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| CLD340 High Temperature AlGaAs Photodiode 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 1.00 (25.4) min. (R) Clairex Technologies, Inc. January, 2002 0.100 (2.54) dia. 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE 0.025 (0.64) max. 0.010 (0.25) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES(MILLIMETERS) Case 3 features * usable at 225C * 880nm wavelength * narrow response range * hermetically sealed TO-46 package * 35 acceptance angle description The CLD340 is a high temperature AlGaAs photodiode designed for sensitivity from 830 to 910nm. This specialty detector eliminates the need for signal modulation or filtering of ambient light when used where background illumination could cause problems. The 0.040" by 0.040" chip is mounted in a flat window TO-46 package. The CLE335 is recommended for optical coupling. absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature ....................................................................... -65C to +250C operating temperature .................................................................... -65C to +225C lead soldering temperature(1) ...........................................................................260C reverse voltage ................................................................................................... 10V continuous power dissipation(2) ..................................................................... 250mW notes: 1. 0.06" (1.5mm) from the header for 5 seconds maximum. 2. Derate linearly 1.0mW/C from 25C free air temperature to TA = +225C. fundamental characteristics spectral response 100 90 relative response (percent) 80 70 60 50 40 30 20 10 0 600 700 800 900 1000 wavelength (nanometers) 110 AlGaAs photodiode silicon photodiode light current vs temp. 20 18 16 light current (microamps) 14 12 10 8 6 4 2 0 10 -4 dark current vs temp. 1.0 short circuit dark current (nA) H = 1mW/cm, and = 850nm at 25C CLE335 source at same temperature as CLDX340. CLD340 10 -1 10 -2 10 -3 0 50 100 150 temperature (C) 200 25 0 50 100 150 temperature (C) 200 25 Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/6/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com CLD340 High Temperature AlGaAs Photodiode electrical characteristics at TA = 25C (unless otherwise noted) symbol ISC ID RS VBR Cj HP tr, tf parameter Short-circuit current(3) Dark current Shunt resistance Reverse breakdown Junction capacitance Total angle at half sensitivity points 0utput rise and fall time (3) (R) Clairex Technologies, Inc. min 2.0 20 - typ 3.5 0.1 3000 170 70 1.0 max 1.0 - units A nA Meg. V pF deg. s test conditions VBIAS = 0V, Ee = 1mW/cm2 VR = 5V, Ee = 0 VR = 10mV IR = 10A VBIAS = 0, f = 1MHz RL = 50, VR = 5V note: 3. Radiation source is an aluminum gallium arsenide IRED with a peak emission wavelength of 850nm. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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