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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB546
DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -5 -2 25 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.5mA; IE=0 IE=-0.5mA; IB=0 IC=-500m A;IB=-50m A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.4A ; VCE=-10V IC=-0.4A ; VCE=-10V 40 5 MIN -150 -200 -5 TYP.
2SB546
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT
MAX
UNIT V V V
-1.0 -50 -50 240 |I |I
V A A
MHz
hFE classifications R 40-80 O 70-140 Y 120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB546
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB546
4


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