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description the HSDL-3002 is a small form factor single enhanced infrared (ir) transceiver module that provides the combination of (1) interface between logic and ir signals for through-air, serial, half-duplex ir data link, and (2) ir remote control transmission operating at 940 nm for universal remote control applications. for infrared data communication, the HSDL-3002 provides the flexibility of low power sir applications and remote control applications depending on the application circuit designs as outlined in the application circuit section. the transceiver is compliant to irda physical layer specifications version 1.4 from 9.6 kbit/s to 115.2 kbit/s and it is iec 825-class 1 eye safe. the HSDL-3002 can be shutdown completely to achieve very low power consumption. in the shutdown mode, the pin diode will be inactive and thus producing very little photocurrent even under very bright ambient light. such features are ideal for battery operated handheld products. features guaranteed temperature performance, ?0 to 70 c ?critical parameters are guaranteed over temperature and supply voltage low power consumption small module size ?height: 2.70 mm ?width: 9.10 mm ?depth: 3.65 mm withstands >100 mv p-p power supply ripple typically ? cc supply 2.7 to 5.5 volts integrated emi shield designed to accommodate light loss with cosmetic windows iec 825-class 1 eye safe irda data features fully compliant to irda physical layer specifications version 1.4 from 9.6 kbit/s to 115.2 kbit/s ?excellent nose-to-nose operation ?link distance up to 50 cm complete shutdown for txd(irda), rxd(irda), and pin diode low shutdown current (10 na typical) led stuck-high protection remote control features high radiant intensity spectrally suited to remote control receiver typical link distance at 6 m applications mobile data communication and universal remote control ?pdas ?mobile phone HSDL-3002 irda?data compliant low power 115.2 kbit/s with remote control transmission infrared transceiver data sheet
2 ordering information part number packaging type package quantity HSDL-3002-007 tape and reel front view 2500 application support information the application engineering group is available to assist you with the application designs associated with the HSDL-3002 infrared transceiver module. you can contact them through your local sales representatives for additional details. figure 1. functional block diagram of HSDL-3002. figure 2. rear view diagram with pin-out. 87654321 rear view v cc leda (1) r1 v cc transmitter HSDL-3002 cx1 txd (irda) (3) shield sd (5) nc (7) cx2 receiver rxd (irda) (4) v (rc) (2) irda txd r2 remote control input (rci) v cc (6) gnd (8) marketing information the unit is marked with a number 1 and ywwll on the shield for front option. y = year ww = work week ll = lot information
3 recommended application circuit components component recommended value r1 [1] 2.2 ? 5%, 0.25 watt for 2.7 v cc 3.3 v 2.7 ? 5%, 0.25 watt for 3.0 v cc 3.6 v 6.8 ? 5%, 0.25 watt for 4.5 v cc 5.5 v r2 0 ? , 0.25 watt for 4.5 v cc 5.5 v cx1 [2] 0.47 f 20%, x7r ceramic cx2 [3] 6.8 f 20%, tantalum q1 n-channel logic level mosfet (philip? bsh103) with less than 1 ? ?n?resistance notes: 1. r1 is used to optimize the performance of the 870 nm led, while r2 is the current limiting resistor for the 940 nm rc led. 2. cx1 must be placed within 0.7 cm of HSDL-3002 to obtain optimum noise immunity. 3. in environment with noisy power supplies, supply rejection can be enhanced by including cx2 as shown in figure 1. i/o pins configuration table pin symbol i/o description notes 1 led a i ir and remote control tied through external resistor, r1, led anode to regulate v cc from 2.7 to 5.5 volt 2 v(rc) i remote control led cathode connected to an external switching transistor. do not float the input pin of the swithcing transistor. 3 txd (irda) i irda transmitter data input. logic high turns on the led. if held high longer than active high ~50 s, the led is turned off. txd (irda) must be driven either high or low. do not leave the pin floating. 4 rxd (irda) o irda receiver data output. output is at low pulse response when light pulse is seen. active low 5 sd i shutdown. active high complete shutdown txd(irda), rxd(irda), and pin diode 6v cc i supply voltage regulated, 2.7 to 5.5 volt 7 nc - no internal connection 8 gnd i connect to system ground connect to system ground - shield - emi shield connect to system ground via a low inductance trace. for best performance, do not connect to gnd directly at the part.
4 absolute maximum ratings for implementations where case to ambient thermal resistance is 50 c/w. parameter symbol min. max. units conditions storage temperature t s ?0 100 c operating temperature t a ?0 70 c led supply voltage v led 07 v supply voltage v cc 07 v output voltage: rxd v o ?.5 7 v led current pulse amplitude iled 500 ma 90 s pulse width 20% duty cycle recommended operating conditions parameter symbol min. max. units conditions operating temperature t a ?0 70 c supply voltage v cc 2.7 5.5 v logic input voltage for txd logic high v ih 2/3 v cc v cc v logic low v il 0 1/3 v cc v receiver input irradiance logic high ei h 0.0081 500 mw/cm 2 for in-band signals 115.2 kbps [7] logic low ei l 0.3 mw/cm 2 for in-band signals [7] txd pulse width (sir) t tpw (sir) 1.5 1.6 st pw (txd) = 1.6 s at 115.2 kbps receiver data rate 9.6 115.2 kbps transceiver i/o truth table inputs outputs transceiver mode shutdown irda (txd) remote control input ei ir led rc led rxd active 0 0 0 high [4] off off low [5] active 0 0 0 low off off high active 0 0 1 x off on not valid active 0 1 0 x on off not valid active 0 1 1 x on on not valid shutdown 1 x [6] x [6] low not valid not valid not valid x = don? care ei = in-band infrared intensity at detector notes: 4. in-band ei 115.2 kb/s. 5. logic low is a pulsed response. the condition is maintained for duration dependent on the pattern and strength of the incide nt intensity. 6. to maintain low shutdown current, txd need to be driven high or low and not left floating. the remote control input should b e tied low. caution: the bicmos inherent to this design of this component increases the component? susceptibility to damage from electrostatic discharge (esd). it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation, which may be induced by esd.
5 electrical & optical specifications specifications (min. & max. values) hold over the recommended operating conditions unless otherwise noted. unspecified test conditions may be anywhere in their operating range. all typical values (typ.) are at 25 c with v cc set to 3.0 v unless otherwise noted. parameter symbol min. typ. max. units conditions receiver viewing angle 2 1/2 30 peak sensitivity wavelength p 875 nm rxd output voltage logic high v oh v cc -0.2 v cc vi oh =-200 a, ei 0.3 w/cm 2 logic low v ol 0 0.4 v rxd pulse width (sir) [8] t rpw (sir) 1 7.5 s 1/2 15 , c l = 9 pf rxd rise and fall times t r , t f 25 100 ns c l = 9 pf receiver latency time [9] t l 25 50 s ei = 4 w/cm 2 receiver wake up time [10] t rw 18 100 s ei = 10 mw/cm 2 ir transmitter ir radiant intensity ie h 10 40 mw/sr i leda = 350 ma, 1/2 15 , txd v ih . t a = 25 c, v(rci) v il ir viewing angle 2 1/2 30 60 ir peak wavelength p 875 nm txd logic levels high v ih 2/3 v cc v cc v low v il 0 1/3 v cc v txd input current high i h 0.02 1 av i v ih low i l ? -0.02 1 a0 v i v il led current shutdown i vled 20 1000 na v i (sd) v ih, t a = 25 c wakeup time [11] t tw 30 100 ns maximum optical pw [12] t pw(max )2550 s txd rise and fall time (optical) t r , t f 600 ns led anode on state voltage v on (leda) 2.2 v i leda = 350 ma, v i (txd) v ih , v(rci) v il rc transmitter remote control (rc) ie h 5 20 mw/sr i leda = 400 ma, 1/2 15 , radiant intensity [13] txd v il , t a = 25 c, v(rci) v ih rc viewing angle 2 1/2 30 60 rc peak wavelength p 940 nm transceiver input current high i h 0.01 1 av i v ih low i l ? ?.02 1 a0 v i v il supply current shutdown i cc1 0.01 1 av sd v cc - 0.5; t a = 25 c idle i cc2 290 450 av i (txd) v il , ei = 0 active i cc3 28 mav i (txd) v il
6 v leda (volts) i led (ma) 0 1.0 1.5 v leda vs. i led for the 940 nm led temperature = 25? 2.5 2.0 0.5 50 150 250 450 350 550 650 radiant intensity (mw/sr) 45 i led (ma) 0 10 50 35 20 15 40 i led vs. radiant intensity (mw/sr) of the 940 nm led temperature = 25 c 30 150 250 450 25 5 350 550 650 v leda (volts) 2.5 i led (ma) 1.5 1.6 2.2 2.0 1.8 1.7 2.1 v leda vs. i led for 870 nm led temperature = 25 c 1.9 50 100 150 550 200 250 300 350 400 450 500 2.3 2.4 radiant intensity (mw/sr) 70 i led (ma) 0 10 60 50 40 30 20 50 i led vs. radiant intensity (mw/sr) for the 870 nm led temperature = 25 c 100 150 550 200 250 300 350 400 450 500 notes: 7. an in-band optical signal is a pulse/sequence where the peak wavelength, p , is defined as 850 nm p 900 nm, and the pulse characteristics are compliant with the irda serial infrared physical layer link specification. 8. for in band signals 2.4 kbps to 115.2 kbps where 3.6 w/cm 2 ei 500 mw/cm 2 . 9. latency is defined as the time from the last txd light output pulse until the receiver has recovered full sensitivity. 10. receiver wake up time is measured from v cc power on to valid rxd output. 11. transmitter wake up time is measured from v cc power on to valid light output in response to a txd pulse. 12. the optical pw is defined as the maximum time which the led will turn on, this is to prevent the long turn on time for the l ed. 13. the v ih and v il , when used in reference with rci, depend on the switching transistor used and should obtain from the transistor datasheet. figure 3. ir lop vs. i led . figure 4. ir v led vs. i led . figure 5. rc lop vs. i led . figure 6. rc v led vs. i led .
7 figure 9. txd ?tuck on?protection. figure 10. receiver wakeup time definition. figure 11. transmitter wakeup time definition. figure 8. led optical waveform. figure 7. rxd output waveform. t f v oh 90% 50% 10% v ol t pw t r t f led off 90% 50% 10% led on t pw t r t pw (max.) txd led rx light t rw rxd sd tx light t tw txd sd
8 0.50 all dimensions in millimeters (mm). 0.65 pitch 1.00 3.65 2.95 9.10 0.15 5.80 1.25 1.55 1.35 2.70 0.15 dimension tolerance is 0.2 mm unless otherwise specified. 123456 2.60 2.65 0.80 0.885 78 4.55 mounting center r 1.10 r 1.50 coplanarity: +0.05 to -0.15 HSDL-3002 package outline (with integrated shield) figure 12. package outline dimension.
9 HSDL-3002 tape and reel dimensions figure 13. tape and reel dimensions. 16.40 + 2.00 0 b c 2.00 0.50 3.46 8.00 0.10 4.00 0.10 16.00 0.30 1.75 0.10 1.55 0.05 0.40 0.10 3.00 0.10 polarity parts mounted leader (400 mm min.) empty (40 mm min.) 1.13 0.10 progressive direction "b" "c" quantity pin 8: gnd pin 1: vled +0.10 0 3.30 +0.10 0 7.50 0.10 r 1.00 2.00 0.50 dia. 13.00 0.50 21.00 0.80 label detail a detail a 330 80 2500 9.50 0.10 5.00 (max.) 3.40 0.20 4.20 0.20 8.00 (max.) material of carrier tape: conductive polystyrene material of cover tape: pvc method of cover: heat activated adhesive unit: mm empty (40 mm min.)
10 all HSDL-3002 options are shipped in moisture proof package. once opened, moisture absorption begins. this part is compliant to jedec level 4. moisture proof packaging baking conditions if the parts are not stored in dry conditions, they must be baked before reflow to prevent damage to the parts. package temp. time in reels 60 c 48 hours in bulk 100 c 4 hours 125 c 2 hours 150 c 1 hour baking should only be done once. recommended storage conditions storage 10 c to 30 c temperature relative below 60% rh humidity units in a sealed moisture-proof package package is opened (unsealed) environment less than 25 c, and less than 60% rh? package is opened more than 72 hours perform recommended baking conditions no baking is necessary yes no yes no time from unsealing to soldering after removal from the bag, the parts should be soldered within three days if stored at the recom- mended storage conditions. figure 14. baking conditions chart.
11 process zone symbol ? t maximum dt/dtime heat up p1, r1 25 c to 125 c4 c/s solder paste dry p2, r2 125 c to 170 c 0.5 c/s solder reflow p3, r3 170 c to 230 c (245 c at 10 seconds max.) 4 c/s p3, r4 230 c to 170 c4 c/s cool down p4, r5 170 c to 25 c3 c/s the reflow profile is a straight- line representation of a nominal temperature profile for a convective reflow solder process. the temperature profile is divided into four process zones, each with different ? t/ ? time tempera- ture change rates. the ? t/ ? time rates are detailed in the above table. the temperatures are measured at the component to printed circuit board connections. in process zone p1 , the pc board and hsdl-3602 castella- tion i/o pins are heated to a temperature of 125 c to activate the flux in the solder paste. the temperature ramp up rate, r1, is limited to 4 c per second to allow for even heating of both the pc board and hsdl-3602 castellation i/o pins. process zone p2 should be of sufficient time duration (>60 seconds) to dry the solder paste. the temperature is raised to a level just below the liquidus point of the solder, usually 170 c (338 f). process zone p3 is the solder reflow zone. in zone p3, the temperature is quickly raised above the liquidus point of solder to 230 c (446 f) for optimum results. the dwell time above the liquidus point of solder should be between 15 and 90 seconds. it usually takes about 15 seconds to assure proper coalescing of the solder balls into liquid solder and the formation of good solder connections. beyond a dwell time of 90 seconds, the intermetallic growth within the solder connections becomes excessive, resulting in the formation of weak and unreliable connections. the temperature is then rapidly reduced to a point below the solidus temperature of the solder, usually 170 c (338 f), to allow the solder within the connections to freeze solid. process zone p4 is the cool down after solder freeze. the cool down rate, r5, from the liquidus point of the solder to 25 c (77 f) should not exceed -3 c per second maximum. this limitation is necessary to allow the pc board and hsdl-3602 castellation i/o pins to change dimensions evenly, putting minimal stresses on the hsdl- 3602 transceiver. reflow profile figure 15. reflow graph. 0 t-time (seconds) t temperature ( c) 200 170 125 100 50 50 150 100 200 250 300 150 183 230 p1 heat up p2 solder paste dry p3 solder reflow p4 cool down 25 r1 r2 r3 r4 r5 90 sec. max. above 183 c max. 245 c
12 appendix a : smt assembly application note 1.0 solder pad, mask and metal stencil figure 16. stencil and pcba. 1.1 recommended land pattern figure 17. land pattern. metal stencil for solder paste printing land pattern pcba stencil aperture solder mask 1.20 0.725 87 4321 1.00 0.65 3.05 1.10 2.30 0.50 2.65 5 6 0.715 1.175 mounting center
13 1.3 adjacent land keepout and solder mask areas adjacent land keep-out is the maximum space occupied by the unit relative to the land pattern. there should be no other smd components within this area. the minimum solder resist strip width required to avoid solder bridging adjacent pads is 0.2 mm. it is recommended that two fiducial crosses be placed at mid- length of the pads for unit alignment. note: wet/liquid photo- imageable solder resist/mask is recommended. figure 19. adjacent land keepout and solder mask areas. 1.2 recommended metal solder stencil aperture it is recommended that only a 0.152 mm (0.006 inches) or a 0.127 mm (0.005 inches) thick stencil be used for solder paste printing. this is to ensure adequate printed solder paste volume and no shorting. see the table below the drawing for combinations of metal stencil aperture and metal stencil thickness that should be used. aperture opening for shield pad is 3.05 mm x 1.1 mm as per land pattern. figure 18. solder stencil aperture. aperture size(mm) stencil thickness, t (mm) length, l width, w 0.152 mm 2.60 0.05 0.55 0.05 0.127 mm 3.00 0.05 0.55 0.05 apertures as per land dimensions l w t 0.2 3.2 10.1 3.85 solder mask units: mm
14 appendix b : pcb layout suggestion the following shows an example of a pcb layout that would result in good electrical and emi perfor- mance. things to note: 1. the ground plane should be continuous under the part, but should not extend under the shield trace. 2. the shield trace is a wide, low inductance trace back to the system ground. 3. the agnd pin should be con- nected to the ground plane and not to the shield tab. 4. c1 and c2 are optional supply filter capacitors; they may be left out if a clean power supply is used. 5. v led can be connected to either unfiltered or unregu- lated power supply. if v led and v cc share the same power supply and c1 is used, the connection should be before the current limiting resistor r2. in a noisy environment, supply rejection can be en- hanced by including c2 as well. the layout corresponds to the following application circuit diagram. r2 is the current limiting resistor, while r1 is a weak pull down resistor for the input of the switching transistor. do not float the input of the switching mosfet. the dip switch is used to select between driving the 875 nm or 940 nm led. figure 20. pcb layout suggestion. top view bottom view v cc v cc transmitter cx1 rxd cx2 receiver gnd nc sd rc r1 q1 txd r2 dip switch
15 transceiver mod/ de-modulator speaker rf interface audio interface user interface microcontroller dsp core asic controller ir microphone mobile phone platform rc HSDL-3002 appendix c : general application guide for the HSDL-3002 infrared irda compliant 115.2 kb/s transceiver description the HSDL-3002, a wide voltage operating range infrared transceiver is a low-cost and small form factor device that is designed to address the mobile minimum peak recommended r1 v cc intensity pulse led current conditions 2.2 ? 3.0 v 40 mw/sr 350 ma turn on 870 nm led only txd v ih , v(rc) v il 20 mw/sr 400 ma turn on 940 nm led only txd v il , v(rc) v ih the resistor value chosen above is for optimal irda operation. for optimized remote control performance, it is recommended to turn on both the 870 nm and 940 nm leds. moreover, separate power control feature can be incorporated for remote control operation by implement- ing device as shown in figure 3. computing market such as pdas, as well as small embedded mobile products such as digital cameras and cellular phones. it also includes a 940 nm led to support universal remote control applications. it is fully compliant to irda 1.4 low power specifica- tion from 9.6 kb/s to 115.2 kb/s, and supports most remote control codes. the design of the hsdl- 3002 also includes the following unique features: ? an additional spectrally suited 940 nm led ? low passive component count. ? shutdown mode for low power consumption requirement. selection of resistor r1 resistor r1 should be selected to provide the appropriate peak pulse led current over different ranges of v cc as shown in the table below. interface to recommended i/o chips the HSDL-3002s txd data input is buffered to allow for cmos drive levels. no peaking circuit or capacitor is required. data rate from 9.6 kb/s up to 115.2 kb/s is available at the rxd pin. the v(rc), pin 2, in conjunction with txd (irda), pin 3, can be used to send remote control codes. pin 2 is driven through a switching fet transistor with a very low on- resistance capable of driving 400 ma of current for remote control operation. the block diagram below shows how the irda port fits into a mobile phone and pda platform. figure 21. ir layout in mobile phone platform.
16 the link distance testing was done using typical HSDL-3002 units with national semi- conductors pc87109 3 v super i/o controller and smcs fdc37c669 and fdc37n769 super i/o controllers. an irda link distance of up to 100 cm was demonstrated. remote control operation HSDL-3002 comes with an additional spectrally suited 940 nm led for remote control applications. remote control applications are not governed by any standards, owing to which there are numerous remote control codes in the market. each of these standards results in receiver modules with different sensitivities, depending on the carrier frequencies and responsivity to the incident light wavelength. pcmcia controller cpu for embedded application ir ram rom touch panel rs232c driver com port pda platform lcd panel rc HSDL-3002 based on a survey of some commonly used remote control receiver modules, the irradiance is found to be in the range of 0.05~0.07 w/cm 2 . based on a typical irradiance of 0.075 w/ cm 2 and turning on both 870 nm and 940 nm leds, a typical link distance of 6 m is achieved. for a more exhaustive note on implementing remote control using HSDL-3002, please refer to the application note. figure 22. ir layout in pda platform.
17 appendix d : window designs for HSDL-3002 optical port dimensions for HSDL-3002 to ensure irda compliance, some constraints on the height and width of the window exist. the minimum dimensions ensure that the irda cone angles are met without vignetting. the maximum dimensions minimize the effects of stray light. the minimum size corresponds to a cone angle of 30 and the maximum size corresponds to a cone angle of 60 . in the figure below, x is the width of the window, y is the height of the window and z is the distance from the HSDL-3002 to the back of the window. the distance from the center of the led lens to the center of the photodiode lens, k, is 5.8 mm. the equations for computing the window dimensions are as follows: x = k + 2*(z+d)*tana y = 2*(z+d)*tana the above equations assume that the thickness of the window is negligible compared to the distance of the module from the back of the window (z). if they are comparable, z' replaces z in the above equation. z' is defined as z' = z+t/n where t is the thickness of the window and n is the refractive index of the window material. the depth of the led image inside the HSDL-3002, d, is 8.6 mm. a is the required half angle for viewing. for irda compliance, the minimum is 15 and the maximum is 30 . assuming the thickness of the window to be negligible, the equations result in the following tables and graphs: figure 23. window design diagram. d z k a ir transparent window opaque material opaque material ir transparent window x y
figure 24. aperture width (x) vs. module depth. figure 25. aperture height (y) vs. module depth. window material almost any plastic material will work as a window material. polycarbonate is recommended. the surface finish of the plastic should be smooth, without any recommended plastic materials material # light transmission haze refractive index lexan 141l 88% 1% 1.586 lexan 920a 85% 1% 1.586 lexan 940a 85% 1% 1.586 note: 920a and 940a are more flame retardant than 141l. recommended dye: violet #21051 (ir transmissant above 625 nm) aperture width (x, mm) aperture height (y, mm) module depth (z) mm max. min. max. min. 0 15.73 10.41 9.93 4.61 1 16.89 10.94 11.09 5.14 2 18.04 11.48 12.24 5.68 3 19.19 12.02 13.39 6.22 4 20.35 12.55 14.55 6.75 5 21.5 13.09 15.7 7.29 6 22.66 13.62 16.86 7.82 7 23.81 14.16 18.01 8.36 8 24.97 14.7 19.17 8.90 9 26.12 15.23 20.32 9.43 aperture width (x) mm 30 module depth (z) mm 10 47 0 09 15 26 20 5 135 8 aperture width (x) vs. module depth x max. x min. 25 aperture height (y) mm 25 module depth (z) mm 20 47 0 09 26 10 135 8 aperture height (y) vs. module depth 15 5 y max. y min. texture. an ir filter dye may be used in the window to make it look black to the eye, but the total optical loss of the window should be 10% or less for best optical performance. light loss should be measured at 875 nm. the recommended plastic materials for use as a cosmetic window are available from general electric plastics.
curved front and back (second choice) curved front, flat back (do not use) figure 26. shape of windows. shape of the window from an optics standpoint, the window should be flat. this ensures that the window will not alter either the radiation pattern of the led, or the receive pattern of the photodiode. if the window must be curved for mechanical or industrial design reasons, place the same curve on the back side of the window that has an identical radius as the front side. while this will not completely eliminate the lens effect of the front curved surface, it will significantly reduce the effects. the amount of change in the radiation pattern is dependent flat window (first choice) upon the material chosen for the window, the radius of the front and back curves, and the distance from the back surface to the transceiver. once these items are known, a lens design can be made which will eliminate the effect of the front surface curve. the following drawings show the effects of a curved window on the radiation pattern. in all cases, the center thickness of the window is 1.5 mm, the window is made of polycarbonate plastic, and the distance from the transceiver to the back surface of the window is 3 mm.
for product information and a complete list of distributors, please go to our website: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ?2006 avago technologies pte. all rights reserved. obsoletes 5988-7424en 5988-4165en may 27, 2006

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