triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 1 4 watt ka band packaged amplifier TGA4905-CP key features and performance ? 36 dbm vsat band psat ? 22 db nominal gain ? 25 - 31 ghz frequency range ? 0.25m phemt technology ? bias conditions: 6 v, 2.1 a (quiescent) up to 4 a under rf drive ? package dimensions: 13.34 x 9.65 x 1.85 mm (0.525 x 0.380 x 0.073 in) measured performance bias conditions: vd=6 v idq=2.1 a primary applications ? satellite ground terminals ? point to point product description the triquint TGA4905-CP is a compact 4 watt high power amplifier packaged mmic for ka-band applications. the part is designed using triquints proven standard 0.25 um gate power phemt production process. the tga4905 provides a nominal 36 dbm of output power at an input power level of 18 dbm from 25-31 ghz with a small signal gain of 22 db. the part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and lmds. the TGA4905-CP is 100% rf tested to ensure performance compliance. 0 5 10 15 20 25 30 25 26 27 28 29 30 31 frequency (ghz) gain (db) -30 -20 -10 0 10 20 30 return loss (db) gain input rl output rl 20 22 24 26 28 30 32 34 36 38 40 25 26 27 28 29 30 31 frequency (ghz) pout @ pin=18dbm (dbm) note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 2 TGA4905-CP table i maximum ratings symbol parameter 1/ value notes v d drain voltage 8 v 2/ v g gate voltage range -5 v to 0 v i d drain current (quiescent) 3.0 a 2/ | i g | gate current 62 ma p in input continuous wave power 24 dbm 2/ p d power dissipation 16.8 w 2/ 3 / t ch operating channel temperature 150 0 c 4/ 5 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ p d is the power dissipation allowed in order to reach a channel temperature of 150 c with a package base temperature of 70 c. when operated at this power dissipation with a baseplate temperature of 70 c, the mttf is 1.0e+6 hours. 4/ these ratings apply to each individual fet. 5/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 3 table ii rf characterization table (t a = 25 q c, nominal) (vd = 6 v, idq = 2.1 a) symbol parameter test condition typical units gain small signal gain f = 25 C 31ghz 22 db irl input return loss f = 25 C 31ghz 10 db orl output return loss f = 25 C 31ghz 8 db pwr output power @ psat f = 25 C 31ghz 36 dbm table iii thermal information parameter test conditions t ch ( q c) r 4 jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of package) v d = 6 v i d = 2.1 a (quiescent) p diss = 12.6 w 128.35 4.63 6.9 e+6 note: backside of package is at 70 c baseplate temperature. worst case is at saturated output power when dc power consumption rises to 23 w with 4 w rf power delivered to load. power dissipated is 19 w and the temperature rise in the channel is 88 c. baseplate temperature must be reduced to 62 c to remain below the 150 c maximum channel temperature. TGA4905-CP
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 4 measured fixtured performance v d = 6 v idq = 2.1 a TGA4905-CP 20 22 24 26 28 30 32 34 36 38 40 25 26 27 28 29 30 31 frequency (ghz) pout @ pin=18dbm (dbm) 0 5 10 15 20 25 30 20 22 24 26 28 30 32 34 36 frequency (ghz) gain (db) -30 -20 -10 0 10 20 30 return loss (db) gain input rl output rl
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 5 0 5 10 15 20 25 30 35 40 -5-3-1135791113151719 pin (dbm) pout (dbm) & power gain (db) 1.8 2.1 2.4 2.7 3 3.3 3.6 3.9 4.2 ids (a) pout gain ids measured fixtured performance v d = 6 v idq = 2.1 a TGA4905-CP
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 6 package pinout diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4905-CP
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 7 mechanical drawing top view side view 0. 81 53 0.0028/ 0.0 0 24 0.0000 lid substrate stack . 1.8542 .005 dimensions in inches 0.073 +/- 0.005 0.000 0.032 +0.003/-0.002 0. 00 ( 0. 00 0) 1.02 x 1.05 1.02 x 1.05 1.02 x 1.05 2.66 x 0.61 1.02 x 1.03 1.02 x 1.03 1.02 x 1.03 2.03 x 0.57 rf ground through backside bond pad #8 (n/c) bond pad #7 (n/c) bond pad #6 (n/c) bond pad #5 (rf output) bond pad #4 (vd2) bond pad #3 (vd1) bond pad #2 (vg) bond pad #1 (rf input) units: millimeters (inches) tolerance: +/-0.08 (0.003) (0.044 x 0.041) (0.044 x 0.041) (0.044 x 0.041) (0.105 x 0.240) (0.044 x 0.040) (0.044 x 0.040) (0.044 x 0.040) (0.080 x 0.022) 1 2 3 4 5 6 7 8 0.00 (0.000) 0.11 (0.004) 0.64 (0.025) 1.16 (0.046) 1.72 (0.068) 3.16 (0.124) 4.38 (0.172) 4.83 (0.190) 5.24 (0.206) 6.42 (0.253) 7.93 (0.312) 8.47 (0.334) 8.98 (0.353) 9.48 (0.373) 9.65 (0.380) 0.00 (0.000) 0.15 (0.006) 1.73 (0.068) 2.52 (0.099) 3.21 (0.126) 4.14 (0.163) 4.92 (0.193) 6.68 (0.263) 8.46 (0.333) 10.19 (0.401) 11.66 (0.459) 13.20 (0.520) 13.34 (0.525) hole diameter = 1.98 (0.078), 4x TGA4905-CP
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 8 bias schematic TGA4905-CP gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com advance product information february 7, 2006 9 ordering information part package style TGA4905-CP carrier plate TGA4905-CP assembly of a TGA4905-CP into a module manual assembly for prototypes 1. clean the module with acetone. rinse with alcohol and di water. allow the module to fully dry. 2. to improve the thermal and rf performance, triquint recommends attaching a heatsink to the bottom of the package. if the tga4905 is mounted to the heatsink with mounting screws, an indium shim or other compliant material should be inserted between the tga4905 and the heatsink to reduce thermal contact resistance due to air gaps. the tga4905 may also be mounted with diemat dm6030hk conductive epoxy or an equivalent high thermal conductivity epoxy. 3. the dc and rf interconnects may be gold bondwires or gold ribbons. the rf interconnects should be as short as possible. a minimum of two 1 mil wires are recommended for the rf input, rf output, vg, and vd1. six bondwires are recommended for vd2.
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