feb.1999 FS10ASH-06 outline drawing dimensions in mm mp-3 mitsubishi nch power mosfet FS10ASH-06 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. 60 10 10 40 10 10 40 30 C55 ~ +150 C55 ~ +150 0.26 v gs = 0v v ds = 0v l = 100 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 6.5 2.3 2.3 0.9max. 1.0max. 2.3 1.0 0.5 0.1 5.5 0.2 10max. 2.3min. 1.5 0.2 0.5 0.2 0.8 5.0 0.2 a q gate w drain e source r drain wr q qwe r e 2.5v drive v dss .................................................................................. 60v r ds (on) (max) .............................................................. 73m w i d ......................................................................................... 10a integrated fast recovery diode (typ.) ............. 55ns
feb.1999 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet FS10ASH-06 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 60 0.6 0.9 54 64 0.27 18 1150 185 80 19 45 90 65 1.0 55 0.1 0.1 1.2 73 95 0.365 1.5 4.17 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. 0 10 20 30 40 50 0 200 50 100 150 power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 p d = 30w v gs = 5v 4v 3v 2.5v 2v 1.5v tc = 25? pulse test 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 v gs = 5v 4v 3v 2.5v 2v 1.5v tc = 25? pulse test 210 0 357 2 10 1 357 2 10 2 357 2 10 ? 10 0 10 1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 tw = 10 m s t c = 25? single pulse 100 m s 10ms 1ms dc performance curves i d = 1ma, v gs = 0v v gs = 10v, v ds = 0v v ds = 60v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 4v i d = 5a, v gs = 2.5v i d = 5a, v gs = 4v i d = 5a, v ds = 5v v ds = 10v, v gs = 0v, f = 1mhz v dd = 30v, i d = 5a, v gs = 4v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case i s = 10a, dis/dt = C100a/ m s
feb.1999 mitsubishi nch power mosfet FS10ASH-06 high-speed switching use 0 20 40 60 80 100 10 0 357 2 10 1 357 2 10 2 357 23 v gs = 2.5v t c = 25? pulse test 4v 0 8 16 24 32 40 0 1.0 2.0 3.0 4.0 5.0 tc = 25? v ds = 10v pulse test 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25? v ds = 5v pulse test 75? 125? on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 0 0.4 0.8 1.2 1.6 2.0 0 1.0 2.0 3.0 4.0 5.0 tc = 25? pulse test 5a i d = 15a 10a 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 357 2 10 1 357 2 10 2 357 3 2 tch = 25? f = 1mh z v gs = 0v ciss coss crss 10 0 10 1 23457 10 2 23457 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 tch = 25? v dd = 30v v gs = 4v r gen = r gs = 50 w t d(off) t d(on) t f t r
feb.1999 mitsubishi nch power mosfet FS10ASH-06 high-speed switching use 0 1.0 2.0 3.0 4.0 5.0 0 4 8 12 16 20 v ds = 10v tch = 25? i d = 10a 20v 40v 0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0 v gs = 0v pulse test t c = 125? 75? 25? gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 50 100 150 v gs = 4v i d = 1/2i d pulse test 0 0.4 0.8 1.2 1.6 2.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
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