? 2010 ixys corporation, all rights reserved ixga12n120a3 IXGP12N120A3 ixgh12n120a3 v ces = 1200v i c90 = 12a v ce(sat) 3.0v symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 22 a i c90 t c = 90c 12 a i cm t c = 25c, 1ms 60 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 24 a (rbsoa) clamped inductive load v ce 0.8 ? v ces p c t c = 25c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. m d mounting torque (to-220 & to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100212b(11/10) high surge current ultra-low vsat pt igbts for up to 3khz switching genx3 tm 1200v igbts g = gate d = drain s = source tab = drain to-247 (ixgh) g s d d (tab) to-263 aa (ixga) g s d (tab) g d s to-220ab (ixgp) d (tab) features z optimized for low conduction losses z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces , v ge = 0v 10 a t j = 125 c 275 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c90 , v ge = 15v, note 1 2.40 3.0 v t j = 125 c 2.75 v
ixys reserves the right to change limits, test conditions, and dimensions. ixga12n120a3 IXGP12N120A3 ixgh12n120a3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 , v ce = 10v, note 1 5.2 8.8 s i c(on) v ge = 10v, v ce = 10v, note 1 44 a c ies 550 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 30 pf c res 8 pf q g 20.4 nc q ge i c = i c90 , v ge = 15v, v ce = 600v 3.1 nc q gc 8.5 nc t d(on) 35 ns t r 140 ns t d(off) 62 ns t f 1035 ns t d(on) 35 ns t r 167 ns t d(off) 70 ns t f 1475 ns r thjc 1.25 c/w r thcs to-247 0.21 c/w to-220 0.50 c/w resistive switching times, t j = 25c i c = i c90 , v ge = 15v v ce = 960v, r g = 10 resistive switching times, t j = 125c i c = i c90 , v ge = 15v v ce = 960v, r g = 10 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted to-263 outline pins: 1 - gate 2 - drain to-220 outline 1 = gate 2 = collector 3 = emitter 4 = collector 1 = gate 2 = collector 3 = emitter
? 2010 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0.00.51.01.52.02.53.03.54.04.5 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 9v 6v 5v 7v 8v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 7v 5v 8v 10v 11v 9v 13v 6v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 9v 7v 5v 8v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50-25 0 255075100125150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 24a i c = 12a i c = 6a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 24a t j = 25oc 6a 12a fig. 6. input admittance 0 5 10 15 20 25 30 35 3456789 v ge - volts i c - amperes t j = - 40oc 25oc 125oc ixga12n120a3 IXGP12N120A3 ixgh12n120a3
ixys reserves the right to change limits, test conditions, and dimensions. ixga12n120a3 IXGP12N120A3 ixgh12n120a3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 11. maximum transient thermal impedance aaaaaa 3.00 fig. 7. transconductance 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10121416182022 q g - nanocoulombs v ge - volts v ce = 600v i c = 12a i g = 10ma fig. 9. reverse-bias safe operating area 0 4 8 12 16 20 24 28 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2010 ixys corporation, all rights reserved ixys ref: g_12n120a3(2m)02-11-10 fig. 13. resistive turn-on rise time vs. collector current 100 120 140 160 180 200 220 240 6 8 10 12 14 16 18 20 22 24 i c - amperes t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 15. resistive turn-off switching times vs. junction temperature 800 900 1000 1100 1200 1300 1400 1500 1600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 30 40 50 60 70 80 90 100 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 960v i c = 12a i c = 24a fig. 16. resistive turn-off switching times vs. collector current 600 800 1000 1200 1400 1600 1800 2000 2200 6 8 10 12 14 16 18 20 22 24 i c - amperes t f - nanoseconds 30 40 50 60 70 80 90 100 110 t d ( off ) - nanoseconds t f t d(off ) - - - - r g = 10 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 12. resistive turn-on rise time vs. junction temperature 100 120 140 160 180 200 220 240 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 960v i c = 12a i c = 24a fig. 17. resistive turn-off switching times vs. gate resistance 1100 1200 1300 1400 1500 1600 1700 1800 0 30 60 90 120 150 180 210 240 270 300 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 24a i c = 12a fig. 14. resistive turn-on switching times vs. gate resistance 140 160 180 200 220 240 260 0 30 60 90 120 150 180 210 240 270 300 r g - ohms t r - nanoseconds 20 40 60 80 100 120 140 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 24a i c = 12a ixga12n120a3 IXGP12N120A3 ixgh12n120a3
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