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DMN601K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 4 and 6) ESD Protected Up To 2kV
Mechanical Data
* * * * * * * *
SOT-23
NEW PRODUCT
Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate)
Drain
D
Gate
ESD protected up to 2kV
TOP VIEW
Gate Protection Diode
G
Source
S
EQUIVALENT CIRCUIT
TOP VIEW Pin Out Configuration
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1)
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 60 20 300 800 Units V V mA
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 350 357 -65 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4. 5. 6.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss Min 60 1.0 80 Typ 1.6 Max 1.0 10 2.5 2.0 3.0 50 25 5.0 Unit V A A V ms pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS = 10V, ID = 0.2A
VDS = 25V, VGS = 0V, f = 1.0MHz
Device mounted on FR-4 PCB. No purposefully added lead. Halogen and Antimony Free. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DMN601K
Document number: DS30652 Rev. 4 - 2
1 of 4 www.diodes.com
June 2008
(c) Diodes Incorporated
DMN601K
ID, DRAIN CURRENT (A)
1.0 0.8 0.6 0.4 0.2 0
NEW PRODUCT
0
3 1 2 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0
1
2
1.5
1
1
0.5
0 -50
0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
-25 75 100 125 150 0 25 50 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
10
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN601K
Document number: DS30652 Rev. 4 - 2
2 of 4 www.diodes.com
June 2008
(c) Diodes Incorporated
DMN601K
NEW PRODUCT
0 Tch, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
IDR, REVERSE DRAIN CURRENT (A) 1
1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current
Ordering Information
Part Number DMN601K-7
Notes:
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
(Note 7) Case SOT-23 Packaging 3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September
K7K
Date Code Key Year Code Month Code
2005 S Jan 1 Feb 2
2006 T Mar 3
YM
2007 U Apr 4
2008 V May 5 Jun 6
2009 W Jul 7 Aug 8
2010 X Sep 9
2011 Y Oct O Nov N
2012 Z Dec D June 2008
(c) Diodes Incorporated
DMN601K
Document number: DS30652 Rev. 4 - 2
3 of 4 www.diodes.com
DMN601K Package Outline Dimensions
A
TOP VIEW
BC
NEW PRODUCT
G H K M
J
D
E
L
SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z G C
Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN601K
Document number: DS30652 Rev. 4 - 2
4 of 4 www.diodes.com
June 2008
(c) Diodes Incorporated

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