2SB075040AMLJL hangzhou?silan?microelectronics?co.,ltd rev:1.0???????2008.04.01 http:?www.silan.com.cn???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?1 2SB075040AMLJL?schottky?barrier?diode?chips description ? ? 2SB075040AMLJL?is?a?schottky?barrier?diode chips?fabricated?in?silicon?epitaxial?planar technology; ? ? low?power?losses,?high?efficiency; ? ? guard?ring?construction?for?transient?protection; ? ? high?esd?capability; ? ? high?surge?capability; ? ? packaged?products?are?widely?used?in?switching power?suppliers,?polarity?protection?circuits?and other?electronic?circuits.; ? ? ?chip?size:750 m m??x?750 m m; ? chip?thickness:?21020 m m; l b l a chip?topography?and?dimensions la:?chip?size:?750 m m; lb:?pad?size:?655 m m; ordering?specifications product?name specification 2SB075040AMLJL for?au?and?alsi?wire?bonding ?package absolute?maximum?ratings parameters symbol ratings unit maximum?repetitive?peak?reverse?voltage v rrm 40 v average?forward?rectified?current i fav 1 a peak?forward?surge?current@8.3ms i fsm 30 a maximum?operation?junction??temperature t j 125 c storage?temperature?range t stg -40~125 c electrical?characteristics?(t amb =25 c) parameters symbol test?conditions min. max. unit reverse?voltage v br i r =100 m a 40 -- v forward?voltage v f i f =1a -- 0.51 v reverse?current i r v r =40v -- 30 m a
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