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| Preliminary HFB1N70S_Preliminary Dec 2008 BVDSS = 700 V HFB1N70S 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 14 (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 14.0 ID = 0.3 A TO-92 1 3 1.Gate 2. Drain 3. Source D 2 G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25 unless otherwise specified Parameter Value 700 Units V A A A V mJ A mJ V/ns W W/ - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed (Note 1) 0.3 0.18 1.2 30 (Note 2) (Note 1) (Note 1) (Note 3) 33 0.3 0.25 4.5 2.5 0.02 -55 to +150 300 Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by junction temperature Thermal Resistance Characteristics Symbol RJL RJA Junction-to-Lead Junction-to-Ambient Parameter Typ. --Max. 50 140 /W Units SEMIHOW REV.A0,Dec 2008 HFB1N70S_Preliminary Electrical Characteristics TC=25 C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 0.15 A 2.5 --14 4.5 17.5 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 700 ------0.65 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ------175 30 5 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 350 V, ID = 0.8 A, RG = 25 -------- 12 40 20 30 ---- 30 140 60 80 6.0 --- nC nC nC VDS = 560 V, ID = 0.8 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 0.3 A, VGS = 0 V IS = 0.8 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------190 0.53 0.3 1.2 1.4 --A V C Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=96mH, IAS=0.8A, VDD=50V, RG=25, Starting TJ =25C 3. ISD0.3A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Dec 2008 |
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