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| NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H639 APPLICATIONS Switching And Amplifier Application. ABSOLUTE MAXIMUM RATINGSTa=25 T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................100V VCEO----Collector-Emitter Voltage.................................80V V EB O ----Emitter-Base Voltage....................................5V IC----Collector Current...................................................1A Ib----Base Current...................................................100mA TO-92 1EmitterE 2Collector C 3BaseB ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Collector-Base Breakdown Voltage Min Typ Max Unit Test Conditions BVCBO HFE1 HFE2 HFE3 VCE(sat) VBE(on) ICBO IEBO fT 80 25 40 25 0.5 1 100 100 100 250 V IC=10mA, IE=0 DC Current Gain DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector Cut-off Current VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA V V nA nA MHz IC=500mA, IB=50mA VCE=2V, IC=500mA VCB=30V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA ,f=50MHz Emitter Cut-off Current Current Gain-Bandwidth Product Shantou Huashan Electronic Devices Co.,Ltd. H639 |
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