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PD - 97561 IRF9332PBF HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 17.5 28.1 14 -9.8 V m m nC A 6 6 6 * ' ' ' ' RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25C) SO-8 Applications * Charge and Discharge Switch for Notebook PC Battery Application * System/Load Switch Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9332PBF IRF9332TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Max. -30 20 -9.8 -7.8 -80 2.5 1.6 0.02 -55 to + 150 Units V Linear Derating Factor Operating Junction and Storage Temperature Range f Power Dissipation f Power Dissipation c A W W/C C Notes through are on page 2 www.irf.com 1 09/01/2010 IRF9332PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Min. -30 --- --- --- -1.3 --- --- --- --- --- 36 --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.021 13.6 22.5 -1.9 -5.7 --- --- --- --- --- 14 27 4.1 6.6 18 15 47 73 58 1270 250 180 Max. --- --- 17.5 28.1 -2.4 --- -1.0 -150 -100 100 --- --- 41 --- --- --- --- --- --- --- --- --- --- Typ. --- --- Units V V/C m V mV/C A nA S nC nC ns Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -7.8A VDS = VGS, ID = -25A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -7.8A VDS = -15V,VGS = -4.5V,ID = -7.8A VGS = -10V VDS = -15V ID = -7.8A VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8 See Figs. 19a & 19b VGS = 0V e e h Total Gate Charge h Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance h h Gate-to-Drain Charge Gate Resistance h Gate-to-Source Charge e Output Capacitance Reverse Transfer Capacitance Parameter pF VDS = -25V = 1.0KHz Max. 102 -7.8 Units mJ A Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics Parameter IS ISM VSD trr Qrr d Min. --- --- --- --- --- Typ. --- --- --- 36 20 Max. -2.5 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. G S D Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -80 -1.2 54 30 Typ. --- --- V ns nC TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100/s Max. 20 50 e TJ = 25C, IF = -2.5A, VDD = -24V Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient e f g Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 3.3mH, RG = 25, IAS = -7.8A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9332PBF 100 TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.7V -2.5V 100 TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.7V -2.5V -ID, Drain-to-Source Current (A) 10 BOTTOM -ID, Drain-to-Source Current (A) 10 BOTTOM 1 1 0.1 -2.5V 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) -2.5V 60s PULSE WIDTH Tj = 150C 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 1.6 ID = -9.8A 1.4 VGS = -10V -I D, Drain-to-Source Current (A) 10 1.2 T J = 150C 1 T J = 25C 1.0 0.8 0.1 1 2 3 VDS = -10V 60s PULSE WIDTH 4 5 6 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 14.0 ID= -7.8A -VGS, Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance (pF) Ciss 1000 Coss Crss VDS= -24V VDS= -15V VDS= -6.0V 100 1 10 -VDS, Drain-to-Source Voltage (V) 100 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF9332PBF 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 10 1msec 1 DC -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 100 T J = 150C T J = 25C 10 0.1 T A = 25C 10msec VGS = 0V 1.0 0.3 0.5 0.7 0.9 1.1 1.3 -V SD, Source-to-Drain Voltage (V) 0.01 Tj = 150C Single Pulse 0.01 0.1 1 10 100 1000 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 10 -V GS(th), Gate threshold Voltage (V) Fig 8. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 ID = -25A 8 -I D, Drain Current (A) 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( Z thJA ) C/W Fig 10. Threshold Voltage vs. Temperature D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1 10 100 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF9332PBF ID = -9.8A 40 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) 50 50 40 Vgs = -4.5V 30 30 T J = 125C 20 20 10 T J = 25C 0 0 5 10 15 20 25 10 Vgs = -10V 0 0 10 20 30 40 50 60 70 80 -ID, Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage 500 EAS , Single Pulse Avalanche Energy (mJ) -V GS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current 1000 400 300 Single Pulse Power (W) ID TOP -2.0A -2.8A BOTTOM -7.8A 800 600 200 400 100 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15. Typical Power vs. Time D.U.T * Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices www.irf.com Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs 5 IRF9332PBF Id Vds Vgs L 0 DUT 20K 1K S S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform VDS L I AS RG -V GS -20V D.U.T IAS DRIVER 0.01 VDD A tp tp V(BR)DSS 15V Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms VDS VGS RG RD td(on) tr t d(off) tf D.U.T. VGS 10% + -VGS Pulse Width 1 s Duty Factor 0.1 % Fig 19a. Switching Time Test Circuit 6 - V DD 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRF9332PBF SO-8 Package Outline(Mosfet Dimensions are shown in milimeters (inches) & Fetky) 9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $ $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A A' HDGGDH@U@ST HDI H6Y &$ "$ !$ $ "" ( !$ $ #' # "' !&AA76TD8 %"$AA76TD8 %! $' $ !$ !& # A A' 9 6 ' & ! % " $ 7 % @ $ # C !$Ab dA 6 %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 APPUQSDIU IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking Information @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9332PBF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Consumer (per JEDEC JESD47F guidelines) MSL1 SO-8 (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2010 8 www.irf.com |
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