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 MS2218
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
Features
* * * * * * * 1.2 - 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 55 WATTS GP = 6.6 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2218 is a NPN silicon bipolar transistor designed for L-Band pulsed radar applications. This devices utilizes an overlay die geometry to provide superior reliability under long pulse width and high duty cycle applications. Computer controlled, automatic wirebonding and internal impedance matching assures consistent broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol
PDISS IC Vcc TJ TSTG
Parameter
Value
107 5.0 32 250 -65 to +200
Unit
W A V C C
Power Dissipation Device Current Collector-Supply Voltage Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Junction-case Thermal Resistance* 1.4 C/W
053-7115 Rev - 11-2002
MS2218
25 ELECTRICAL SPECIFICATIONS (Tcase = 25C)
Symbol
BVcbo BVcer BVebo Ices HFE IC = 20 mA IE = 2 mA IC = 40 mA VCE = 28 V VCE = 5 V
STATIC
Test Conditions Min.
IE = 0 mA IC =0 mA RBE = 10 VBE = 0 V IC = 2 A 55 3.5 55 --15
Value Typ.
-----------
Max.
------10 150
Unit
V V V mA ---
DYNAMIC
Symbol POUT C GP
Conditions
Test Conditions Min.
f = 1215 - 1400 MHz f = 1215 - 1400 MHz f = 1215 - 1400 MHz Pulse Width = 1.0mS PIN = 12W PIN = 12W PIN = 12W Vcc = 28V Vcc = 28V Vcc = 28V 55 50 6.6
Value Typ.
-------
Max.
-------
Unit
W % dB
Duty Cycle = 10%
IMPEDANCE DATA
FREQ 1.2 GHz 1.3 GHz 1.4 GHz PIN = 12W VCC = 28V ZIN() ) 6.0 + j10 4.5 + j11 4.0 + j9.0 ZCL() ) 7.0 - j10 6.0 - j9.5 5.0 - j9.0
053-7115 Rev - 11-2002
MS2218
PACKAGE MECHANICAL DATA
053-7115 Rev - 11-2002


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