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SRAM
Austin Semiconductor, Inc. 8K x 8 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
* SMD 5962-38294 * MIL-STD-883
www..com FEATURES
MT5C6408
PIN ASSIGNMENT (Top View)
A6 A7 A12 NC Vcc WE\ CE2\ 4 3 2 1 28 27 26
A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 25 24 23 22 21 20 19 A8 A9 A11 OE\ A10 CE1\ DQ7
28-Pin DIP (C) (300 MIL)
NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4
28-Pin LCC (EC)
* High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns * Battery Backup: 2V data retention * High-performance, low-power CMOS double-metal process * Single +5V (+10%) Power Supply * Easy memory expansion with CE1\ and CE2 * All inputs and outputs are TTL compatible
12 13 14 15 16 17 18
28-Pin Flat Pack (F)
NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15
DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1
OPTIONS
* Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access * Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack
MARKING
-12 -15 -20 -25 -35 -45 -55* -70*
Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4
GENERAL DESCRIPTION
No. 108 No. 204 No. 302 The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM's have equal access and cycle times. For flexibility in high-speed memory applications, Austin Semiconductor offers dual chip enables (CE1\, CE2) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
C EC F
* Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT * 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns access devices.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
VCC Vss
MT5C6408
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A0 A1 A2 A3 A4 A5 A6 A7
ROW DECODER
DQ8
I/O CONTROL
65,536-BIT MEMORY ARRAY
DQ1
CE1\ CE2 COLUMN DECODER OE\ WE\
A8
A9
A10
A11
A12
POWER DOWN
TRUTH TABLE
MODE STANDBY STANDBY READ READ WRITE CE1\ H X L L L CE2 X L H H H WE\ X X H H L OE\ X X L H X DQ POWER HIGH-Z STANDBY HIGH-Z STANDBY Q ACTIVE HIGH-Z ACTIVE D ACTIVE
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss........-0.5V to +7.0V Voltage on Vcc Supply Relative to Vss.................-0.5V to +7.0V Storage Temperature............................................-65oC to +150oC Power Dissipation......................................................................1W Max Junction Temperature..................................................+175C Lead Temperature (soldering 10 seconds)........................+260oC Short Circuit Output Current................................................50mA
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MT5C6408
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage CONDITIONS SYMBOL VIH VIL IL I ILO VOH VOL MIN 2.2 -0.5 -10 -10 2.4 MAX Vcc+0.5 0.8 10 10 0.4 UNITS V V A A V V 1 1 NOTES 1 1, 2
0V VIN Vcc Output(s) disabled 0V < VOUT < Vcc IOH = -4.0mA IOL = 8.0mA
PARAMETER Power Supply Current: Operating
CONDITIONS CE\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz
SYM Icc ISBTSP ISBTLP ISBCSP ISBCLP
-12 180
-15 170
MAX -20 -25 160 155
-35 155
-45 145
UNITS NOTES mA 3
Power Supply Current: Standby
40 30 20 10
40 30 20 10
40 30 20 10
40 30 20 10
40 30 20 10
40 30 20 10
mA mA mA mA
CAPACITANCE
DESCRIPTION Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz Vcc = 5V
o
SYM CI CO
MAX 6 7
UNITS pF pF
NOTES 4 4
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
MT5C6408
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time www..com Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -12 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 12 12 12 2 2 7 8 0 7 12 10 10 0 0 10 7 0 2 0 15 13 13 0 0 13 10 0 0 0 0 10 20 15 15 0 0 15 12 0 0 0 0 0 10 12 0 15 25 20 20 0 0 20 15 0 0 0 15 15 15 0 0 15 15 0 15 35 30 30 0 0 30 15 5 0 0 20 20 20 0 0 15 15 0 30 45 40 40 0 0 40 20 5 0 0 25 25 25 3 0 15 15 0 40 35 35 35 3 0 25 20 45 45 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
7 6, 7
6
7
10
10
15
15
25
7 6, 7
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2
MT5C6408
167 Q 30pF VTH = 1.73V Q
167 5pF VTH = 1.73V
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Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage, 1. 2. 3.
allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. CE2 timing is the same as CE1\ timing. The waveform is inverted. 13. Chip enable (CE1\, CE2) and write enable (WE\) can initiate and terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data CE\ > (VCC - 0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC - 0.2V) or < 0.2V VCC = 2V ICCDR 300 A CONDITIONS SYM VDR MIN 2 MAX --UNITS V NOTES
tCDR tR
0 tRC
---
ns ns
4 4, 11
LOW Vcc DATA RETENTION WAVEFORM
VCC
t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR VDR
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
4321 4321 4321 4321
321 321 321 321
CE\
VIH VIL
4216 3326 32 87 421154321 332154321 87 421154321 321154321 87 3326 4876
987654321 4321 321 987654321 4321 987654321 987654321 321
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc.
MT5C6408
READ CYCLE NO. 1
ttRC RC
ADDRESS www..com
VALID
8, 9
ttAA AA t OH tOH
DQ
PREVIOUS DATA VALID DATA VALID
READ CYCLE NO. 2
ttRC RC
CE\
7, 8, 10, 12
ttAOE AOE
tLZOE OE\
tLZOE
HZOE tHZOE
t
ttLZCE LZCE tACE tACE
DQ
DATA VALID
tHZCE tHZCE
t PU tPU
Icc
ttPD PD
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
4321 4321 4321
4321 1 4321 4321 432
DON'T CARE
UNDEFINED
SRAM
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12 (Chip Enabled Controlled)
WC tWC
MT5C6408
t
ADDRESS
tAW tAW
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tAS tAS
CE\ WE\
tCW tCW t WP tWP1 tDS tDS
AH tAH
t
DQ D
Q
DATA VAILD
HIGH Z
WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled)
tWC tWC
ADDRESS
tAW tAW tCW tCW t AH tAH
CE\
tAS tAS
t WP tWP1 tDS t DH tDH
WE\
DQ D
DATA VALID
HIGH-Z
5 3 21 44321 4321 1 4321 432
Q
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
321098765432109876543211 1 2 32109876543210987654321 1 32109876543210987654321
098765432121098765432109876543210987654321 098765432121098765432109876543210987654321
t DH tDH DON'T CARE
54321 54321 54321
2109876543210987654321 1 2109876543210987654321 1 987654321 987654321 987654321 116543210987654321 27 1 1 27 176543210987654321 21654321098765432
UNDEFINED
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #108 (Package Designator C) SMD 5962-38294, Case Outline Z
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MT5C6408
D
S2
Q
A
L
E S1 b2 e b
eA c
SMD SPECIFICATIONS MIN MAX SYMBOL A --0.225 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.070 S1 0.005 --S2 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-38294, Case Outline U
D1 B2
MT5C6408
www..com
D2 L2
E3
e E E1 E2
h x 45o D hx45o D3 A1 A L B1
SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2
SMD SPECIFICATIONS MIN MAX 0.060 0.075 0.050 0.065 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #302 (Package Designator F) SMD 5962-38294, Case Outline M
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e
MT5C6408
b D
S
Top View
L c
E A Q E2 E3
SYMBOL A b c D E E2 E3 e L Q S
SMD SPECIFICATIONS MIN MAX 0.045 0.115 0.015 0.019 0.004 0.009 --0.640 0.350 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 ---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc. ORDERING INFORMATION
EXAMPLE: MT5C6408C-25L/XT Package Speed Options** Process Type ns C C C C C C C C -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /* EXAMPLE: MT5C6408EC-15L/IT Package Speed Options** Process Type ns EC EC EC EC EC EC EC EC -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /*
MT5C6408
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Device Number MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408
Device Number MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408
EXAMPLE: MT5C6408F-55/883C Package Speed Options** Process Type ns F F F F F F F F -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /*
Device Number MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408 MT5C6408
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power
-40oC to +85oC -55oC to +125oC -55oC to +125oC
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
Austin Semiconductor, Inc.
MT5C6408
ASI TO DSCC PART NUMBER CROSS REFERENCE*
ASI Package Designator C
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ASI Package Designator EC
ASI Part # MT5C6808EC-12/883C MT5C6808EC-12L/883C MT5C6808EC-20/883C MT5C6808EC-20L/883C MT5C6808EC-25/883C MT5C6808EC-25L/883C MT5C6808EC-35/883C MT5C6808EC-35L/883C MT5C6808EC-45/883C MT5C6808EC-45L/883C MT5C6808EC-55/883C MT5C6808EC-55L/883C MT5C6808EC-70/883C SMD Part # 5962-3829447MUX 5962-3829446MUX 5962-3829458MUA 5962-3829457MUA 5962-3829456MUA 5962-3829455MUA 5962-3829454MUA 5962-3829453MUA 5962-3829452MUA 5962-3829451MUA 5962-3829450MUA 5962-3829449MUA 5962-3829448MUA
ASI Part # MT5C6808C-12/883C MT5C6808C-12L/883C MT5C6808C-20/883C MT5C6808C-20L/883C MT5C6808C-25/883C MT5C6808C-25L/883C MT5C6808C-35/883C MT5C6808C-35L/883C MT5C6808C-45/883C MT5C6808C-45L/883C MT5C6808C-55/883C MT5C6808C-55L/883C MT5C6808C-70/883C
SMD Part # 5962-3829447MZX 5962-3829446MZX 5962-3829458MZA 5962-3829457MZA 5962-3829456MZA 5962-3829455MZA 5962-3829454MZA 5962-3829453MZA 5962-3829452MZA 5962-3829451MZA 5962-3829450MZA 5962-3829449MZA 5962-3829448MZA
ASI Package Designator F
ASI Part # MT5C6808F-12/883C MT5C6808F-12L/883C MT5C6808F-20/883C MT5C6808F-20L/883C MT5C6808F-25/883C MT5C6808F-25L/883C MT5C6808F-35/883C MT5C6808F-35L/883C MT5C6808F-45/883C MT5C6808F-45L/883C MT5C6808F-55/883C MT5C6808F-55L/883C MT5C6808C-70/883C SMD Part # 5962-3829447MMX 5962-3829446MMX 5962-3829458MMA 5962-3829457MMA 5962-3829456MMA 5962-3829455MMA 5962-3829454MMA 5962-3829453MMA 5962-3829452MMA 5962-3829451MMA 5962-3829450MMA 5962-3829449MMA 5962-3829448MZA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C6408 Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12

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