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| DZT5551 NPN SURFACE MOUNT TRANSISTOR Features * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (DZT5401) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 3) 3 2 1 4 NEW PRODUCT Mechanical Data * * * * * * * * Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.112 grams (approximate) @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC SOT-223 COLLECTOR 3E C4 2C 1B TOP VIEW 2,4 1 BASE 3 EMITTER Schematic and Pin Configuration Maximum Ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Value 180 160 6.0 600 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation @TA = 25C (Note 3) Thermal Resistance, Junction to Ambient @TA = 25C (Note 3) Operating and Storage Temperature Range Symbol PD RJA Tj, TSTG Value 1 125 -55 to +150 Unit W C/W C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: 1. 2. 3. 4. @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 80 80 30 50 100 Max 50 50 250 0.15 0.20 1.0 6.0 200 300 8.0 Unit V V V nA A nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200A, RS = 1.0k, f = 1.0kHz hFE VCE(SAT) VBE(SAT) Cobo hfe fT NF V V pF MHz dB No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. DS31219 Rev. 2 - 2 1 of 4 www.diodes.com DZT5551 (c) Diodes Incorporated 1.0 PD, POWER DISSIPATION (mW) 0.30 IC, COLLECTOR CURRENT (A) 0.8 0.25 IB = 10mA 0.20 IB = 8mA IB = 6mA 0.6 NEW PRODUCT 0.15 IB = 4mA 0.4 0.10 IB = 2mA 0.2 0.05 0 25 50 150 100 125 75 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 0.00 0 250 0.3 200 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.2 150 100 0.1 50 0 0 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 1.2 1 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0.0001 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current DS31219 Rev. 2 - 2 2 of 4 www.diodes.com DZT5551 (c) Diodes Incorporated 60 50 f = 1MHz 40 Cibo NEW PRODUCT 30 20 fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 250 200 150 100 VCE = 10V f = 100MHz 10 Cobo 50 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 100 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 0 0 Ordering Information (Note 5) Device DZT5551-13 Notes: Packaging SOT-223 Shipping 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Top View) YWW K4N = Product type marking code = Manufacturer's code marking YWW = Date code marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm DS31219 Rev. 2 - 2 3 of 4 www.diodes.com DZT5551 (c) Diodes Incorporated Suggested Pad Layout 3.3 1.6 NEW PRODUCT 6.4 1.6 1.2 2.3 (Unit: mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31219 Rev. 2 - 2 4 of 4 www.diodes.com DZT5551 (c) Diodes Incorporated |
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