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TYPICAL PERFORMANCE CURVES
APT50GT60BR_SR(G) 600V APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG*
*GDenotesRoHSCompliant,PbFreeTerminalFinish.
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * LowForwardVoltageDrop * LowTailCurrent * RBSOAandSCSOARated * HighFreq.Switchingto100KHz * UltraLowLeakageCurrent
G C
(B)
TO -2 47
D3PAK
C G E
(S)
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT50GT60BR_SR(G) UNIT Volts
600 30
@ TC = 25C
110 52 150 150A @ 600V 446 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATICELECTRICALCHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic/TestConditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 1.7 4 2.0 2.2 25
2
5 2.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
A nA
6-2008 052-6273 Rev C
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
TBD 120
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MicrosemiWebsite-http://www.microsemi.com
DYNAMICCHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GT60BR_SR(G)
TestConditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V InductiveSwitching(25C) VCC = 400V VGE = 15V I C = 50A
4 5
MIN
TYP
MAX
UNIT pF V nC
2660 250 153 7.5 240 20 110 150 14 32 240 36 995 1110 1070 14 32 270 95 1035 1655 1505 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55
RG = 4.3 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
InductiveSwitching(125C) VCC = 400V VGE = 15V I C = 50A RG = 4.3 TJ = +125C
Turn-on Switching Energy (Diode)
6
THERMALANDMECHANICALCHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.28 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
052-6273
Rev C
6-2008
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE V
GE
= 15V
200 180 160 140 120 100 80 60 40 20 0
APT50GT60BR_SR(G)
15V 13V 11V 10V
TJ = 25C TJ = -55C TJ = 125C
9V
8V 7V 6V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE1,OutputCharacteristics(TJ =25C) 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 TJ = 25C TJ = 125C VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE2,OutputCharacteristics(TJ =125C) 16 14 12 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE (nC) 250
I = 50A C T = 25C
J
TJ = -55C
VCE = 120V VCE = 300V VCE = 480V
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE3,TransferCharacteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE4,GateCharge 3.5 3.0 2.5 IC = 50A 2.0 1.5 1.0 0.5 0 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
4 IC = 100A 3 IC = 50A 2 IC = 25A
IC = 100A
IC = 25A
1
8 10 12 14 16 VGE,GATE-TO-EMITTERVOLTAGE(V) FIGURE5,OnStateVoltagevsGate-to-EmitterVoltage 1.15
0
6
25 50 75 100 125 TJ,JunctionTemperature(C) FIGURE6,OnStateVoltagevsJunctionTemperature 160
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ,JUNCTIONTEMPERATURE(C) FIGURE7,ThresholdVoltagevs.JunctionTemperature
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC,CASETEMPERATURE(C) FIGURE8,DCCollectorCurrentvsCaseTemperature 0 -50
Lead Temperature Limited
052-6273
Rev C
6-2008
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
350 300 250 200 150 50 VCE = 400V RG = 4.3
APT50GT60BR_SR(G)
20 VGE = 15V
15
VGE =15V,TJ=125C VGE =15V,TJ=25C
10
5 VCE = 400V
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE9,Turn-OnDelayTimevsCollectorCurrent 90 80 70 tr, RISE TIME (ns) tf, FALL TIME (ns) 60 50 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V RG = 4.3, L = 100H, VCE = 400V
0
TJ = 25C, or 125C RG = 4.3 L = 100H
0
20 40 60 80 100 125 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE10,Turn-OffDelayTimevsCollectorCurrent 180 160 140 120 100 80 60 40 20 0
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V RG = 4.3, L = 100H, VCE = 400V
0
L = 100H
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE11,CurrentRiseTimevsCollectorCurrent 5000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE12,CurrentFallTimevsCollectorCurrent 3500 EOFF, TURN OFF ENERGY LOSS (J) 3000 2500 2000 1500 1000 500 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
4000
TJ = 125C
TJ = 125C
3000
2000
1000
TJ = 25C
0 20 40 60 80 100 120 ICE,COLLECTORTOEMITTERCURRENT(A) FIGURE13,Turn-OnEnergyLossvsCollectorCurrent 10,000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
0
0 20 40 60 80 100 120 ICE,COLLECTORTOEMITTERCURRENT(A) FIGURE14,TurnOffEnergyLossvsCollectorCurrent 5,000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 4.3
G
Eon2,100A
Eon2,100A
8,000
4,000
Eoff,100A
6,000
3,000
4,000 Eoff,100A
Eoff,50A Eon2,50A Eoff,25A
2,000
Eon2,50A Eoff,50A Eon2,25A Eoff,25A
6-2008
2,000
1,000
Rev C
052-6273
10 20 30 40 50 RG,GATERESISTANCE(OHMS) FIGURE15,SwitchingEnergyLossesvs.GateResistance
0
Eon2,25A
0
25 50 75 100 125 TJ,JUNCTIONTEMPERATURE(C) FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
0
0
TYPICAL PERFORMANCE CURVES
4,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT50GT60BR_SR(G)
C, CAPACITANCE ( F)
P
1,000
500
Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure17,CapacitancevsCollector-To-EmitterVoltage 100
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure18,MinimimSwitchingSafeOperatingArea
0
0
0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
1.0
TJ (C)
0.114 Dissipated Power (Watts) 0.0057 0.0276
TC (C)
0.113 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE19b,TRANSIENTTHERMALIMPEDANCEMODEL
120 FMAX, OPERATING FREQUENCY (kHz)
50
ZEXT
F
10
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3
G
Pdiss =
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure20,OperatingFrequencyvsCollectorCurrent
10 20
052-6273
2
TJ - TC RJC
Rev C
fmax2 =
Pdiss - Pcond Eon2 + Eoff
6-2008
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
APT50GT60BR_SR(G)
Gate Voltage
APT40DQ60
10% td(on) tr TJ = 125C Collector Current
V CC
IC
V CE
90%
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure21,InductiveSwitchingTestCircuit
Figure22,Turn-onSwitchingWaveformsandDefinitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure23,Turn-offSwitchingWaveformsandDefinitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAKPackageOutline
e3 SAC: Tin, Silver, Copper
Collector (HeatSink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
6-2008
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev C
Gate Collector Emitter
HeatSink(Collector) andLeads arePlated
2.21 (.087) 2.59 (.102)
052-6273
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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