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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD301 DESCRIPTION *DC Current Gain : hFE =30(Min.)@ IC= 3A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 45V(Min.) *Complement to Type BD302 APPLICATIONS *Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 60 UNIT V Collector Current-Continuous Collector Current-Peak w w scs .i w 45 5 8 12 2 55 150 -65~150 .cn mi e V V A A A Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.3 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD301 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 45 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 1.0 mA ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product w w. w .cn mi cse is VEB= 5V; IC= 0 IC= 3A; VCE= 2V IC= 0.3A; VCE= 3V VCB= 40V; IE= 0; TC= 150 1.0 mA 5.0 mA 30 3 MHz isc Websitewww.iscsemi.cn 2 |
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