d a t a sh eet product speci?cation supersedes data of 1996 july 18 file under discrete semiconductors, sc05 1996 sep 04 discrete semiconductors BFQ221 npn video transistor
1996 sep 04 2 philips semiconductors product speci?cation npn video transistor BFQ221 applications primarily intended for buffer stages in high resolution colour monitors. description npn silicon transistor encapsulated in a 3-lead plastic sot54 package. pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline sot54. 1 3 2 msb033 quick reference data limiting values in accordance with the absolute maximum rating system (iec 134). note 1. t s is the temperature at the soldering point of the collector pin. symbol parameter conditions typ max unit v cbo collector-base voltage open emitter - 100 v i c collector current (dc) - 100 ma p tot total power dissipation up to t s =60 c - 1.15 w f t transition frequency i c = 25 ma; v ce =10v 1 - ghz c re feedback capacitance i c = 0; v cb =10v 1.7 - pf t j junction temperature - 150 c symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 100 v v cer collector-emitter voltage r be = 100 w- 95 v v ebo emitter-base voltage open collector - 3v i c collector current (dc) see fig.2 - 100 ma i c(av) average collector current see fig.2 - 100 ma p tot total power dissipation up to t s =60 c; note 1; see fig.3 - 1.15 w t stg storage temperature - 65 +150 c t j junction temperature - 150 c
1996 sep 04 3 philips semiconductors product speci?cation npn video transistor BFQ221 handbook, halfpage mbg476 10 2 10 10 2 10 3 10 3 10 1 v ce (v) i c
(ma) fig.2 dc soar. handbook, halfpage 0 1.2 0.8 p tot
(w) 0.4 0 50 100 150 t s ( o c) mbg477 fig.3 power derating curve. thermal characteristics note 1. t s is the temperature of the soldering point of the collector pin. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point p tot = 1.15 w; up to t s =60 c; note 1 78 k/w symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c = 0.1 ma; i e = 0 100 -- v v (br)cer collector-emitter breakdown voltage i c = 1 ma; r be = 100 w 95 -- v v (br)ebo emitter-base breakdown voltage i c = 0; i e = 0.1 ma 3 -- v i ces collector-emitter leakage current v ce = 50 v; v be =0 -- 100 m a h fe dc current gain i c = 25 ma; v ce =10v; see fig.4 20 -- f t transition frequency i c = 25 ma; v ce =10v; f = 500 mhz; see fig.5 - 1 - ghz c re feedback capacitance i c = 0; v cb = 10 v; f = 1 mhz; see fig.6 - 1.7 - pf
1996 sep 04 4 philips semiconductors product speci?cation npn video transistor BFQ221 handbook, halfpage 0 20 100 h fe 60 20 0 40 mbg478 40 60 80 i c (ma) fig.4 dc current gain as a function of collector current; typical values. v ce = 10 v; t p = 500 m s. handbook, halfpage 0 0.4 0.8 1.2 10 2 mbg479 10 i c (ma) 20 50 f t
(mhz) fig.5 transition frequency as a function of collector current; typical values. v ce = 10 v; f = 500 mhz. handbook, halfpage 02 10 c re
(pf) 3 1 0 2 4 mbg480 46 8 v cb (v) fig.6 feedback capacitance as a function of collector-base voltage; typical values. f = 1 mhz.
1996 sep 04 5 philips semiconductors product speci?cation npn video transistor BFQ221 package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. fig.7 sot54. dimensions in mm. a ndbook, full pagewidth mbc014 - 1 2.54 4.8
max 4.2 max 1.7
1.4 0.66
0.56 1 2 3 5.2 max 12.7 min 2.0 max (1) 0.48
0.40 0.40
min
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