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| WFF9N50 Silicon N-Channel MOSFET Features 9A,500V, RDS(on)(Max0.85)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 0.35 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 5.1 32 30 510 13 3.5 44 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 500 9 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 2.86 62.5 Units /W /W /W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFF9N50 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=500V,VGS=0V Min 30 - Type - Max 100 1 10 Unit nA V A A V V/ Drain cut -off current IDSS VDS=400V,TC=125 Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg ID=250 A,VGS=0V ID=250A,Referenced 500 0.57 - to 25 VDS=10V,ID=250 A VGS=10V,ID=4.8A VDS=50V,ID=4.8A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=9A RG=9.1 RD=31 VDD=400V, VGS=10V, nC ID=9A (Note4,5) 30 7 15 38 9 18 (Note4,5) 2 3.7 1018 155 8 11 23 26 19 ns pF 4 0.85 V S plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=9A,VGS=0V IDR=9A,VGS=0V, dIDR / dt =100 A / s Min - Type 1.4 442 2.16 Max 9 32 2.0 633 3.24 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=9A,VDD=50V,RG=0,Starting TJ=25 3.ISD9A,di/dt300A/us,VDD Steady, all for your advance WFF9N50 Fig.1 On State Characteristics Fig.2 Transfer Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.4 Maximum Avalanche Energy vs On-State Current Fig.5 On-Resistance Variation vs Junction temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFF9N50 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case temperature Fig.9 Transient thermal Response Curve 4/7 Steady, all for your advance WFF9N50 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFF9N50 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFF9N50 TO-220F Package Dimension TO-220F Unit:mm 7/7 Steady, all for your advance |
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