? 2001 ixys all rights reserved n-channel enhancement mode avalanche rated, high dv/dt features international standard packages low r ds (on) rated for unclamped inductive load switching (uis) molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density high voltage power mosfets g s to-263 (ixta) g d s to-220 (ixtp) g = gate d = drain s = source tab = drain ixta/ixtp 3n120 ixta/ixtp 3n110 d (tab) d (tab) v dss i d25 r ds(on) 1200 v 3 a 4.5 ? ? ? ? ? 1100 v 3 a 4.0 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 3n120 1200 v 3n110 1100 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 3n120 1200 v 3n110 1100 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c3a i dm t c = 25 c, pulse width limited by t jm 12 a i ar t c = 25 c3a e ar t c = 25 c 20mj e as 700 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 150 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 2 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 3n120 1200 v 3n110 1100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 3n120 4.5 ? note 1 3n110 4.0 ? preliminary data sheet 98844a (11/01)
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixta/ixtp 3n120 ixta/ixtp 3n110 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , note 1 1.5 2.2 s c iss 1050 1300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 100 125 pf c rss 25 50 pf t d(on) 17 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 15 ns t d(off) r g = 4.7 ? (external), 32 n s t f 18 ns q g(on) 39 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 9nc q gd 22 nc r thjc 0.8 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 3 a i sm repetitive; pulse width limited by t jm 12 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 700 n s to-263 (ixta) outline 1. gate 2. drain 3. source 4. drain bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79.080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.292.79.090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - drain 3 - source 4 - drain bottom side to-220 (ixtp) outline notes: 1. pulse test, t 300 s, duty cycle d 2 %
? 2001 ixys all rights reserved v gs - volts 3.5 4.0 4.5 5.0 5.5 6.0 i d - amperes 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.3 1.6 1.9 2.2 2.5 2.8 i d =1.5a i d - amperes 012345 r ds(on) - normalized 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 v ds - volts 0 3 6 9 12 15 18 21 24 27 30 i d - amperes 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts 0 2 4 6 8 101214161820 i d - amperes 0 1 2 3 4 5 v gs = 10v t j = 125 o c t j = 25 o c 4v 4v 5v t j = 25 o c i d = 3a t j = 125 o c v gs = 9v 8v 7v 6v t j = 125 o c 5v v gs = 9v 8v 7v 6v t j = 25 o c v gs = 10v ixt_3n110 ixt_3n120 ixta/ixtp 3n120 ixta/ixtp 3n110 fig.1 output characteristics @ t j = 25c fig. 2 output characteristics @ t j = 125c fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance fig. 5 drain current vs. case temperature fig. 6 drain current vs gate source voltage
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixta/ixtp 3n120 ixta/ixtp 3n110 v sd - volts 0.2 0.4 0.6 0.8 1.0 i d - amperes 0 1 2 3 4 5 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.00 0.01 0.10 1.00 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 gate charge - nc 0 102030405060 v gs - volts 0 2 4 6 8 10 12 crss coss ciss v ds = 600v i d = 1.5a f = 1mhz t j = 125 o c t j = 25 o c v gs = 0v single pulse fig. 7 gate charge characteristic curve fig. 8 capacitance curves fig. 9 drain current vs drain to source voltage fig.10 transient thermal impedance
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