pb lead-free parts round type led lamps a 12 - oct. doc. no : qw0905- rev. : date : - 2007 L8SEF3330-PF ligitek electronics co.,ltd. property of ligitek only L8SEF3330-PF data sheet
- + 5.9 5.0 7.6 25.0min 1.0min 0.5 typ 2.54typ 1.5 max 8.6 directivity radiation note : 1.all dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. package dimensions ligitek electronics co.,ltd. property of ligitek only part no. L8SEF3330-PF page 1/5
static electricity or power surge will damage the led. use of a conductive wrist band or anti-electrosatic glove is recommended when handing these led. all devices, equipment and machinery must be properly grounded. * orange diffused typical electrical & optical characteristics (ta=25 " ) symbol esd t opr tstg i f pd i fp absolute maximum ratings at ta=25 " note : 1.the forward voltage data did not including ! 0.1v testing tolerance. 2. the luminous intensity data did not including ! 15% testing tolerance. color lens algainp material L8SEF3330-PF part no orange emitted peak forward current duty 1/10@10khz forward current electrostatic discharge( * ) operating temperature reverse current @5v storage temperature power dissipation parameter 1500 luminous intensity @20ma(mcd) typ. 17 spectral halfwidth #$ nm dominant wave length $ dnm 2.6 max. forward voltage @ ma(v) 1.7 typ. 20 900 min. viewing angle 2 % 1/2 (deg) 24 ligitek electronics co.,ltd. property of ligitek only 25 ir 10 2000 65 60 ratings 8sef & a " " v mw ma ma unit page2/5 -40 ~ +85 -40 ~ +100 605 L8SEF3330-PF part no.
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0 10 20 1.0101001000 0.0 1.0 2.0 3.0 -200204060 1.0 1.1 1.2 2.03.0 80 0.8 0.9 -20 40 20 080 60 2.0 0.0 0.5 1.0 1.5 2.5 page 3/5 typical electro-optical characteristics curve 8sef chip 1.0 r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) 500 0.0 0.5 550 600 650 0.51.52.5 0 30 50 40 60 part no. L8SEF3330-PF
dip soldering preheat: 120 c max preheat time: 120seconds max ramp-up 2 c/sec(max) ramp-down:-5 c/sec(max) solder bath:260 c max dipping time:3 seconds max distance:2mm min(from solder joint to body) note:1.wave solder should not be made more than one time. 2.you can just only select one of the soldering conditions as above. 0 preheat 0 100 25 2 /sec max 200 time(sec) 250 temp( c) 260 5 /sec max 260 c3sec max soldering condition(pb-free) 1.iron: soldering iron:30w max temperature 350 c max soldering time:3 seconds max(one time only) distance:2mm min(from solder joint to body) 2.wave soldering profile ligitek electronics co.,ltd. property of ligitek only page 4/5 part no. L8SEF3330-PF 120 seconds max
the purpose of this test is the resistance of the device under tropical for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. this test intended to see soldering well performed or not. this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. 1.t.sol=230 5 2.dwell time=5 1sec solderability test 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.t.sol=260 5 2.dwell time= 10 1sec. solder resistance test thermal shock test 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs high temperature high humidity test mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 description the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. ligitek electronics co.,ltd. property of ligitek only 1.under room temperature 2.if=20ma 3.t=1000 hrs (-24hrs, +72hrs) operating life test 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) low temperature storage test 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) high temperature storage test reliability test: test condition test item page 5/5 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 jis c 7021: b-12 mil-std-883:1008 jis c 7021: b-10 reference standard part no. L8SEF3330-PF
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