? 1/5 ESDA6V1-5P6 transil? array for esd protection rev. 2 sot-666ip (internal pad) may 2004 main applications where transient overvoltage protection in esd sensitive equipment is required, such as : computers printers communication systems and cellular phones video equipment this device is particularly adapted to the protec- tion of symmetrical signals. features 5 unidirectional transil? functions breakdown voltage v br = 6.1 v min. low leakage current < 500 na very small pcb area < 2.6 mm 2 description the ESDA6V1-5P6 is a monolithic array designed to protect up to 5 lines against esd transients. the device is ideal for situations where board space saving is required. benefits high esd protection level high integration suitable for high density boards complies with the following standards: iec61000-4-2 level4: 15kv (air discharge) 8kv (contact discharge) mil std 883e-method 3015-7: class3 25kv hbm (human body model) order codes part number marking ESDA6V1-5P6 c asd? functional diagram i/o1 i/o2 gnd i/o5 i/o4 i/o3
ESDA6V1-5P6 2/5 ? absolute maximum rating (t amb = 25c) electrical characteristics (t amb = 25c) symbol parameter value unit v pp esd discharge iec61000-4-2 air discharge iec61000-4-2 contact discharge 15 8 kv p pp peak pulse power (8/20s) (see note 1) t j initial = t amb 100 w t j junction temperature 125 c t stg storage temperature range -55 to +150 c t l lead solder temperature (10 seconds duration) 260 c t op operating temperature range -40 to +150 c note 1: for a surge greater than the maximum values, the diode will fail in short-circuit. symbol parameter v rm stand-off voltage v br breakdown voltage v cl clamping voltage i rm leakage current i pp peak pulse current t voltage temperature coefficient v f forward voltage drop c capacitance rd dynamic resistance part number v br @ i r i rm @ v rm r d tc min. max. max. typ. max. typ. @ 0v vv ma a v m ? 10 -4 /c pf ESDA6V1-5P6 6.1 7.2 1 0.5 3 610 4 50 v i v cl v br v rm i f v f i rm i pp slope: 1/r d
ESDA6V1-5P6 3/5 ? fig. 1: peak power dissipation versus initial junction temperature. fig. 2: peak pulse power versus exponential pulse duration (tj initial = 25c). fig. 3: clamping voltage versus peak pulse current (tj initial = 25c). rectangular waveform tp = 2.5s. fig. 4: peak forward voltage drop versus peak forward current (typical values). fig. 5: capacitance versus reverse applied voltage (typical values). fig. 6: relative variation of leakage current versus junction temperature (typical values). p [t initial] / [t initial=25c] pp j j p pp 0 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 t initial (c) j 10 100 1000 1 10 100 t (s) p p (w) pp t initial = 25c j 0 5 10 15 20 25 30 35 40 0.1 1.0 10.0 50.0 v (v) cl i (a) pp tp = 2.5s i (a) fm 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1e-3 1e-2 1e-1 1e+0 v (v) fm t = 25c j 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 20 30 40 50 v (v) r c(pf) f=1mhz v =30mv t =25c osc rms j 25 50 75 100 125 1 10 50 t (c) j i [t ] / i [t =25c] rj rj
ESDA6V1-5P6 4/5 ? order code ordering information revision history fig. 7: esd response @ v pp =8kv contact. fig. 8: esd response @ v pp =15kv contact. part number marking package weight base qty delivery mode ESDA6V1-5P6 c sot-666ip 2.9 mg 3000 tape & reel table 1: revision history date revision description of changes january-2004 1 first issue 25-may-2004 2 stylesheet update. no content change. iec61000-4-2: v =8kv contact pp iec61000-4-2: v =15kv contact pp esda 6v1 5 p6 esd array vmin br 5 lines package: sot-666ip
ESDA6V1-5P6 5/5 ? package mechanical data sot-666ip (internal pad) foot print dimensions (in millimeters) a3 a (4x) b1 l1 l3 b e1 e l4 l2 d e e1 0.36 0.20 0.30 1.26 2. 30 0.62 0.84 0.20 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com ref. dimensions millimeters inches min. max. min. max. a 0.53 0.60 0.021 0.024 a3 0.13 0.18 0.005 0.007 d 1.50 1.70 0.059 0.067 d2 1.05 1.25 0.041 0.049 e 1.50 1.70 0.059 0.067 e1 1.10 1.30 0.043 0.051 e2 0.23 0.43 0.009 0.017 l1 0.11 0.26 0.004 0.010 l2 0.10 0.30 0.004 0.012 l3 0.05 - 0.002 - l4 0.83 ref 0.032 b 0.14 0.25 0.006 0.010 b1 - 0.34 0.013 e 0.50 bsc 0.020 e1 0.20 - 0.008 8 12 8 12
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