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RB751S-40
Diodes
Schottky barrier diode
RB751S-40
Applications Low current rectification External dimensions (Unit : mm)
0.80.05 0.120.05
Land size figure
0.8 0.6
1.20.05
Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability
1.60.1
EMD2
Construction Silicon epitaxial planar
0.30.05
Structure
0.60.1
ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory)
Taping specifications (Unit : mm)
0.20.05 4.00.1 2.00.05 1.50.05
3.50.05
1.750.1
8.00.15
1.30.06 0
1.260.05 0
0.2 0.760.05
2.450.1
0.5 0.950.06 0 Empty pocket 4.00.1 2.00.05
Absolute maximum ratings (Ta=25C)
Param eter R evers e voltage (repetitive peak) R evers e voltage (DC) Average rectified forward current Forward current s urge peak 60Hz 1cyc J unction tem perature S torage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 30 30 200 125 -40 to +125 Unit V V mA mA
Electrical characteristic (Ta=25C)
Param eter Forward voltage Revers e current Capacitance between term ins ls Sym bol VF IR Ct Min. Typ. 2 Max. 0.37 0.5 Unit V A pF IF =1m A VR =30V VR =1V , f=1MHz Conditions
0.6
Rev.B
1.7
1/3
RB751S-40
Diodes
Electrical characteristic curves
100 1000 Ta=125 Ta=125 10 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10 Ta=75 1 Ta=-25 0.1 Ta=25
10 1 0.1 0.01 0.001 0 10 20
Ta=75
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
30
100
Ta=25 Ta=-25
1
0.01
0 100 200 300 400 500 600 700 800 900 100 0
0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS VF 300 1000
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
10
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
290 280 270 260 AVE:267.4mV 250
Ta=25 IF=1mA n=30pcs
900 800 700 600 500 400 300 200 100 0 AVE:185.5nA
Ta=25 VR=30V n=30pcs
9 8 7 6 5 4 3 2 1 0
Ta=25 f=1MHz VR=1V n=10pcs
AVE:2.00pF
VF DIPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
20
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 15
1cyc 8.3ms
Ifsm 8.3ms 8.3ms 1cyc
9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t
15
10
10
5 AVE:7.30A 0
5
0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
10000
Mounted on epoxy board IM=1mA IF=10mA
0.04 DC
0.003
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
1000
1ms
time
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
0.03
D=1/2 Sin(180)
300us
Rth(j-a)
0.002 DC 0.001 Sin(180) D=1/2
0.02
100
Rth(j-c)
0.01
10 0.001
0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05
0 0 10 20 30
AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
2/3
RB751S-40
Diodes
0.1
0.1 VR D=t/T VR=15V Tj=125
AVERAGE RECTIFI FORWARD CURRENT:Io(A)
0.08 0.06 0.04 0.02 0 0 25 DC D=1/2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V
Io t T 0.08 0.06 0.04 0.02 Sin(180) 0 0 25 50 DC D=1/2
0A 0V
Io t T VR D=t/T VR=15V Tj=125
Sin(180)
50
75
100
125
75
100
125
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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