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| TSN-RED 1. 2. 2.1 2.2 Item No.: 192220 This specification applies to GaAsP / GaP LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-Diffusion 265 120 270 n-Epitaxy GaAsP n-Epitaxy GaAsP n-Substrate GaP 265 n-Electrode Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 2,05 max 2,50 10 Unit V A mcd nm Luminous intensity * IV IF = 20 mA 3,0 4,0 Peak wavelength IF = 20 mA 650 P * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 192220
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