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| MCLDB3/MCLDC34/MCLDB4/MCLDB6 SEMICONDUCTOR SILICON BIDIRECTIONAL DIAC FEATURES designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's Micro-MELF MECHANICAL DATA Case: Micro-MELF glass case Weight: Approx. 0.03 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Parameters MCLDB3 Power Dissipation on Printed Circuit(L=10mm) Repetitive Peak on-state Current Storage and Operating Junction Temperature Value Units MCLDC34 150 MCLDB4 MCLDB6 PC ITRM TSTG/TJ TA=50 C tp=10ms F=100Hz mW 2.0 16 2.0 2.0 A C -40 to+125/-40 to 110 ELECTRICAL CHARACTERISTICS Value Symbols Parameters Test Condition C=22nF(Note 2) See diagram 1 C=22nF(Note 2) See diagram 1 I=(IBO to IF=10mA) See Diagram 1 See Diagram 2 C=22nF(Note 2) See Diagram 3 VB=0.5 VBO max see diagram 1 Min Typ Max Max Min Min Max Typ Max MCLDB3 MCLDC34 28 32 36 30 34 38 +3 5 MCLDB4 35 40 45 Units MCLDB6 56 60 70 +4 10 VBO I +VBO II - VBO I I + VI VO IBO tr IB Breakover Voltage (Note 2 ) Breakover Voltage Symmetry Dynamic Breakover Voltage (Note1) Output Voltage (Note 1 ) Breakover Current (Note1) Rise Time (Note1) Leakage Current (Note1) V V V V mA mS mA 5 100 1.5 10 Notes: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. 3-6 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM DIAC The three layer, two terminal, axial lead, hermetically sealed diacs are RATINGS AND CHARACTERISTIC CURVES DIAGRAM 1: Current-voltage characteristics MCLDB3/MCLDC34/MCLDB4/MCLDB6 DIAGRAM 2: Test circuit for output voltage +IF 10KW 10mA 220V 50Hz 0.1mF 500KW D.U.T VO R=20W IBO IB -V DIAGRAM 3: Test circuit see diagram2 adjust R for IP=0.5A 0.5 VBO V VBO +V 90% IP 10% -IF tr FIG.1-Power dissipation versus ambient temperature (maximum values) P (mW) FIG.2-Relative variation of VBO versus junction temperature(typical values) VBO(TJ) VBO(TJ=25 C) Tamb( C) FIG.3-Peak pulse current versus pulse duration (maximum values) ITRM(A) F=100Hz TJ initial=25 C tp(ms) 3-7 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM DIAC |
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