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| Target data sheet SPD11N10 SPU11N10 Product Summary VDS RDS(on) ID 100 179 10.5 P-TO252 Feature SIPMOS =Power-Transistor * N-Channel * Enhancement mode *=175C operating temperature * Avalanche rated * dv/dt rated P-TO251 V m A Type SPD11N10 SPU11N10 Package P-TO252 P-TO251 Ordering Code - Marking 11N10 11N10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 10.5 - Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 42 60 6 20 48 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =10.5 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.5A, VDS =80V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-03-16 Target data sheet Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPD11N10 SPU11N10 Values min. typ. max. 3.1 100 75 50 K/W Unit Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 21 A Zero gate voltage drain current VDS =100V, VGS=0V, Tj =25C VDS =100V, VGS=0V, Tj =125C A 0.01 1 1 tbd 1 100 100 179 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=-A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-03-16 Target data sheet Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =50V, VGS=10V, ID =10.5A, RG =27 VDS 2*ID *RDS(on)max , ID =-A VGS =0V, VDS =25V, f=1MHz SPD11N10 SPU11N10 Values min. tbd typ. tbd tbd tbd tbd tbd tbd tbd tbd max. tbd tbd tbd tbd tbd tbd tbd ns S pF Unit Symbol Conditions Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =10.5A VR =50V, IF =lS , diF /dt=100A/s Qgs Qgd Qg VDD =80V, ID=10.5A - tbd tbd tbd tbd tbd tbd tbd - nC VDD =80V, ID=10.5A, VGS =0 to 10V V(plateau) VDD =80V, ID=10.5A IS ISM V TC=25C - tbd tbd tbd 10.5 42 tbd tbd tbd A V ns nC Page 3 2001-03-16 Target data sheet Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. SPD11N10 SPU11N10 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 4 2001-03-16 |
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