used for all of the opamps. the opamps of the TLE7188F demonstrate low offset voltages and very little drift over temperature, thus allowing accurate phase current measurements. figure 4 shunt signal conditioning block diagram and over current limitation over current warning see chapter 5.2.2 . vri vro isp1 isn1 - + - + shunt 1 rfb rfb rs rs - + vthoc vo1 blanking time 1.5s to error logic over current bias reference i-dc link opamp1 oc comp 5v 5v isp2 isn2 - + shunt 2 i-dc link opamp2 - + blanking time 1.5s over current oc comp vo2 isp3 isn3 - + shunt 3 i-dc link opamp3 - + blanking time 1.5s over current oc comp vo3 rfb rfb rs rs rs rs adjustable over current limit (vthoc = 0 oc disabled) to adcs TLE7188F adjustable bias reference v in1 r vri r vri c vri c vri < 1.2 f (if needed) r vri < 50 kohm
TLE7188F shunt signal conditioning data sheet 22 v2.1, 2007-06-20 5.3.1 electrical characteristics electrical characteristics - current sense signal conditioning v s = 5.5 to 20v, t j = -40 to +150 c, f pwm < 25khz , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. 5.3.1 series resistors r s 100 500 1000 ? ? 5.3.2 feedback resistor limited by the output voltage dynamic range r fb 2000 7500 ? ? ? 5.3.3 resistor ratio (gain ratio) r fb/rs 5?15?? 5.3.4 steady state differential input voltage range across vin 1) v in(ss) -400 ? 400 mv ? 5.3.5 input differential voltage (ispx - isnx) v idr -800 ? 800 mv ? 5.3.6 input voltage (both inputs - gnd) (isp - gnd) or (isn -gnd) v ll -800 ? 2000 mv ? 5.3.7 input voltage (both inputs - gnd) (isp - gnd) or (isn -gnd) v ll -800 ? 1500 mv v s=5.5v 5.3.8 absolute input offset voltage of the i-dc link opamp, including drift over temperature range v io ??2mv r s =500 ? ; v cm =0v; v o =1.65v; v ri =1.65v 5.3.9 input offset voltage difference of the i-dc link opamps, including drift over temperature range v io ??+/-1mv r s =500 ? ; v cm =0v; v o =1.65v; v ri =1.65v 5.3.10 absolute input offset voltage of reference buffer v io ??3mv? 5.3.11 vri input range v ri 1.2 ? 2.8 v ? 5.3.12 input bias current i ib -300 ? ? a v cm =0v; v o =open 5.3.13 high level output voltage of vox v oh 4.8 ? 5.2 v i oh =-2ma; v s=6v 5.3.14 low level output voltage of vox v ol -0.1 ? 0.2 v i oh =3ma 5.3.15 output voltage of vox v ri = 2.5v, v ri =1.65v, v or 2.467 1.617 2.50 1.65 2.533 1.683 v v in(ss) =0v; gain=15; t j=25c 5.3.16 output short circuit current i sc 5??ma? 5.3.17 differential input resistance 2) r i 100??k ? ? 5.3.18 common mode input capacitance 2) i sc ??10pf10khz 5.3.19 common mode rejection ratio at dc cmrr = 20*log((vout_diff/vin_diff) * (vin_cm/vout_cm)) c mrr 80??db?
data sheet 23 v2.1, 2007-06-20 TLE7188F shunt signal conditioning 5.3.20 common mode suppression 3) with cms = 20*log(vout_cm/vin_cm) freq =100khz freq = 1mhz freq = 10mhz c ms ? ? ? 62 43 33 ? ? ? db v in =360mv* sin(2* *freq*t); r s=500 ? ; r fb=7500 ? ; v ri=1.65, 2.5v 5.3.21 slew rate i sc ?10?v/sgain>= 5; r l =1.0k ? ; c l =500pf 5.3.22 large signal open loop voltage gain (dc) a ol 80 100 ? db ? 5.3.23 unity gain bandwidth g bw 10 20 ? mhz r l =1k ? ; c l =100pf 5.3.24 phase margin 2) f m ? 50 ? gain>= 5; r l =1k ? ; c l =100pf 5.3.25 gain margin 2) a m ?12?db r l =1k ? ; c l =100pf 5.3.26 bandwidth b wg 1.6 ? ? mhz gain=15; r l =1k ? ; c l =500pf; r s =500 ? 5.3.27 output settle time to 98% 1) t set ?11.8sgain=15; r l =1k ? ; c l =500pf; 0.3< v o < 4.8v; v s>6v, r s =500 ? 5.3.28 output rise time 10% to 90% 1) t irise ??1sgain=15; r l =1k ? ;c l =500pf; 0.36v r s =500 ? 5.3.29 output fall time 90% to 10% 1) t ifall ??1sgain=15; r l =1k ? ; c l =500pf; 0.3< v o < 4.8v; v s>6v; r s =500 ?; 1) input current and output amplifier characteristics: "output signal must be amplified and available at 2s after input signal change (gain 5...15) 2) not subject to production test; specified by design 3) without considering any offsets such as input offset voltage, internal miss match and assuming no tolerance error in external resistors. electrical characteristics - current sense signal conditioning (cont?d) v s = 5.5 to 20v, t j = -40 to +150 c, f pwm < 25khz , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max.
TLE7188F application description data sheet 24 v2.1, 2007-06-20 6 application description in the automotive sector there are more and more applications requiring high performance motor drives, such as electro-hydraulic or electric power steering. in these applications 3 phase motors, synchronous and asynchronous, are used, combining high output performance, low space requirements and high reliability. figure 5 application circuit - TLE7188F note: this is a very simplified example of an application circuit. the function must be verified in the real application.
data sheet 25 v2.1, 2007-06-20 TLE7188F application description 6.1 layout guide lines please refer also to the simplified application example. ? three separated bulk capacitors c b should be used - one per half bridge ? three separated ceramic capacitors c c should be used - one per half bridge ? each of the 3 bulk capacitors c b and each of the 3 ceramic capacitors c c should be assigned to one of the half bridges and should be placed very close to it ? the components within one half bridge should be placed close to each other: high side mosfet, low side mosfet, bulk capacitor c b and ceramic capacitor c c (c b and c c are in parallel) and the shunt resistor form a loop that should be as small and tight as possible. the traces should be short and wide ? the three half bridges can be separated; yet, when there is one common gnd referenced shunt resistor for the three half bridges the sources of the three low side mosfets should be close to each other and close to the common shunt resistor ? vdh is the sense pin used for short circuit detection; vdh should be routed (via rvdh) to the common point of the drains of the high side mosfets to sense the voltage present on drain high side ? cb2 is the buffer capacitor of charge pump 2; its negative terminal should be routed to the common point of the drains of the high side mosfets as well - this connection should be low inductive / resistive ? additional r-c snubber circuits (r and c in series) can be placed to attenuate/suppress oscillations during switching of the mosfets, there may be one or two snubber circuits per half bridge, r (several ohm) and c (several nf) must be low inductive in terms of routing and packaging (ceramic capacitors) ? the exposed pad on the backside of the vqfn is recommended to connect to gnd 6.2 further application information ? for further information you may contact http://www.infineon.com/
TLE7188F package outlines data sheet 26 v2.1, 2007-06-20 7 package outlines figure 6 vqfn-48 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). gvq0104 9 a index marking b 0.9 max. 0.08 48x 1 2 m a x . s e a t i n g p l a n e c (0.2) 0.05 max. standoff 1 12 37 48 13 24 25 36 1 1 x 0 . 6 5 = 7 . 1 5 0 . 6 5 11 x 0.65 = 7.15 0.65 6 . 8 0 . 1 5 0.05 0.35 0.1 9 0.1 8.75 0.1 48x a m b c 0.15 6.8 index marking 0.05 0.55 (0.65) 0 . 1 9 0 . 1 8 . 7 5 gps09181 you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
data sheet 27 v2.1, 2007-06-20 TLE7188F revision history 8 revision history version date changes v2.1 2007-06-20 description and electrical characteristics - mosfet driver, output stages: start up described in more detail electrical characteristics - mosfet drivers: turn on current, peak, specified as negative current (going out of the pin ghx and glx) electrical characteristics - current sense signal conditioning: input bias current specified as negative current (going out of the pin isnx and ispx)
edition 2007-06-20 published by infineon technologies ag 81726 munich, germany ? 2007 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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