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SSM85T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free; RoHS compliant.
D
BV DSS R DS(ON) ID
30V 6m 75A
G S
DESCRIPTION
The SSM85T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM85T03J in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175C for improved thermal margin and reliability.
GD S
TO-252 (H)
G
D
S
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25C ID @ TC=100C IDM PD @ TC=25C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 30 20 75 55 350 107 0.7
3
Units V V A A A W W/C mJ C C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
29 -55 to 175 -55 to 175
THERMAL DATA
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 110 Unit C/W C/W
5/17/2005 Rev.2.3
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SSM85T03GH,J
ELECTRICAL CHARACTERISTICS @ Tj = 25C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.018
Max. Units 6 10 3 1 500 100 52 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
BV DSS/Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA
VGS=10V, ID=45A VGS=4.5V, ID=30A
32 33 7.5 24 11.2 77 35 67 550 380
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=175 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3 , VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
2700 4200
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/s
Min. -
Typ. 28 10
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.VDD=25V , L=100uH , RG=25 , IAS=24A.
5/17/2005 Rev.2.3
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SSM85T03GH,J
300
150
T C =25 o C
250
ID , Drain Current (A)
ID , Drain Current (A)
10V 7.0V 6.0V
o T C = 175 C
10V 7.0V 6.0V
200
100
150
4.5V
100
4.5V V G =4.0V
50
V G =4.0V
50
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
2.0
11
I D =20A T C =25C Normalized R DS(ON)
1.5
I D =20A V G =10V
RDS(ON) (m )
9
7
1.0
5
3 2 4 6 8 10 12
0.5 -50 25 100 175
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
3
30
2.5
20
VGS(th) (V)
T j =175 o C
T j =25 o C
2
Is (A)
1.5
10
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
25
100
175
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of Reverse Diode
5/17/2005 Rev.2.3
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM85T03GH,J
f=1.0MHz
14
10000
I D =30A
12
VGS , Gate to Source Voltage (V)
10
V DS =15V V DS =20V V DS =24V C (pF)
1000
Ciss
8
6
Coss
4
Crss
2
0
100 0 10 20 30 40 50 60 70 1 6 11 16 21 26 31
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
100
Normalized Thermal Response (Rthjc)
1ms ID (A)
0.2
0.1
0.1
10ms
10
0.05
PDM
100ms
t
0.02
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
T c =25 o C Single Pulse
1 0.1 1 10
DC
0.01 Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
5/17/2005 Rev.2.3
Fig 12. Gate Charge Waveform
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SSM85T03GH,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
5/17/2005 Rev.2.3
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