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APT30GS60BRDL(G)
600V, 30A, VCE(ON) = 2.8V Typical
Resonant Mode Combi IGBT(R)
The Thunderbolt HSTM IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt(R) series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HSTM IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10s make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode.
G C
TO -24 7
Single die IGBT with separate DL
C
E G E
Features
* Fast Switching with low EMI * Very Low EOFF for Maximum Efficiency * Short circuit rated * Low Gate Charge * RoHS Compliant * Tight parameter distribution * Easy paralleling * Low Forward Diode Voltage (VF) * Ultrasoft Recovery Diode
Typical Applications
* ZVS Phase Shifted Bridge * Resonant Mode Switching * Phase Shifted Bridge * Welding * Induction heating * High Frequency SMPS
Absolute Maximum Ratings
Symbol I C1 I C2 I CM VGE SSOA tSC Parameter Continuous Collector Current TC = @ 25C Continuous Collector Current TC = @ 100C Pulsed Collector Current 1 Gate-Emitter Voltage Switching Safe Operating Area Short Circut Withstand Time 3 Rating 54 30 113 30V 113 10 s V A Unit
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ, TSTG TL WT Parameter Total Power Dissipation TC = @ 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight IGBT Diode -55 0.11 0.22 5.9 Min Typ Max 250 0.50 1.0 150 300 C oz g
11-2008 052-6353 Rev B
Unit W C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol VBR(CES)
VBR(CES)/TJ
TJ = 25C unless otherwise specified
Test Conditions VGE = 0V, IC = 250A
Reference to 25C, IC = 250A
APT30GS60BRDL(G)
Min 600 3 Typ 0.60 2.8 3.25 4 6.7 Max 3.15 5 50 1000 100 mV/C A nA V Unit V V/C
Parameter Collector-Emitter Breakdown Voltage
Breakdown Voltage Temperature Coeff
VCE(ON) VGE(th) VGE(th)/TJ ICES IGES
Collector-Emitter On Voltage 4 Gate-Emitter Threshold Voltage Threshold Voltage Temp Coeff Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
VGE = 15V IC = 30A
TJ = 25C TJ = 125C
VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V TJ = 25C TJ = 125C
VGE = 20V
Dynamic Characteristics
Symbol gfs Cies Coes Cres Co(cr) Co(er) Qg Qge Ggc td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Parameter
TJ = 25C unless otherwise specified
Test Conditions VCE = 50V, IC = 30A VGE = 0V, VCE = 25V f = 1MHz Min VGE = 0V VCE = 0 to 400V Typ 18 1600 140 90 130 95 VGE = 0 to 15V IC = 30A, VCE = 300V Inductive Switching IGBT and Diode:
8 9 10
Max -
Unit S
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Transfer Capacitance Charge Related 5 Reverse Transfer Capacitance Current Related 6 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy
8 9
pF -
145 12 65 16 29 360 27 TBD 800 570 16 29 390 22 TBD 1185 695
J ns J ns nC
-
TJ = 25C, VCC = 400V, IC = 30A RG = 9.1 7, VGG = 15V
Inductive Switching IGBT and Diode: TJ = 125C, VCC = 400V, IC = 30A RG = 9.1 7, VGG = 15V
-
Turn-Off Switching Energy 10
052-6353
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
120
VGE = 15V
APT30GS60BRDL(G)
120
T = 125C
J
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
100
VGE = 13 & 15V 12V
80
TJ = 25C
80
11V
60
60
10V 9V 8V
40
TJ = 125C
40
20
TJ = 150C
20 0
6V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics
0 0 1 2 3 4 5 6 7 8 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics
250s PULSE TEST<0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
120 100 80 60 40 20 0
6 IC = 60A 5 IC = 100A 4 = 50A IIC= 30A C 3
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
TJ = 125C TJ = 25C TJ = -55C
IC = 25A 15A I= 2 1 0
C
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
6
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 IC = 60A
14 12 10 8 VCE = 480V 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 6, Gate Charge VCE = 120V VCE = 300V
4
3
IC = 30A IC = 15A
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 5, On State Voltage vs Junction Temperature 2000 IC, DC COLLECTOR CURRENT(A) 1000 Cies
0
0
60
50
C, CAPACITANCE ( F)
P
40
30 11-2008 052-6353 Rev B
100
Coes
20
Cres
10 0 25
0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
10
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
TYPICAL PERFORMANCE CURVES
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 500
APT30GS60BRDL(G)
20 VGE = 15V 15
400
VGE =15V,TJ=125C
300
VGE =15V,TJ=25C
10
200
5 VCE = 400V
100
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V RG = 9.1, L = 100H, VCE = 400V
0
TJ = 25C, TJ =125C RG = 9.1 L = 100H
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60
RG = 9.1, L = 100H, VCE = 400V
0
VCE = 400V RG = 9.1 L = 100H
50 tf, FALL TIME (ns)
tr, RISE TIME (ns)
40
30
TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V
20
10 0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 9.1
G
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600 EOFF, TURN OFF ENERGY LOSS (J) 1400 1200 1000 800 600 400 200 0
TJ = 25C, VGE = 15V
V = 400V CE V = +15V GE R = 9.1
G
3000
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
2000
1000
TJ = 25C,VGE =15V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (mJ) 5
V = 400V CE V = +15V GE T = 125C
J
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4 SWITCHING ENERGY LOSSES (mJ)
V = 400V CE V = +15V GE R = 9.1
G
4
3
Eon2,60A
3
Eon2,60A Eoff,60A
2
Eoff,60A
2
Eon2,30A
11-2008
1
1
Eon2,30A Eon2,15A
Rev B
Eoff,30A
Eoff,30A
Eoff,15A Eon2,15A
0 0
052-6353
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,15A
0
TYPICAL PERFORMANCE CURVES
200 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
ICM
APT30GS60BRDL(G)
200 100
ICM
10
VCE(on) 13s 100s 1ms
10
VCE(on)
13s 100s 1ms
1
10ms 100ms DC line TJ = 125C TC = 75C
1
TJ = 150C TC = 25C
10ms 100ms DC line
Scaling for Different Case & Junction Temperatures: IC = IC(T = 25C)*(TJ - TC)/125
0.1
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area
0.1
C
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area
0.60
ZJC, THERMAL IMPEDANCE (C/W)
0.50 0.9 0.40 0.7 0.30 0.5 0.20
Note:
PDM
0.3 SINGLE PULSE
t1 t2
0.10
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0
120 FMAX, OPERATING FREQUENCY (kHz)
T = 75C
C
TJ (C)
0.0838 Dissipated Power (Watts) 0.00245 0.00548 0.165 0.207
TC (C)
0.209
T = 100C
C
10
ZEXT
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
1 0
T = 125C J T = 75C C D = 50 % V = 400V CE R = 9.1
G
Figure 20, Transient Thermal Impedance Model
10 20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current
052-6353
Rev B
11-2008
APT30GS60BRDL(G)
10% Gate Voltage
APT30DL60
td(on)
TJ = 125C
Collector Current
V CC
IC
V CE
tr 5%
90% 5% 10%
Switching Energy
Collector Voltage
A D.U.T.
Figure 22, Inductive Switching Test Circuit
Figure 23, Turn-on Switching Waveforms and Definitions
Gate Voltage 90% TJ = 125C
td(off) Collector Voltage
90% tf 10%
0
Collector Current
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE: 1 3 4 5 6 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Short circuit time: VGE = 15V, VCC 600V, TJ 150C Pulse test: Pulse width < 380s, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6353
Rev B
11-2008
DYNAMIC CHARACTERISTICS
APT30GS60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT30GS60BRDL(G) UNIT Amps
30 51 320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN TYP MAX UNIT Volts
1.25 2.0 1.25
MIN TYP
1.6
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.2 ZJC, THERMAL IMPEDANCE (C/W) 1 0.8 0.6
Note:
64 317 962 7 561 2244 9 264 3191 26 -
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF =30A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
PDM
0.4 0.2 0
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C) TC (C)
10-5
10-4
Dissipated Power (Watts)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6353
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Rev B
.0005
.0016
0.263
ZEXT
.112
.437
.450
11-2008
TYPICAL PERFORMANCE CURVES
100 90 80 IF, FORWARD CURRENT (A) 70 60 50 40 30 20 10 0 0 800 TJ= 125C trr, COLLECTOR CURRENT (A) TJ= 150C TJ= 55C 700 600 500 400 300 200 100 0 15A 60A 30A
APT30GS60BRDL(G)
T = 125C J V = 400V
R
TJ= 25C
Qrr, REVERSE RECOVERY CHARGE (nC)
IRRM, REVERSE RECOVERY CURRENT (A)
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125C 60A J V = 400V R 4000 3500 3000 2500 2000 1500 1000 500 15A 30A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 24 20 16 12 8 4 0
T = 125C J V = 400V
R
60A 30A 15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1 0.8 0.6 0.4 0.2 0 IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 60 50 40 IF(AV) (A) 30 20 10
Duty cycle = 0.5 TJ = 126C
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
tRR QRR
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 250 200 150 100 50 0
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
052-6353
Rev B
11-2008
10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
Vr +18V 0V D.U.T.
trr/Qrr Waveform
diF /dt Adjust
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector (Cathode)
11-2008 052-6353 Rev B
Emitter (Anode)
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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