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| DMP2004WK P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * * * * Low On-Resistance Very Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * SOT-323 D NEW PRODUCT Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) Drain Gate ESD PROTECTED TOP VIEW Gate Protection Diode G Source S Equivalent Circuit TOP VIEW Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current @TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 8 -400 -1.4 Units V V mA A Characteristic Thermal Characteristics @TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 250 500 -55 to +150 Units mW C/W C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 -0.5 200 -0.5 Typ 0.7 1.1 1.7 Max -1.0 1.0 -1.0 0.9 1.4 2.0 -1.2 175 30 20 Unit V A A V mS V pF pF pF Test Condition VGS = 0V, ID = -250mA VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = -0.2A VGS = 0V, IS = -115mA VDS = -16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMP2004WK Document number: DS30931 Rev. 4 - 2 1 of 4 www.diodes.com December 2007 (c) Diodes Incorporated DMP2004WK NEW PRODUCT -ID, DRAIN CURRENT (A) 0 0 -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN CURRENT (A) -ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage DMP2004WK Document number: DS30931 Rev. 4 - 2 2 of 4 www.diodes.com December 2007 (c) Diodes Incorporated DMP2004WK NEW PRODUCT 1.1 1.0 TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance Ordering Information Part Number DMP2004WK-7 Notes: (Note 5) Case SOT-323 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September PAB Date Code Key Year Code Month Code Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 May 5 YM 2009 W Jun 6 Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D DMP2004WK Document number: DS30931 Rev. 4 - 2 3 of 4 www.diodes.com December 2007 (c) Diodes Incorporated DMP2004WK Package Outline Dimensions A TOP VIEW BC NEW PRODUCT G H K M J D F L SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0 8 All Dimensions in mm Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 2.8 G 1.0 X 0.7 Y 0.9 C 1.9 E 0.65 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2004WK Document number: DS30931 Rev. 4 - 2 4 of 4 www.diodes.com December 2007 (c) Diodes Incorporated |
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