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| SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description RFMD's SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements. Features 0.05GHz to 4GHz Operation 15.0dB GMAX at 2.44GHz P1dB =+23.8dBm at 2.44GHz OIP3 =+37.5dBm at 2.44GHz 3.1dB NF at 2.44GHz Low Cost, High Performance, Versatility 41 Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS GMAX (dB) 22.0 24.0 Typical GMAX, OIP3, P1dB VCE = 3.0V, ICE = 170mA Applications Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID Fixed Wireless, Pager Systems PA Stage for Medium Power Applications 38 OIP3 20.0 18.0 GMAX 16.0 14.0 12.0 10.0 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 29 35 Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 32 26 P1dB 23 20 2.5 Frequency (GHz) Parameter Maximum Available Gain, ZS =ZS*, ZL =ZL* Min. Specification Typ. 23.2 16.4 15.0 23.7 23.8 37.4 37.5 18.0 13.0 11.0 Max. Unit dB dB dB dBm dBm dBm dBm dB dB dB dB dB dB 880MHz Condition Output Power at 1dB Compression[2], ZS =ZSOPT, ZL =ZLOPT Output Third Order Intercept Point, ZS =ZSOPT, ZL =ZLOPT Power Gain, ZS =ZSOPT, ZL =ZLOPT 1960MHz 2440MHz 880MHz and 1960MHz 2440MHz 880MHz 1960MHz and 2440MHz 880MHZ[1] 1960MHz[2] 2440MHz[2] 880MHz 1960MHz 2440MHz Noise Figure[2], ZS =ZSOPT, ZL =ZLOPT 3.2 3.1 3.1 180 48 6.0 DC Current Gain 100 300 Thermal Resistance C/W Junction - lead Breakdown Voltage 5.7 V Collector - Emitter Device Operating Voltage 3.8 V Collector - Emitter Device Operating Current 220 mA Collector - Emitter Test Conditions:VCE =3V, ICE =170mA Typ. (unless otherwise noted), TL =25C OIP3 Tone Spacing=1MHz, POUT per tone=10dBm [1] 100% production tested with Application Circuit [2] Data with Application Circuit RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. EDS-105051 Rev F 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA-9089Z Absolute Maximum Ratings Parameter Device Current (ICE) Base Current (IB) Device Voltage (VCE) Collector - Base Voltage (VCB) Emitter - Base Voltage (VEB) RF Input Power* (See Note) Junction Temp (TJ) Operating Temp Range (TL) Storage Temp ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating 235 2.5 4.5 12 4.5 24 +150 See Graph +150 Class 1C MSL 2 Unit mA mA V V V dBm C C C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. *Note: Load condition ZL =50 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD 1.2 Maximum Recommended Operational Dissipated Power Total Dissipated Power (W) 1.0 0.8 0.6 0.4 0.2 Operational Limit (Tj<130C) -10.0 20.0 50.0 80.0 110.0 140.0 0.0 -40.0 Lead Temperature (C) Typical Performance with 2.45GHz Application Circuit Freq (MHz) VCE (v) ICE (mA) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB) ZSOPT () 15 - j5.9 11.8 - j27.6 ZLOPT () 14.2 - j2.8 16.4 - j14.2 880 3.0 2440 3.0 Test Conditions:VS =5V 170.0 23.7 37.4 18.0 -18.6 -18.7 3.2 170.0 23.8 37.5 11.0 -18.7 -23.9 3.1 IS =180mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=10dBm TL =25C 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-105051 Rev F SGA-9089Z 40.0 35.0 30.0 25.0 GMAX -15 Insertion Gain and Isolation (ICE = 170mA) DCIV Curves 0 -5 -10 400.0 350.0 300.0 Gain, GMAX (dB) IC (mA) 20.0 15.0 10.0 5.0 0.0 -5.0 -10.0 0.0 2.0 4.0 6.0 8.0 Gain Isolation -20 -25 -30 -35 250.0 200.0 150.0 100.0 -40 -45 -50 50.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10.0 Frequency (GHz) VCE (Volts) S11 versus Frequency S22 versus Frequency S11 Vs. Frequency 3.5 GHz 2.44 GHz 1.96 GHz 5 GHz S22 Vs. Frequency 5 GHz 3.5 GHz 6 GHz 2.44 GHz 6 GHz 1.96 GHz .88 GHz 8 GHz .5 GHz .88 GHz .5 GHz .2 GHz .2 GHz .1 GHz 8 GHz .1 GHz .05 GHz 10 GHz .05 GHz 10 GHz Note: S-parameters are de-embedded to the device leads with ZS=ZL=50. De-embedded S-parameters can be downloaded from our website (www.rfmd.com) EDS-105051 Rev F 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 SGA-9089Z Pin 1 2, 4 3 Function RF IN GND RF OUT Description RF input / Base Bias. External DC blocking capacitor required. Connection to ground. Use via holes to reduce lead inductance. Place via holes as close to lead as possible. RF Out / Collector bias. External DC blocking capacitor required. Suggested Pad Layout Preliminary Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Pi D 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. i ti 4 of 6 EDS-105051 Rev F SGA-9089Z Part Identification 4 A90Z 2 1 2 Alternate marking "SGA9089Z" on line one with Trace Code on line two. Ordering Information Part Number SGA-9089Z Reel Size 7" 1 3 3 Devices/Reel 1000 EDS-105051 Rev F 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA-9089Z 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-105051 Rev F |
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