2SK2121 silicon n-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 1 2 3
to-3p 1. gate
2. drain
(flange)
3. source d g s
2SK2121 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 50 a drain peak current i d(pulse) * 1 200 a body to drain diode reverse drain current i dr 50 a avalanche current i ap * 3 50 a avalanche energy e ar * 3 214 mj channel dissipation pch* 2 100 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2SK2121 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.007 0.01 w i d = 25 a v gs = 10 v* 1 0.009 0.016 w i d = 25 a v gs = 4 v* 1 forward transfer admittance |y fs | 4065s i d = 25 a v ds = 10 v* 1 input capacitance ciss 8330 pf v ds = 10 v v gs = 0 f = 1 mhz output capacitance coss 3500 pf reverse transfer capacitance crss 550 pf turn-on delay time t d(on) 50nsi d = 25 a v gs = 10 v r l = 1.2 w rise time t r 270 ns turn-off delay time t d(off) 1400 ns fall time t f 560 ns body to drain diode forward voltage v df 0.95 v i f = 50 a, v gs = 0 body to drain diode reverse recovery time t rr 150 ns i f = 50 a, v gs = 0, dif / dt = 50 a / m s note 1. pulse test
2SK2121 4 160
120
80
40 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d 1000 300 100 30 10 3 1 1 10 100 2 5 20 50 100 ? 10 ? 1 ms pw = 10 ms (1shot) dc operation (tc = 25 ?) operation in
this area is
limited by r ds(on) ta = 25 ? maximum safe operation area 100
80
60
40
20 0 246810 drain to source voltage v (v) ds drain current i (a) d v = 2.5 v gs pulse test 3.5 v 3 v 10 v
6 v
4 v typical output characteristics 50
40
30
20
10 0 12345 gate to source voltage v (v) gs drain current i (a) d ?5 ?
tc = 25 ?
75 ? v = 10 v
pulse test ds typical transfer characteristics
2SK2121 5 1.0
0.8
0.6
0.4
0.2 0246810 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) pulse test i = 50 a d 20 a 10 a drain to source saturation voltage vs.
gate to source voltage drain current i (a) d drain to source on state resistance r ( w ) ds(on) 1 3 10 30 100 300 1000 0.05 0.02 0.01 0.005 0.002 0.001 0.0005 4 v v = 10 v gs pulse test static drain to source state resistance
vs. drain current 0.05
0.04
0.03
0.02
0.01 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w pulse test 10 v 10 a
20 a
50 a v = 4 v gs i = 50 a d 10 a
20 a static drain to source on state resistance
vs. temperature 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 forward transfer admittance |yfs| (s) drain current i (a) d ?5 ? tc = 25 ? 75 ? ds v = 10 v
pulse test forward transfer admittance vs.
drain current
2SK2121 6 5 10 500 200 100 50 20 reverse drain current i (a) dr reverse recovery time trr (ns) 0.1 0.3 1 3 10 30 100 di / dt = 50 a / ?
v = 0, ta = 25 ? gs body?rain diode reverse
recovery time 100000 10000 1000 100 01020304050 capacitance c (pf) drain to source voltage v (v) ds ciss coss crss v = 0
f = 1 mhz gs typical capacitance vs.
drain to source voltage 100
80
60
40
20 0 80 160 240 320 400 gate charge qg (nc) drain to source voltage v (v) ds 20
16
12
8
4 0 gate to source voltage v (v) gs v = 10 v
25 v
50 v dd i = 50 a d v gs ds v v = 10 v
25 v
50 v dd dynamic input characteristics 5000 2000 1000 500 200 100 50 drain current i (a) d switching time t (ns) 0.1 0.3 1 3 10 30 100 v = 10 v, v = 30 v
pw = 5 ?, duty < 1 % gs dd t f r t d(on) t d(off) t switching characteristics
2SK2121 7 100
80
60
40
20 0 0.4 0.8 1.2 1.6 2.0 drain to source voltage v (v) ds pulse test reverse drain current i (a) dr v = 0, ? v gs 10 v 5 v reverse drain current vs.
souece to drain voltage 250
200
150
100
50 channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs.
channel temperature derating 25 50 75 100 125 150 0 i = 50 a
v = 25 v
duty < 0.1 %
rg > 50 w ap dd d. u. t rg i
monitor ap v
monitor ds v dd 50 w vin
?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform
2SK2121 8 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 1.25 ?/w, tc = 25 ? q g q q tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin
10 v r l v
= 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout
monitor 50 w 90% 10% t f switching time test circuit waveform
2SK2121 9 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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