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| CR12CM-12A Thyristor Medium Power Use REJ03G0350-0200 Rev.2.00 Nov 30, 2007 Features * IT (AV) : 12 A * VDRM : 600 V * IGT : 30 mA * Non-Insulated Type * Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. Cathode Anode Gate Anode 3 1 12 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V REJ03G0350-0200 Page 1 of 7 Rev.2.00 Nov 30, 2007 CR12CM-12A Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Ratings 18.8 12 360 544 5 0.5 6 10 2 - 40 to +125 - 40 to +125 2.0 Unit A A A A2s W W V V A C C g Conditions Commercial frequency, sine half wave Note2 180 conduction, Tc = 91C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Min. -- -- -- -- 0.2 -- -- -- Typ. -- -- -- -- -- -- 15 -- Max. 2.0 2.0 1.6 1.5 -- 30 -- 1.2 Unit mA mA V V V mA mA C/W Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied Tc = 25C, ITM = 40 A, instantaneous value Tj = 25C, VD = 6 V, IT = 1 A Tj = 125C, VD = 1/2 VDRM Tj = 25C, VD = 6 V, IT = 1 A Tj = 25C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 2. Case temperature is measured at anode tab 1.5 mm away from the molded case. REJ03G0350-0200 Page 2 of 7 Rev.2.00 Nov 30, 2007 CR12CM-12A Performance Curves Maximum On-State Characteristics 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Rated Surge On-State Current 400 Tc = 25C Surge On-State Current (A) 360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) x 100 (%) Gate Characteristics 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -60 -40 -20 Typical Example VGT = 1.5V PG(AV) = 0.5W IFGM = 2A 100 7 5 3 2 IGT = 30mA 10 -1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) Gate Voltage (V) 101 7 5 3 2 VFGM = 6V PGM = 5W 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) Gate Trigger Voltage (Tj = 25C) x 100 (%) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 103 7 5 3 2 102 7 5 3 2 101 Typical Example 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710 -1 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Time (s) REJ03G0350-0200 Page 3 of 7 Rev.2.00 Nov 30, 2007 CR12CM-12A Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 64 Average Power Dissipation (W) 48 360 Case Temperature (C) 56 140 Resistive, inductive loads 360 Resistive, 40 inductive loads 32 24 16 8 0 0 4 8 12 120 90 60 180 120 100 80 60 40 20 = 30 = 30 60 90 180 120 16 20 24 28 32 0 0 2 4 6 8 10 12 14 16 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) 64 Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 Average Power Dissipation (W) Resistive, inductive loads Natural convection 180 120 360 56 48 40 32 24 16 8 0 0 4 8 12 16 120 180 90 60 = 30 = 30 60 90 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 360 Resistive loads 20 24 28 32 Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 160 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Ambient Temperature (C) 140 140 120 100 80 60 40 20 0 0 Case Temperature (C) Resistive loads Natural convection 120 100 80 60 40 20 0 0 4 8 12 16 20 24 360 360 Resistive loads 180 120 = 30 90 60 120 180 = 30 60 90 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 28 32 Average On-State Current (A) Average On-State Current (A) REJ03G0350-0200 Page 4 of 7 Rev.2.00 Nov 30, 2007 CR12CM-12A Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 Maximum Average Power Dissipation (Rectangular Wave) 64 Average Power Dissipation (W) 48 Case Temperature (C) 56 360 140 120 100 80 60 40 Resistive, inductive loads 360 40 Resistive, inductive loads 180 270 32 120 90 DC 60 24 = 30 16 8 0 0 4 8 12 16 20 24 28 32 = 30 90 180 60 120 270 DC 20 0 0 4 8 12 16 20 24 28 32 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Average On-State Current (A) Breakover Voltage vs. Junction Temperature x 100 (%) 160 200 180 160 140 120 100 80 60 40 20 0 -60 -40 -20 Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 Resistive, inductive loads Natural convection Typical Example 360 DC = 30 60 90 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 270 180 Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) 0 20 40 60 80 100 120 140 Average On-State Current (A) Junction Temperature (C) x 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature x 100 (%) 160 140 120 100 80 60 40 20 Typical Example Tj = 125C Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) 103 7 5 3 2 102 7 5 3 2 101 0 Typical Example 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Holding Current (Tj = tC) Holding Current (Tj = 25C) -60 -40 -20 20 40 60 80 100 120 140 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (C) REJ03G0350-0200 Page 5 of 7 Rev.2.00 Nov 30, 2007 CR12CM-12A x 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) 200 180 160 140 120 100 80 60 40 20 0 -60 -40 -20 Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Typical Example 103 7 5 3 2 102 7 5 3 2 Typical Example Gate Trigger Current (tw) Gate Trigger Current (DC) 0 20 40 60 80 100 120 140 101 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction Temperature (C) Gate Current Pulse Width (s) REJ03G0350-0200 Page 6 of 7 Rev.2.00 Nov 30, 2007 CR12CM-12A Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 4.5 1.3 3.2 16Max 3.8Max 1.0 12.5Min 0.8 7.0 3.6 2.54 2.54 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name - Lead forming code Standard order code example CR12CM-12A CR12CM-12A-A8 Note : Please confirm the specification about the shipping in detail. REJ03G0350-0200 Page 7 of 7 Rev.2.00 Nov 30, 2007 4.5Max Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2 |
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