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| 1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN KLT-255444x Description KLT-255444x is long wavelength distributed feedback(DFB) laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT-255444x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output monitoring. It operates at 1550nm wavelength band and with data rates of 1.25 Gbps. It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional module. FEATURES High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with flat window or ball lens or aspherical lens cap High reliability and environmental endurance Operating wavelength of 1.55 m band Operating temperature range from -20C to 85C Data rates of 1.25Gbps APPLICATIONS SONET OC-24/SDH STM-8 1.25Gbps Gigabit Ethernet Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module Absolute Maximum Ratings Parameter Operating temperature Storage temperature Peak laser forward current Peak laser reverse voltage Peak forward monitor PD current Peak reverse monitor PD voltage Symbol Top Tstg If Vrl Ifp Vrp Min -20 -40 Max 85 100 150 2 2 10 unit o C o C mA V mA V Optical and Electrical Characteristics (Top = 25C otherwise specified) Parameter Threshold current Rated output power Operating current Operating voltage Slope efficiency Center wavelength Side mode suppression ratio Optical rise and fall time Monitor PD current Monitor PD dark current Monitor PD capacitance Symbol Ith Pf Iop Vop c SMSR tr tf Im Id Cm 0.2 1530 30 Min Typ 7 23 5 30 65 1.1 0.25 1550 40 0.1 0.1 0.25 10 Test Conditions CW mA CW, Top = 85C mW CW, kink free at rated P f 40 mA 75 at rated P f, Top = 85C 1.5 V at rated P f mW/mA CW, Po=5mW 1570 nm at rated P f dB at rated P f ns 20 to 80%, I b = Ith 0.3 0.3 ns 80 to 20%, I b = Ith mA at rated P f , Vrp = 5V 0.1 A Vrp = 5V 20 pF Vrp = 5V, 1MHz Max 15 40 Unit 0.05 Note: The engineering spec can be revised without any previous notice. 1/2 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Rev.002 1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN KLT-255444x Outline Drawing for Aaspheric Lens type Pin connections Pin config. pin no. 1 pin no. 2 pin no. 3 pin no. 4 4G case ground/LD anode LD cathode Monitor PD cathode Monitor PD anode 4S Case ground LD cathode Monitor PD anode LD anode/m-PD cathode 4R case ground/LD anode m-PD anode m-PD cathode LD cathode Ordering information KLT Device Type 1 : FP(BH) 2 : DFB Wavelength 31 : 1310 nm 55 : 1550 nm xx:1xx0nm 3nm(CWDM) yB(band):O,E,S,C,L,NI,NC Data Rate Operating Temp. Package type 1 : 1.5 mm ball lens 2 : 2.0mm ball lens 3 : flat window 4 : aspheric lens Pin Config. S : 4S type G : 4G type R : 4R type 3: 3G Kodenshi LD TO 4 : 1.25 Gbps 2 : -20~70 5 : 2.5 Gbps 4 : -20~85 5 : -40~85 3 : CWDM-DFB 49 : 1490 nm 4 : AR LD 2/2 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Rev.002 |
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