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| NJG1107HA8 www..com LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1107HA8 is a Low Noise Amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high input IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input DC blocking capacitor. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra small and ultra thin package of USB6-A8 is adopted. PACKAGE OUTLINE NJG1107HA8 FEATURES Low voltage operation Low current consumption High small signal gain Low noise figure High Input IP3 Ultra small & ultra thin package +2.7V typ. 2.5mA typ. 17dB typ. @f=1.575GHz 1.1dB typ. @f=1.575GHz -4.0dBm typ. @f=1.575+1.5751GHz USB6-A8(Mount Size: 1.0x1.2x0.38mm) PIN CONFIGURATION HA8 Type (Top View) 3 4 2 A MP Pin Connection 1. RFOUT 2. EXTCAP 3. GND 4. GND 5. RFIN 6. N/C 5 6 1 Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver.2006-08-25 -1- NJG1107HA8 www..com ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50ohm PARAMETER Drain Voltage Input Power Power Dissipation Operating Temp. Storage Temp. SYMBOL VDD Pin PD Topr Tstg VDD=2.7V At on PCB board CONDITIONS RATINGS 6.0 +15 135 -40~+85 -55~+150 UNIT V dBm mW C C ELECTRICAL CHARACTERISTICS VDD=2.7V, f=1.575GHz, Ta=+25C, Zs=Zl=50ohm, TEST CIRCUIT PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Noise Figure Pin at 1dB Gain Compression point Input 3rd Order Intercept Point RF Input Port VSWR RF Output Port VSWR SYMBOL freq1 VDD IDD Gain NF P-1dB IIP3 VSWRi VSWRo f=1.575+1.5751GHz RFin=-35dBm CONDITIONS MIN 1.57 TYP 1.575 MAX 1.58 UNIT GHz V mA dB dB dBm dBm 2.5 RF OFF 15.0 -20.0 2.7 2.5 17.0 1.1 -16.0 5.5 3.2 1.3 2.0 2.0 -7.0 - -4.0 1.6 1.6 -2- NJG1107HA8 www..com PIN CONFIGURATION Pin Function Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. An external bypass capacitor is required. Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. Neutral terminal. Should be connected to the ground. 1 Rfout 2 3,4 5 6 EXTCAP GND Rfin N/C -3- NJG1107HA8 www..com TYPICAL CHARACTERISTICS NF vs. frequency (VDD=2.7V, Ta=25 oC) 4 3.5 3 10 5 0 Pout vs. Pin (VDD=2.7V, f=1575MHz, Ta=25oC) NF (dB) 2.5 2 1.5 1 0.5 0 1.5 Pout (dBm) -5 Pout -10 -15 -20 -25 -30 -40 P-1dB(IN)=-15.3dBm NF 1.55 1.6 1.65 -35 -30 -25 -20 -15 -10 -5 0 frequency (MHz) Pin (dBm) Pout, IM3 vs. Pin (VDD=2.7V, f1=1575MHz, f2=f1+100kHz, Ta=25 oC) 20 20 k factor vs. frequency (VDD=2.7V, Ta=25 oC) 0 Pout Pout, IM3 (dBm) -20 15 -40 k factor IM3 IIP3=-4.0dBm -35 -30 -25 -20 -15 -10 -5 0 10 -60 5 -80 -100 -40 0 0 5 10 15 20 Pin (dBm) frequency (GHz) Gain, NF vs. VDD (f=1575MHz, Ta=25 C) 19 18 17 7 6 4 5 o IDD vs. VDD (RF=OFF, Ta=25 oC) 5 Gain Gain (dB) IDD (mA) 16 15 14 13 12 2.5 4 3 2 NF (dB) 3 IDD 2 NF 1 1 0 0 2.5 3 3.5 4 4.5 5 3 3.5 4 4.5 5 VDD (V) VDD (V) -4- NJG1107HA8 www..com TYPICAL CHARACTERISTICS P-1dB(IN) vs. VDD (f=1575MHz, Ta=25oC) -6 -8 20 18 16 OIP3, IIP3 vs. VDD (f1=1575MHz, f2=f1+100kHz, Pin=-35dBm, Ta=25oC) 8 6 P-1dB(IN) (dBm) -10 OIP3 4 2 OIP3 (dBm) -12 -14 -16 -18 -20 2.5 P-1dB(IN) 14 12 10 8 6 2.5 IIP3 0 -2 -4 -6 3 3.5 4 4.5 5 3 3.5 4 4.5 5 VDD (V) VDD (V) Gain, NF vs. Temperature (VDD=2.7V, f=1575MHz) 19 18 17 4 3.5 5 IDD vs. Temperature (VDD=2.7V, RF=OFF) Gain 4 3 Gain (dB) IDD (mA) NF (dB) 16 15 14 13 12 11 -50 2.5 2 3 IDD NF 1.5 1 2 1 0.5 0 100 0 -50 0 50 o 0 50 o 100 Temperature ( C) Temperature ( C) P-1dB(IN) vs. Temperature (VDD=2.7V, f=1575MHz) -8 -10 15 14 13 OIP3, IIP3 vs. Temperature (VDD=2.7V, f1=1575MHz, f2=f1+100kHz, Pin=-35dBm) 2 1 0 P-1dB(IN) (dBm) -12 OIP3 (dBm) OIP3 12 11 -1 -2 -14 -16 -18 -20 -22 -24 -50 P-1dB(IN) IIP3 10 9 8 7 -50 -3 -4 -5 -6 100 0 50 o 100 0 50 o Temperature ( C) Temperature ( C) -5- IIP3 (dBm) IIP3 (dBm) NJG1107HA8 www..com TYPICAL CHARACTERISTICS -6- NJG1107HA8 www..com TEST CIRCUIT (Top View) GND 3 EXTCAP GND 4 2 C3 1000pF L2 12nH RFIN RFOUT L4 22nH C1 2pF RF IN L1 18nH 5 1 RF OUT L3 3.9nH VDD=2.7V C2 1000pF N/C 6 1 Pin INDEX RECOMMENDED PCB DESIGN (Top View) Parts ID Comment TDK (MLK0603) TDK (MLG1005) MURATA (GRM03) L1, L3, L4 L2 C1~C3 C3 RF Input L L L4 C1 RF Output L C2 PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=14.0mmX14.0mm VDD -7- NJG1107HA8 www..com PACKAGE OUTLINE (USB6-A8) 0.380.06 +0.012 0.038-0.009 S 0.03 S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.2 (MIN0.15) 6 5 1.20.05 0.20.04 C0.1 R0.05 1 0.10.05 Photo resist coating 0.8 0.4 0.6 0.20.04 2 3 0.4 1.00.05 0.20.07 4 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -8- |
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