optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 1 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. applications: ? non-contact reflecti ve object sensor ? assembly line automation ? machine automation ? machine safety ? end of travel sensor ? door sensor ? mark detection ? office equipment ? gaming equipment features: ? phototransistor output ? high sensitivity ? low-cost plastic housing ? available with lenses for dust protection and ambient light filtration ? focused for maximum sensitivity description: the opb703 , opb704 and opb705 consist of an infrared (890nm) light emitting diode (led) and a npn silicon phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for pcboard mounting. the OPB703Wz , opb704wz, opb705wz and opb70bwz are designed for remote mounting utilizing interconnect wires of ul approved 26 awg, 24? (61.0cm) minimum length, stripped and tinned. the opb70awz consists of an infrared (890nm) light emitting diode (led) and a npn silicon photodarlington, mounted side-by-side on converging optical axes in a black plastic housing and is designed for remote mounting utilizing interconnect wires of ul approved 26 awg, 24? (61.0cm) minimum length, stripped and tinned. the opb70cwz through opb70fwz consist of a visible (red 640nm) light emitting diode (led) and a npn silicon phototransistor or rbe phototransistor, mounted side-by-s ide on converging optical axes in a black plastic housing and are designed for remote mounting utilizing interconnect wires of ul approved 26 awg, 24? (61.0cm) minimum length, stripped and tinned. various lens options are available: no lens for the (opb703, OPB703Wz) , blue window for dust protection for the (opb704, opb704wz, opb70bwz) and aperture lens for improved resolution for the (opb705, opb705wz, opb70awz, opb70cwz and opb70dwz) . the opb704g and opb704gwz offers excellent protection for dirty environments. the phototransistor responds to illumination from the emitter when a reflective object passes within the field of view centered typically at 0.15? (3.8 mm). custom electrical, wire, cabling and connectors are available. contact your local representative or optek for more information. wz version ordering information part led peak detector optical cover lead or wire opb703 890 nm transistor none 0.160" leads OPB703Wz 24" / 26 awg wire opb704 0.160" leads opb704wz 24" / 26 awg wire opb704g 0.160" leads opb704gwz 24" / 26 awg wire opb705 aperture 0.160" leads opb705wz 24" / 26 awg wire opb70awz darlington opb70bwz rbe transistor blue window opb70cwz 640 nm rbe transistor aperture opb70dwz transistor opb70ewz rbe transistor clear window opb70fwz transistor blue window rohs
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 2 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. OPB703Wz, opb704wz, opb705wz, opb70dwz opb703, opb704, opb705 1 4 2 3 opb703, opb704, opb705 OPB703Wz, opb704wz, opb705wz, opb70awz, opb70bwz, opb70cwz, opb70dwz opb703 opb704 opb705 OPB703Wz opb704wz opb705wz opb70bwz opb70awz opb70ewz opb70cwz opb70fwz opb70dwz anode collector cathode emitter opb70bwz, opb70cwz opb70ewz anode collector cathode emitter opb70awz anode collector emitter cathode
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 3 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. opb704g opb704gwz
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 4 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. absolute maximum ratings (t a =25c unless otherwise noted) storage temperature range -40c to +80 c lead soldering temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240 c (1) input diode forward dc current 40 ma reverse dc voltage 2 v power dissipation 100 mw (2) output photodetector collector-emitter voltage phototransistor photodarlington 30 v 15 v emitter-collector voltage 5 v power dissipation 100 mw (2) collector dc current 25 ma notes: (1) rma flux is recommended. duration can be extend ed to 10 seconds maximum when flow soldering. (2) for opb703, opb704 and opb705, derate linearly 1.67 mw/ c above 25 c. (3) for OPB703Wz, opb704wz, opb705wz, opb70bwz, opb704g and opb704gwz derate linearly 1.82 mw/ c above 25 c. (4) the distance from the assembly face to the reflective surface is d. (5) crosstalk (i cx ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (6) measured using eastman kodak neutral white test card with 90% diffuse reflectance as a reflecti ng surface. reference: eas tman kodak, catalog # e 152 7795. (7) all parameters tested using pulse techniques. electrical characteristics (t a = 25 c unless otherwise noted) (opb703, OPB703Wz, opb704, opb704wz, opb705, opb705wz, opb704g, opb704gwz) symbol parameter min typ max units test conditions input diode (see op265 for additional information ? for reference only) v f forward voltage - - 1.7 v i f = 40ma i r reverse current - - 100 a v r = 2 v output phototransistor (see op505 for additional inform ation ? for reference only) v (br)ceo collector-emitter breakdown voltage 30 - - v i ce = 100 a v (br)eco emitter-collector breakdown voltage 5 - - v i ec = 100a i ceo collector dark current - - 250 na v ce = 10 v, i f = 0, e e =0 coupled i c(on) on-state collector current opb703, OPB703Wz opb704, opb704wz opb705, opb705wz 0.30 0.20 0.15 - - - 2.5 2.5 1.0 ma v ce = 5 v, i f = 40ma , d = 0.15? (3)(7) opb704g, opb704gwz 0.50 - 6.0 v ce = 5 v, i f = 40ma , = 0.20? (3)(6) i cx crosstalk opb703, OPB703Wz opb704, opb704wz opb705, opb705wz - - - - - - 20 20 10 a v ce = 5 v, i f = 40ma (6)
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 5 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. notes: (1) rma flux is recommended. duration can be extend ed to 10 seconds maximum when flow soldering. (2) derate linearly 1.82 mw/ c above 25 c. (3) the distance from the assembly face to the reflective surface is d. (4) crosstalk (i cx ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (5) measured using eastman kodak neutral white test card with 90% diffuse reflectance as a reflecti ng surface. reference: eas t- man kodak, catalog # e 152 7795. (6) all parameters tested using pulse techniques. electrical characteristics (t a = 25 c unless otherwise noted) (opb70awz) symbol parameter min typ max units test conditions input diode (see op265 for additional information ? for reference only) v f forward voltage - - 1.7 v i f = 40ma i r reverse current - - 100 a v r = 2 v output photodarlington (see op535 for additional information ? for reference only) v (br)ceo collector-emitter breakdown voltage 15 - - v i ce = 1.0 ma, e e =0 v (br)eco emitter-collector breakdown voltage 5 - - v i ec = 100a, e e =0 i ceo collector dark current - - 250 na v ce = 10 v, i f = 0, e e =0 coupled i c(on) on-state collector current 5.0 - 26.0 ma v ce = 5 v, i f = 40ma , d = 0.15? (2)(5) i cx crosstalk - - 25 a v ce = 5 v, i f = 40ma (4) v (sat) saturation voltage - - 1.15 v i c = 400 a, i f = 40ma , d = 0.15? (2)(5)
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 6 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. notes: (1) rma flux is recommended. duration can be extend ed to 10 seconds maximum when flow soldering. (2) for opb703, opb704 and opb705, derate linearly 1.67 mw/ c above 25 c. (3) for OPB703Wz, opb704wz, op b705wz and opb70bwz, derate linearly 1.82 mw/ c above 25 c. (4) the distance from the assembly face to the reflective surface is d. (5) crosstalk (i cx ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (6) measured using eastman kodak neutral white test card with 90% diffuse reflectance as a reflecti ng surface. reference: eas tman kodak, catalog # e 152 7795. (7) all parameters tested using pulse techniques. electrical characteristics (t a = 25 c unless otherwise noted) (opb70bwz) symbol parameter min typ max units test conditions input diode (see op265 for additional information ? for reference only) v f forward voltage - - 1.7 v i f = 40ma i r reverse current - - 100 a v r = 2 v output phototransistor (see op705 for additional inform ation ? for reference only) v (br)ceo collector-emitter breakdown voltage 30 - - v i ce = 100 a v (br)eco emitter-collector breakdown voltage 0.4 - - v i ec = 100a i ceo collector dark current - - 100 na v ce = 10 v, i f = 0, e e =0 coupled i c(on) on-state collector current opb70bwz 0.50 - 3.0 ma v ce = 5 v, i f = 40ma , d = 0.15? (3)(6) i cx crosstalk opb70bwz - - 5 a v ce = 5 v, i f = 40ma (5)
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 7 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. notes: (1) rma flux is recommended. duration can be extend ed to 10 seconds maximum when flow soldering. (2) for OPB703Wz, opb704wz, op b705wz and opb70bwz, derate linearly 1.82 mw/ c above 25 c. (3) the distance from the assembly face to the reflective surface is d. (4) lower curve is based on a calculated worst- case condition, rather than the conventional -2 ? limit. (5) crosstalk (i cx ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (6) measured using eastman kodak neutral white test card with 90% diffuse reflectance as a reflecti ng surface. reference: eas t- man kodak, catalog # e 152 7795. (7) all parameters tested using pulse techniques. coupled i c(on) on-state collector current opb70cwz .10 - 1.0 ma v ce = 5 v, i f = 40ma , d = 0.15? (2)(5) opb70ewz .25 - 2.5 v (sat) saturation voltage - - 0.4 v i c = 100 a, i f = 40ma , d = 0.15? (2)(5) i cx - - 2 a v ce = 5 v, i f = 40ma (4) crosstalk electrical characteristics (t a = 25 c unless otherwise noted) (opb70cwz and opb70ewz) symbol parameter min typ max units test conditions input diode (see ovlas6cb8 for additional info rmation ? for reference only) v f forward voltage - - 2.6 v i f = 40ma i r reverse current - - 100 a v r = 2 v output phototransistor (see op505 for additional information ? for reference only) v (br)ceo collector-emitter breakdown voltage 30 - - v i ce = 100a, i f = 0, e e =0 v (br)eco emitter-collector breakdown voltage 0.4 - - v i ec = 100a, i f = 0, e e =0 i ceo collector dark current - - 100 na v ce = 10 v, i f = 0, e e =0
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 8 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. notes: (1) rma flux is recommended. duration can be extend ed to 10 seconds maximum when flow soldering. (2) for OPB703Wz, opb704wz, op b705wz and opb70bwz, derate linearly 1.82 mw/ c above 25 c. (3) the distance from the assembly face to the reflective surface is d. (4) crosstalk (i cx ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (5) measured using eastman kodak neutral white test card with 90% diffuse reflectance as a reflecti ng surface. reference: eas t- man kodak, catalog # e 152 7795. (6) all parameters tested using pulse techniques. coupled i c(on) on-state collector current opb70dwz .10 - 1.5 ma v ce = 5 v, i f = 40ma , d = 0.15? (2)(5) opb70fwz .25 - 3.5 v (sat) saturation voltage - - 0.4 v i c(on) = 100 a, i f = 40ma , d = 0.15? (2)(5) i cx - - 5.0 a v ce = 5 v, i f = 40ma (4) crosstalk electrical characteristics (t a = 25 c unless otherwise noted) (opb70dwz and opb70fwz) symbol parameter min typ max units test conditions input diode (see ovlas6cb8 for additional info rmation ? for reference only) v f forward voltage - - 2.6 v i f = 40ma i r reverse current - - 100 a v r = 2 v output phototransistor (see op505 for additional information ? for reference only) v (br)ceo collector-emitter breakdown voltage 30 - - v i ce = 100a, i f = 0, e e =0 v (br)eco emitter-collector breakdown voltage 5.0 - - v i ec = 100a, i f = 0, e e =0 i ceo collector dark current - - 250 na v ce = 10 v, i f = 0, e e =0
optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue b.3 03/09 page 9 of 9 reflective object sensor opb703 through opb705, OPB703Wz through opb705wz, opb70awz through opb70fwz optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. forward voltage vs forward current vs temp 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40 forward current (ma) typical forward voltage -40 c -20 c 0 c 20 c 40 c 60 c 80 c normalized forward current at 20 ma and 20 c opb705 - output vs distance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 distance (inches) normalized output kodak 90% kodak 19% copier paper avery labels retro reflective normalized at i f = 40 ma distance = 0.15" & kodak 90% opb703 - output vs distance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 distance (inches) normalized output kodak 90% kodak 19% avery corporate retro reflective normalized at i f = 40 ma distance = 0.15" & kodak 90% opb704 - output vs distance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 distance (inches) normalized output kodak 90% kodak 19% copier paper avery label retro reflective normalized at i f = 40 ma distance = 0.15" & kodak 90% opb703?output distance opb704, opb70b?output distance opb705, opb70a, opb70c, opb70d?output distance
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