221 west industry court deer park, ny 11729 - 4681 phone (516) 586 - 7600 fax (516) 242 - 9798 world wide web site - http://www.sensitron.com e - mail address - sales@sensitron.com sensitron semiconductor technical data data sheet 303, rev. b formerly part number shd2181/a/b hermetic power mosfet n - channel features: 60 volt, 0.027 ohm, 45a mosfet isolated hermetic metal package fast switc hing low r ds (on) equivalent to irfm054 series maximum ratings all ratings are at t c = 25 c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - 20 volts on - state drain current @ t c = 25 c v gs = 10v @ t c = 100 c i d - - - - 45 35 amps pulsed drain current @ t c = 25 c i dm - - 220 amps operating and storage temperature t op /t stg - 55 - +150 c total device dissip ation @ t c = 25 c p d - - 200 watts electrical characteristics drain to source breakdown voltage v gs = 0v, i d = 1.0ma bv dss 60 - - volts static drain to source on state resistance v gs = 10v, i d = 35a r ds(on) - - 0.027 w gate threshold voltage v ds = v gs , i d = 250 m a v gs(th) 2.0 - 4.0 volts forward transconductance v ds 3 15 v, i ds = 35a g fs 20 - - s(1/ w ) zero gate voltage drain current v ds = 0.8xmax. rating, v gs = 0v v ds = 0.8xmax. rating, v gs = 0v, t j = 125 c i dss - - 25 250 m a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = - 20v i gss - - 100 - 100 na turn on delay time v dd = 30v, rise time i d = 35a, turn off delay time r g = 2.35 w fall time t d(on) t r t d(off) t f - - 33 180 100 100 nsec diode forward voltage t c = 25 c, i s = 35a, v gs = 0v v sd - - 2.5 volts reverse recovery time t j = 25 c, i f = 35a, di/ds 100a/ m sec, v dd 50v t rr - - 280 ns ec input capacitance v gs = 0 v output capacitance v ds = 25 v reverse transfer capacitance f = 1.0mhz c iss c oss c rss - 4600 2000 340 - pf thermal resistance, junction to case r th jc - - 0.6 c/w shd218501 SHD218501A shd218501b
221 west industry court deer park, ny 11729 - 4681 phone (516) 586 - 7600 fax (516) 242 - 9798 world wide web site - http://www.sensitron.com e - mail address - sales@sensitron.com sensitron technical data data sheet 303, rev. b mechanical dimensions: in inches / mm pinout table device type pin 1 pin 2 pin 3 mosfet, surface mount shd - 5, 5a, 5b packag e drain source gate shd218501 SHD218501A shd218501b shd - 5 shd - 5a shd - 5b .370.010 (9.40.254) 2 3 .610.010 (15.5 .254) .030.010 (.762.254) .110 (2.80) max alumina ring terminal 1 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .125.010 (3.17.254) .110 (2.79) max alumina ring .510.020 (12.9.508) .320.010 (8.13.254) .030.010 (.762.254) moly lid moly base terminal 1 .060.010 (1.52.254) .020.002 (.508.051) .020.005 r (.508.127 ) 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .090.010 (2.29.254) .130 (3.30) max alumina ring .520.020 (13.2.508) .320.010 (8.13 .254) .030.010 (.762.254) moly lid moly base terminal 1 .060.010 (1.52.254) .015.002 (.381.051) .020.005 r (.508.127 ) copper terminals
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.
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