BAS31 vishay semiconductors formerly general semiconductor document number 88128 www.vishay.com 15-may-02 1 new product dual in-series general-purpose controlled-avalanche diode maximum ratings and thermal characteristics t a = 25? unless otherwise noted parameter symbol value unit continuous reverse voltage v r 90 v peak repetitive reverse voltage v rrm 110 v peak repetitive reverse current i rrm 600 ma forward current (continuous) single diode loaded i f 250 (1) ma dual diode loaded 150 (1) peak repetitive forward current i rfm 600 ma non-repetitive peak forward current (2) at t p = 1 s10 at t p = 100 si fsm 4.0 a at t p = 1s 0.75 power dissipation p tot 250 (1) mw peak repetitive reverse energy e rrm 5mj at t p = 50 s, f 20h z , t j = 25 c typical thermal resistance junction to ambient air r ja 500 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c notes: (1) device on fiberglass substrate, see layout on second page (2) square wave with t j = 25 c prior to surge .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features silicon epitaxial planar diode for general purpose switching applications mechanical data case: sot-23 (to-236ab) plastic package weight: approx. 0.008g marking code: l21 packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box mounting pad layout 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) top view to-236ab (sot-23) dimensions in inches and (millimeters)
BAS31 vishay semiconductors formerly general semiconductor www.vishay.com document number 88128 2 15-may-02 electrical characteristics (per diode) t j = 25 c unless otherwise noted parameter symbol test condition min max unit i f = 10ma 750 mv i f = 50ma 840 mv forward voltage v f i f = 100ma 900 mv i f = 200ma 1.00 v i f = 400ma 1.25 v reverse current i r v r = 90v 100 na v r = 90v, t j = 150 c 100 a reverse avalanche breakdown voltage v (br)r i r = 1ma 120 170 v diode capacitance c d f = 1mhz v r = 0 35 pf reverse recovery time t rr i f = i a = 30ma 50 ns i r = 30ma, r l = 100 ? , i rr = 3ma 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches (millimeters) layout for r ja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm)
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