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MMBT8050W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Tj TS Value 25 40 6 600 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base Saturation Voltage at IC = 500 mA, IB = 50 mA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Base Breakdown Voltage at IC = 10 A Emitter Base Breakdown Voltage at IE = 100 A Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz MMBT8050CW MMBT8050DW Symbol hFE hFE hFE ICBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO fT CCBO Min. 100 160 40 25 40 6 Typ. 100 12 Max. 250 400 100 0.5 1.2 Unit nA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/08/2006 MMBT8050W C o m m o n e m itt e r c o lle c t o r c h a r a c te r is tic s C o m m o n e m it te r c o lle c to r c h a r a c te r is tic s mA 100 0 .3 5 mA 500 0 .9 0 .8 5 80 0 .3 400 IC 60 0 .2 5 IC 0 .2 300 0 .8 40 0 .1 5 200 0 .1 20 I B = 0 .0 5 m A 100 0 .7 5 V B E = 0 .7 V 0 0 10 20V VCE 0 0 1 2V VCE C o l l e c t o r s a t u r a t io n v o l t a g e v e r s u s c o ll e c t o r c u r r e n t D C c u r r e n t g a in v e r s u s c o ll e c t o r c u r r e n t V 0 .5 t y p ic a l lim it s a t T a m b = 2 5o C 1000 700 500 400 300 200 VCE=1V 0 .4 Ic IB =10 150 C 5o C o V C Esat 0 .3 h FE Ta mb =2 100 0 .2 70 50 40 -5 0 o C 0 .1 150 C o 25 C -5 0 C o o 30 20 0 1 0 -1 1 10 10 2 10 3 m A IC 10 1 0 -1 1 10 10 2 10 3 IC B a s e s a t u r a t i o n v o lt a g e v e r s u s c o ll e c t o r c u r r e n t C o m m o n e m it t e r c o lle c to r c h a r a c te r is tic s V 2 ty p ic a l l im it s a t T a m b = 2 5o C Ic IB mA 500 3 .2 2 .8 2 .4 400 =10 2 1 .8 1 .6 V B E sat IC 1 -5 0 C 25 o 300 1 .4 1 .2 o 1 200 C 0 .8 0 .6 150 C o 100 I B = 0 .2 m A 0 .4 0 1 0 -1 1 10 10 2 0 10 3 m A IC 0 1 2V VCE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/08/2006 |
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