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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage APPLICATIONS *Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 50 40 5 2 4 5 1.2 V V .cn mi e V A ICP Collector Current-Peak Collector Power Dissipation @ TC=25 A PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1531 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 1.0 A ICEO Collector Cutoff Current VCE= 10V; IB= 0 B IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Collector Output Capacitance w w R 120-220 scs .i w VEB= 5V; IC= 0 IC= 1A; VCE= 5V .cn mi e 50 150 20 100 A 10 A 220 IC= 0.5A; VCE= 5V MHz IE= 0; VCB= 20V; f= 1MHz pF hFE Classifications P 50-100 Q 80-160 isc Websitewww.iscsemi.cn 2 |
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