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DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control DS5969-3.2 January 2009 (LN26554) FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2 V 200A 400A *(Measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Power Inverters Motor Drives UPS Systems 1(K,E) 2(A ) 3(C1) 4(G1) 5(E1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 1200V to 3300V and currents up to 3600A. The DIM200WKS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Chopper circuit diagram ORDERING INFORMATION Order As: DIM200WKS12-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) . Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25 C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol 2 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value (IGBT arm) Isolation voltage - per module 2 Test Conditions VGE = 0V Max. 1200 20 Units V V A A W kA S V 2 Tcase = 80 C 1ms, Tcase =115 C Tcase = 25 C, Tj = 150 C VR = 0, tP = 10ms, Tvj = 125 C Commoned terminals to base plate. AC RMS, 1 min,50Hz 200 400 1390 6.25 2500 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Al2O3 Copper 24mm 13mm 175 Symbol Parameter Thermal resistance - transistor (per arm) Test Conditions Min. Typ. Max. Units Rth(j-c) Continuous dissipation - junction to case Continuous dissipation - junction to case - - 90 C/kW Rth(j-c) Thermal resistance - diode (per arm) - - 194 C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Transistor Diode - - 15 C/kW Tj Junction temperature -40 3 2.5 - 150 125 125 5 5 C C C Nm Nm Tstg - Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 2/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25 C unless stated otherwise. Symbol ICES Parameter Collector cut-off current (IGBT and Diode arm) Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125 C VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, Tcase = 125 C Min. 4.5 I1 I2 - Typ. 5.5 2.2 2.6 2.2 2.3 33 20 0.23 1375 1125 Max. 0.25 6 1 6.5 2.7 3.1 200 400 2.5 2.6 - Units mA mA A V V V A A V V nF nH m A A IGES VGE(TH) VCE(sat)A Gate leakage current Gate threshold voltage Collector-emitter saturation voltage IF IFM VFA Diode forward current Diode maximum forward current Diode forward voltage (IGBT and Diode arm) DC tp = 1ms IF = 200A IF = 200A, Tcase = 125 C VCE = 25V, VGE = 0V, f = 1MHz Tj = 125 C, Vcc = 900V, tp 10s, Vge 15V VCE(max) = VCES - L*.di/dt IEC 60747-9 Cies LM RINT SCData Input capacitance Module inductance per arm Internal resistance per arm Short circuit. Isc Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25 C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 600V, dlF/dt = 2300A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = 4.7 L RG(OFF) =4.7 70nH Min. Typ. 600 50 20 240 95 25 2 30 150 13 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125 C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 600V, dlF/dt = 2000A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) =4.7 L RG(OFF) = 4.7 70nH Min. Typ. 800 70 27 385 110 40 50 160 20 Max. Units ns ns mJ ns ns mJ C A mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 4/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR 400 400 Common emitter Tcase = 25 C 350 Vce is measured at power busbars and not the auxiliary terminals Common emitter Tcase = 125 C 350 Vce is measured at power busbars and not the auxiliary terminals 300 Collector current, IC - (A) 300 Collector current, IC - (A) 250 250 200 200 150 150 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 4.0 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 50 50 0 0 0 0 Fig.3 Typical output characteristics 45 Tc = 125 C, Vcc = 600V, 40 Rg = 4.7 Ohms 35 40 55 50 45 Fig.4 Typical output characteristics Tc = 125 C, Vcc = 600V, IC = 200A Switching energy, Esw - (mJ) 30 25 20 15 10 Switching energy, Esw - (mJ) 35 30 25 20 15 10 5 0 0 50 100 150 Collector current, IC - (A) Eon Eoff Erec 200 5 0 4 Eon Eoff Erec 10 6 8 Gate resistance, Rg - (Ohms) 12 Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR 400 VF is measured at power busbars and not the auxiliary terminals 450 Tj = 25 C Tj = 125 C Module IC Chip IC 400 350 350 300 Forward current, IF - (A) Collector current, IC - (A) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 250 300 250 200 150 100 200 150 100 50 0 0.5 Forward voltage, VF - (V) 50 Tcase = 125 C Vge = 15V Rg = 4.7 Ohms 0 0 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) 1400 Fig.7 Diode typical forward characteristics 300 Tcase =125 C Fig.8 Reverse bias safe operating area 1000 250 Reverse recovery current, Irr - (A) Transient thermal impedance, Zth (j-c) - ( C/kW ) Diode 200 100 Transistor 150 100 10 50 IGBT Diode 0 0 200 400 600 800 1000 1200 1400 Reverse voltage, VR - (V) 1 0.001 Ri (C/KW) ti (ms) Ri (C/KW) ti (ms) 0.01 1 2.10 0.11 4.49 0.10 2 11.62 3.14 25.28 3.21 3 43.85 45.60 74.24 38.58 1 4 29.53 143.02 90.03 113.97 10 0.1 Pulse width, tp - (s) Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 6/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(K,E) 2(A ) 3(C1) 4(G1) 5(E1) Nominal weight: 420g Module outline type code: W Fig.11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8 www.dynexsemi.com DIM200WKS12-A000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 8/8 www.dynexsemi.com |
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