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APTGF100DA120T1G
Boost chopper NPT IGBT Power Module
5 6 11
VCES = 1200V IC = 100A* @ Tc = 80C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
CR1
3 4 Q2 CR2 9 10 1 2 12
Features
NTC
*
* * * Benefits * * * * * *
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 1200 130* 100* 200 20 735 200A @ 1150V Unit V
August, 2007 1-5 APTGF100DA120T1G - Rev 0
A V W
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF100DA120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 5.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A RG = 5.6 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C RG = 5.6 Test Conditions Tj = 25C Tj = 125C Tc = 90C IF = 100A IF = 150A IF = 100A IF = 100A VR = 800V di/dt =200A/s 100 2.4 2.7 1.8 385 480 1055 5240 Min 1200 VR=1200V 100 500 3 V Min Typ 3.2 3.9 5.5 Max 250 3.7 6.5 600 Unit A V V nA
4.5
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Min Typ 6.5 1 0.5 120 50 310 20 130 60 360 30 12 mJ 5 Max Unit nF
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Typ
Max
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
nC
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APTGF100DA120T1G - Rev 0
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trr
Reverse Recovery Time
ns
APTGF100DA120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.19 0.55 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTGF100DA120T1G - Rev 0
August, 2007
APTGF100DA120T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 200 175
TJ=25C TJ = 125C VGE=20V VGE=12V VGE=15V
200 175 150
IC (A)
150 IC (A) 125 100 75
125 100 75 50 25 0 0 1 2 3 VCE (V) 4 5 6
TJ=125C
VGE=9V
50 25 0 0 1 2 3 4 VCE (V) 5 6
200 175 150
Transfert Characteristics 35 30 25 E (mJ)
TJ=125C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 5.6 TJ = 125C
Eon
125 IC (A) 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 40 35 30 E (mJ) 25 20 15 10 5 0 0 10 20 30 40 Gate Resistance (ohms) 50
Eoff VCE = 600V VGE =15V IC = 100A TJ = 125C Eon TJ=25C
20 15 10 5 0 0 25 50 75 100 125 150 175 200 IC (A) Reverse Bias Safe Operating Area 250 200
Eoff
IC (A)
150 100 50 0 0 300 600 900 1200 1500 VCE (V)
VGE=15V TJ=125C RG=5.6
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.9 0.16 0.12 0.08 0.04 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
rectangular Pulse Duration (Seconds)
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4-5
APTGF100DA120T1G - Rev 0
August, 2007
APTGF100DA120T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 200
ZVS VCE=600V D=50% RG=5.6 TJ=125C TC=75C
Forward Characteristic of diode 175 150 125 IF (A) 100 75
TJ=125C
ZCS
hard switching
50 25 0 40 60 80 IC (A) 100 120 140 0 0.5 1 1.5 VF (V) 2
TJ=25C
20
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF100DA120T1G - Rev 0
August, 2007

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