features trenchfet power mosfets 175 c junction temperature applications automotive ? motor drives ? 12-v systems note book pc adaptors sup40n10-35 vishay siliconix new product document number: 72797 s-40445?rev. a, 15-mar-04 www.vishay.com 1 n-channel 105-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 105 0.035 @ v gs = 10 v 37.5 105 0.038 @ v gs = 6 v 36.0 d g s n-channel mosfet to-220ab top view gd s ordering information: sup40n10-35?e3 absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 105 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 37.5 continuous drain current (t j = 175 c) t c = 125 c i d 21.5 a pulsed drain current i dm 75 a avalanche current i ar 35 repetitive a valanche energy a l = 0.1 mh e ar 61 mj maximum power dissipation a t c = 25 c p d 107 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit jtitabit pcb mount c r 40 junction-to-ambient free air r thja 62.5 c/w junction-to-case (drain) r thjc 1.4 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
sup40n10-35 vishay siliconix new product www.vishay.com 2 document number: 72797 s-40445?rev. a, 15-mar-04 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 105 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 105 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 105 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 105 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 75 a v gs = 10 v, i d = 15 a 0.026 0.035 drain source on state resistance a r ds( ) v gs = 6 v, i d = 10 a 0.028 0.038 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a, t j = 125 c 0.063 v gs = 10 v, i d = 15 a, t j = 175 c 0.077 forward transconductance a g fs v ds = 15 v, i d = 15 a 10 s dynamic b input capacitance c iss 2400 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 270 pf reverse transfer capacitance c rss 90 total gate charge c q g 35 60 gate-source charge c q gs v ds = 50 v, v gs = 10 v, i d = 40 a 11 nc gate-drain charge c q gd ds , gs , d 9 gate resistance r g 1.7 turn-on delay time c t d(on) 11 20 rise time c t r v dd = 50 v, r l = 1.25 12 20 ns turn-off delay time c t d(off) v dd = 50 v , r l = 1 . 25 i d 40 a, v gen = 10 v, r g = 2.5 30 45 ns fall time c t f 12 20 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 37.5 a pulsed current i sm 75 a forward voltage a v sd i f = 30 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 60 100 ns peak reverse recovery current i rm(rec) i f = 30 a, di/dt = 100 a/ s 5 8 a reverse recovery charge q rr 0.15 0.4 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup40n10-35 vishay siliconix new product document number: 72797 s-40445?rev. a, 15-mar-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 600 1200 1800 2400 3000 0 20406080100 0 4 8 12 16 20 0 10203040506070 0 20 40 60 80 100 0 1530456075 0.00 0.02 0.04 0.06 0.08 0 1530456075 0 15 30 45 60 75 0123456 0 15 30 45 60 75 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c t c = 125 c v ds = 50 v i d = 40 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 4 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) c rss 5 v v gs = 6 v
sup40n10-35 vishay siliconix new product www.vishay.com 4 document number: 72797 s-40445?rev. a, 15-mar-04 typical characteristics (25 c unless noted) source-drain diode forward voltage 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 15 a t j = 25 c t j = 150 c 0 105 110 115 120 125 130 135 140 ? 50 ? 25 0 25 50 75 100 125 150 175 drain-source breakdown v oltage vs. junction t emperature t j ? junction temperature ( c) i d = 10 ma t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c 100 1 0.0001 i av (a) @ t a = 25 c avalanche current vs. time drain-source breakdown voltage (v) r ds(on) ? on-resiistance (normalized)
sup40n10-35 vishay siliconix new product document number: 72797 s-40445?rev. a, 15-mar-04 www.vishay.com 5 thermal ratings 0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 1000 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms dc, 100 ms 10 s 100 s single pulse 0.05 0.02 1 100 limited by r ds(on)
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